) ....................................................................................................... +1.0V to +3.6V (V
IN
< V
BIAS
)
Bias Voltage (V
BIAS
) .................................................................................................................................. +2.3V to +5.5V
Enable Input Voltage (V
EN
) .............................................................................................................................0V to V
BIAS
Power Good Voltage (V
PGOOD
).......................................................................................................................0V to V
BIAS
Output Voltage Range ............................................................................................................................... +0.4V to +2.0V
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability. Specifications are for packaged product only.
‡ Notice:
The device is not guaranteed to function outside its operating ratings.
Note 1:
The maximum allowable power dissipation of any T
A
(ambient temperature) is P
D(max)
= (T
J(max)
– T
A
) / θ
JA
.
Exceeding the maximum allowable power dissipation will result in excessive die temperature and the regu-
lator will go into thermal shutdown.
2:
Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series
with 100 pF
TABLE 1-1:
ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
V
IN
= V
OUT
+ 0.5V; V
BIAS
= V
OUT
+ 2.1V; C
OUT
= 1 µF; I
OUT
= 100 µA; T
J
= +25°C,
Bold
values indicate –40°C ≤ T
J
≤ +125°C; unless otherwise noted. Specification for packaged product only.
Parameter
Input Supply
Input Voltage Range
V
IN
UVLO Threshold (Note
1)
V
IN
UVLO Hysteresis
Ground Current in Shutdown
IN Bias Current
BIAS Supply
BIAS Input Voltage
V
BIAS
UVLO Threshold
(Note
1)
V
BIAS
UVLO Hysteresis
Dropout Voltage
V
BIAS
Supply Current
V
BIAS
Supply Current in
Shutdown (I
BIAS
)
V
BIAS
BIAS_UVLO
BIAS_UVLO_HYS
Symbol
V
IN
V
IN_UVLO
V
IN_UVLO_HYST
I
GND
I
IN
Min.
1.0
0.7
—
—
—
Typ.
—
0.85
40
0.1
6
Max.
3.6
1.0
—
1.0
15
Units
V
V
mV
µA
µA
Conditions
—
V
IN
Rising
—
V
EN
≤ 0.2V (Regulator
Shutdown)
I
OUT
= 500 mA;V
IN
= V
OUT
+
0.5V
—
V
BIAS
Rising
—
I
OUT
= 100 mA
I
OUT
= 500 mA
I
OUT
= 1 mA;V
BIAS
= V
OUT
+
2.1V
V
EN
≤ 0.2V (Regulator
Shutdown)
2.3
1.7
—
—
—
—
—
—
2.1
75
1.15
1.25
330
0.1
5.5
2.3
—
—
2.1
500
1.0
V
V
mV
V
µA
µA
V
BIAS
- V
OUT
I
BIAS
I
BIAS_SHDN
DS20006050B-page 4
2018 Microchip Technology Inc.
MIC47050
TABLE 1-1:
ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
V
IN
= V
OUT
+ 0.5V; V
BIAS
= V
OUT
+ 2.1V; C
OUT
= 1 µF; I
OUT
= 100 µA; T
J
= +25°C,
Bold
values indicate –40°C ≤ T
J
≤ +125°C; unless otherwise noted. Specification for packaged product only.
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