The Si1040X includes a p- and n-Channel MOSFET in a
single SC89-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1040X operates on
supply lines from 1.8 V to 8 V, and can drive loads up to
0.43 A.
5
ON/OFF
Q1
1
R2
SC89-6
Top
View
R2
R1, C1
1
6
Marking Code
ON/OFF
P
WL
Lot Traceability
and Date Code
D2
2
5
D2
3
4
S2
Part
Number
Code
Ordering Information:
Si1040X-T1-GE3 (Lead (Pb)-free and Halogen-free)
TYPICAL APPLICATION CIRCUIT
Si1040X
20
4
V
IN
Q2
R1
6
6
C1
Time (µs)
12
I
L
= 0.36 A
V
ON/OFF
= 3
V
C
i
= 10 µF
C
o
= 1 µF
t
r
t
d(off)
4
t
d(on)
1
R2
R2
GND
0
0
6
8
10
R2 (kΩ)
Note:
For R2 switching
variations with
other
V
IN
/R1
combinations See Typical Characteristics
2
4
2, 3
V
OUT
16
Switching Variation R2 at V
IN
= 2.5 V, R1 = 20 kΩ
t
f
5
ON/OFF
Q1
C
o
LOAD
8
C
i
Document Number: 71809
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
1
Si1040X
Vishay Siliconix
COMPONENTS
R1
R2
C1
Pull-Up Resistor
Optional Slew-Rate Control
Optional Slew-Rate Control
Typical 10 k to 1 m
a
Typical 0 to 100 k
a
Typical 1000 pF
The Si1040X is ideally suited for high-side load switching in
portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Notes:
a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-
on.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Input Voltage
ON/OFF Voltage
Load Current
Continuous Intrinsic Diode Conduction
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500
)
Continuous
a, b
Pulsed
b, c
Symbol
V
IN
V
ON/OFF
I
L
I
S
P
D
T
J
, T
stg
ESD
Limit
8
8
± 0.43
± 1.0
- 0.15
0.174
- 55 to 150
2
W
°C
kV
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Continuous Current)
a
Maximum Junction-to-Foot (Q2)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Symbol
R
thJA
R
thJC
Typical
600
450
Maximum
720
540
Unit
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
ON Characteristics
Input Voltage Range
On-Resistance (P-Channel) at 1 A
V
IN
V
ON/OFF
= 1.5 V, V
IN
= 4.5 V, I
D
= 0.43 A
R
DS(on)
V
ON/OFF
= 1.5 V, V
IN
= 2.5 V, I
D
= 0.36 A
V
ON/OFF
= 1.5 V, V
IN
= 1.8 V, I
D
= 0.3 A
On-State (P-Channel) Drain Current
I
D(on)
V
IN-OUT
0.2
V, V
IN
= 5 V, V
ON/OFF
= 1.5 V
V
IN-OUT
0.3
V, V
IN
= 3 V, V
ON/OFF
= 1.5 V
1
0.8
1.8
0.500
0.710
1.0
8
0.625
0.890
1.25
A
V
I
FL
V
SD
V
IN
= 8 V, V
ON/OFF
= 0 V
I
S
= - 0.15 A
0.85
1
1.2
µA
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Surface mounted on FR4 board.
b. V
IN
= 8 V, V
ON/OFF
= 8 V, T
A
= 25 °C.
c. Pulse test; pulse width
300
µs,
duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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