NTD4809N, NVD4809N
Power MOSFET
Features
30 V, 58 A, Single N−Channel, DPAK/IPAK
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
AEC Q101 Qualified
−
NVD4809N
These Devices are Pb−Free and are RoHS Compliant
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V
(BR)DSS
30 V
R
DS(on)
MAX
9.0 mW @ 10 V
14 mW @ 4.5 V
D
I
D
MAX
58 A
Applications
•
CPU Power Delivery
•
DC−DC Converters
•
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (R
qJA
) (Note 1)
Power Dissipation
(R
qJA
) (Note 1)
Continuous Drain
Current (R
qJA
) (Note 2)
Power Dissipation
(R
qJA
) (Note 2)
Continuous Drain
Current (R
qJC
)
(Note 1)
Power Dissipation
(R
qJC
) (Note 1)
Pulsed Drain Current
t
p
=10ms
Current Limited by Package
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
, T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
"20
13.1
10.1
2.63
9.6
7.4
1.4
58
45
52
130
45
−55
to
175
43
6.0
91.0
W
A
A
°C
A
V/ns
mJ
4
Drain
YWW
48
09NG
W
A
W
A
1 2
Unit
V
V
A
G
N−Channel
S
4
4
1
4
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
3
CASE 369AD
CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
2 3
1
2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
YWW
48
09NG
4
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 24 V, V
GS
= 10 V,
L = 1.0 mH, I
L(pk)
= 13.5 A, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
2
1 2 3
Drain 3
1
Gate Drain Source
Gate Source
1 2 3
Gate Drain Source
Y
WW
4809N
G
= Year
= Work Week
= Device Code
= Pb−Free Package
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
September, 2011
−
Rev. 13
1
Publication Order Number:
NTD4809N/D
YWW
48
09NG
NTD4809N, NVD4809N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient
−
Steady State (Note 1)
Junction−to−Ambient
−
Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJC−TAB
R
qJA
R
qJA
Value
2.9
3.5
57.1
107.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 to
11.5 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
12.3
21.3
15.1
5.3
7.0
22.7
25.3
2.8
ns
ns
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
1456
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
315
200
11
2.5
4.8
5.0
25
nC
13
nC
pF
gFS
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 15 V, I
D
= 15 A
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
25
1.0
10
"100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
"20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
5.7
7.0
7.0
12
11
9.0
2.5
V
mV/°C
9.0
mW
14
S
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD4809N, NVD4809N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
ta
tb
Q
RR
L
S
L
D
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.95
0.83
19.5
10.7
8.8
9.2
nC
ns
1.2
V
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
2.49
0.0164
1.88
3.46
2.4
nH
W
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3
NTD4809N, NVD4809N
TYPICAL PERFORMANCE CURVES
120
110
I
D
, DRAIN CURRENT (AMPS)
100
90
80
70
60
50
40
30
20
10
0
120
I
D
, DRAIN CURRENT (AMPS)
100
80
60
40
20
0
0
1
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
2
3
4
5
6
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
7V
6.5 V
6V
5.5 V
T
J
= 25°C
5V
V
DS
≥
10 V
4.5 V
4.2 V
4V
3.8 V
3.6 V
3.4 V
3.2 V
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0
3
4
5
6
7
8
9
10
I
D
= 30 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.020
Figure 2. Transfer Characteristics
T
J
= 25°C
0.015
V
GS
= 4.5 V
0.010
V
GS
= 11.5 V
0.005
0
10
15
20
25
30
35
40
45
50
55
60
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.0
I
D
= 30 A
V
GS
= 10 V
1.5
I
DSS
, LEAKAGE (nA)
10,000
100,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 175°C
1000
T
J
= 125°C
100
1.0
0.5
−50 −25
10
0
25
50
75
100
125
150
175
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
NTD4809N, NVD4809N
TYPICAL PERFORMANCE CURVES
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
2500
2000
1500
1000
500
0
10
C
rss
5
V
GS
0
V
DS
5
10
15
20
25
C
rss
12
11
10
9
8
7
6
5
4
3
2
Q
1
Q
2
I
D
= 30 A
0 V < V
GS
< 11.5 V
T
J
= 25°C
V
DS
= 0 V V
GS
= 0 V
C
iss
T
J
= 25°C
Q
T
C, CAPACITANCE (pF)
C
iss
C
oss
1
0
0 1 2 3 4 5 6 7 8 9 1011121314151617181920212223242526
Q
G
, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
30
IS, SOURCE CURRENT (AMPS)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
V
GS
= 0 V
25
20
15
10
5
0
0.5
T
J
= 25°C
t, TIME (ns)
100
t
d(off)
10
t
r
t
d(on)
t
f
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
ID, DRAIN CURRENT (AMPS)
100
10
1
0.1
V
GS
= 20 V
SINGLE PULSE
T
A
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
120
Figure 10. Diode Forward Voltage vs. Current
I
D
= 15 A
100
80
60
40
20
0
25
10
ms
100
ms
1 ms
10 ms
dc
0.01
0.01
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
50
75
150
100
125
T
J
, JUNCTION TEMPERATURE (°C)
175
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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