3. Switching characteristics are independent of operating junction temperatures.
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2
NTR3161N
3.5
I
D
, DRAIN CURRENT (AMPS)
3.0
2.5
2.0
1.5
1.0
0.5
0
0.0
0.5
1.0
1.5
2.0
V
GS
= 1.1 V
V
GS
= 1.3 V
V
GS
= 1.4 V
3.0 V
4.5 V
T
J
= 25°C
V
GS
= 1.2 V
I
D
, DRAIN CURRENT (AMPS)
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.4
0.6
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
0.8
1.0
1.2
1.4
1.6
V
DS
≥
10 V
V
GS
= 1.0 V
V
GS
= 0.9 V
2.5
3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.10
I
D
= 3.3 A
T
J
= 25°C
0.08
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1
2
3
4
5
6
7
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 1.8 V
V
GS
= 2.5 V
0.06
0.04
0.02
1
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
1.6
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.4
1.2
1.0
0.8
0.6
−50
I
D
= 3.3 A
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
10000
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 125°C
−25
0
25
50
75
100
125
150
100
2
4
6
8
10
12
14
16
18
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage
Current versus Voltage
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3
NTR3161N
1000
900
800
C, CAPACITANCE (pF)
700
600
500
400
300
200
100
0
0
C
oss
C
rss
2
4
6
8
10
12
14
16
18
20
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C
iss
V
GS
= 0 V
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
4.5
4.0
Q
T
3.5
3.0
2.5
2.0
Q
GS
Q
GD
V
GS
1.5
1.0
T
J
= 25°C
I
D
= 3.3 A
0
1
2
3
4
5
6
7
8
0.5
0
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total
Charge
4
I
S
, SOURCE CURRENT (AMPS)
1000
V
DD
= 10 V
I
D
= 3.3 A
V
GS
= 4.5 V
t, TIME (ns)
100
V
GS
= 0 V
T
J
= 25°C
3
t
d(off)
t
f
t
r
2
10
t
d(on)
1
1
0
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
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4
NTR3161N
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
SEE VIEW C
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU
−07
AND
−09
OBSOLETE, NEW
STANDARD 318−08.
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
DIM
A
A1
b
c
D
E
e
L
L1
H
E
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
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