4
GBU801 - GBU807
Taiwan Semiconductor
8A, 50V - 1000V Glass Passivated Single-Phase Bridge Rectifier
FEATURES
●
●
●
●
●
●
Ideal for printed circuit board
High case dielectric strength of 1500 V
RMS
High surge current capability
Typical I
R
less than 0.1μA
UL Recognized File # E-326243
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
8
50 - 1000
200
150
GBU
Quad
UNIT
A
V
A
°C
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
TV
Monitor
MECHANICAL DATA
● Case: GBU
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Part no. with suffix “H” means AEC-Q101 qualified
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: As marked
● Weight: 4 g (approximately)
GBU
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode)
Rating of fusing ( t<8.3ms)
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
It
T
J
T
STG
1
2
SYMBOL
GBU
801
GBU
801
50
35
50
GBU
802
GBU
802
100
70
100
GBU
803
GBU
803
200
140
200
GBU
804
GBU
804
400
280
400
8
200
166
GBU
805
GBU
805
600
420
600
GBU
806
GBU
806
800
560
800
GBU
807
GBU
807
1000
700
1000
UNIT
V
V
V
A
A
As
°C
°C
2
- 55 to +150
- 55 to +150
Version:K1705
4
GBU801 - GBU807
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
SYMBOL
R
ӨJA
R
ӨJC
LIMIT
21
2
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
=4A, T
J
=25°C
I
F
=8A, T
J
=25°C
(2)
SYMBOL
V
F
TYP
-
-
-
MAX
1.0
1.1
5
500
UNIT
V
V
μA
μA
Reverse current @ rated V
R
per diode
T
J
= 25°C
T
J
=125°C
GBU801
GBU802
GBU803
I
R
-
211
1 MHz, V
R
=4.0V
C
J
94
-
pF
Junction capacitance
GBU804
GBU805
GBU806
GBU807
-
pF
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
H
PACKING
CODE
C2
GBU80x
(Note 1)
D2
X0
Note:
1. "x" defines voltage from 50V (GBU801) to 1000V (GBU807)
*: Optional available
G
GBU
PACKING CODE
SUFFIX(*)
PACKAGE
PACKING
20 / Tube
20 / Tube
Forming
EXAMPLE P/N
EXAMPLE P/N
GBU806HC2G
PART NO.
GBU806
PART NO.
SUFFIX
H
PACKING
CODE
C2
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:K1705
4
GBU801 - GBU807
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
12
AVERAGE FORWARD CURRENT (A)
1000
Fig.2 Typical Junction Capacitance
8
CAPACITANCE (pF)
GBU801 - GBU804
100
GBU805 - GBU807
4
RESISTER OR
INDUCTIVE LOAD
WITH HEATSINK
0
0
20
40
60
80
100
120
140
160
CASE TEMPERATURE (
o
C)
10
0.1
f=1.0MHz
Vsig=50mVp-p
1
10
100
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
1000
100 10
Fig.4 Typical Forward Characteristics
100
1
10
0.1
UF1DLW
T
J
=125°C
T
J
=125
°
C
T
J
=25°C
(A)
Pulse width
10
0.01
1
1
T
J
=25
°
C
0.001
0.1
0.6
0.3
0.4
0.7
0.5
0.8
0.6
0.9
0.7
1
0.8
0.9
1.1
1
1.2
1.1
1.3
1.2
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
3
Version:K1705
4
GBU801 - GBU807
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT (A)
200
180
160
140
120
100
80
60
40
20
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
4
Version:K1705
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