®
BYW29G-200
HIGH EFFICIENCY FAST RECOVERY DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
trr
V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIMES
HIGH SURGE CURRENT
SMD
A
NC
8A
200 V
35 ns
0.85 V
A
K
K
D
2
PAK
(Plastic)
DESCRIPTION
Single rectifier suited for switchmode power supply
and high frequency DC to DC converters.
Packaged in a surface mount packageD
2
PAK, this
device is intended for use in high frequency in-
verters, free wheeling and polarity protection appli-
cations.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
FRM
Tstg
Tj
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
(All pins connected)
Repetitive peak forward current
Storage and junction temperature range
Tc=120°C
δ
= 0.5
tp=10ms
sinusoidal
tp = 5
µs
f = 5 kHz
Value
200
16
8
80
75
- 40 to + 150
Unit
V
A
A
A
A
°C
October 1999 - Ed: 2
1/5
BYW29G-200
THERMAL RESISTANCE
Symbol
Rth (j-c)
Parameter
Junction to case thermal resistance
Value
2.8
Unit
°
C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
Parameter
Reverse leakage current
Test Conditions
V
R
= V
RRM
T
j
= 25
°
C
T
j
= 100°C
V
F **
Forward voltage drop
I
F
= 5 A
I
F
= 10 A
I
F
= 10 A
Pulse test :
* tp = 5 ms, duty cycle < 2 %
** tp = 380
µs,
duty cycle < 2 %
Min.
Typ.
Max.
10
0.6
0.85
1.05
1.15
Unit
µ
A
mA
V
T
j
= 125°C
T
j
= 125°C
T
j
= 25
°
C
To evaluate the conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.040 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol
t
rr
Parameter
Reverse recovery
time
Test Conditions
T
j
= 25°C
Irr = 0.25 A
T
j
= 25°C
dI
F
/dt = -50A/
µ
s
t
fr
Forward recovery
time
Peak forward
voltage
I
F
= 0.5A
I
R
= 1A
I
F
= 1A
V
R
=
30V
15
V
2
Min.
Typ.
Max.
25
35
ns
Unit
ns
T
j
= 25°C
I
F
= 1A
dI
F
/dt = 100A/µs
V
FR
= 1.1 x V
F
max
T
j
= 25°C
I
F
= 1A
dI
F
/dt = 100A/
µ
s
V
FP
PIN OUT configuration in D
2
PAK:
2/5
BYW29G-200
Fig.1 :
Average forward power dissipation versus
average forward current.
P F(av)(W)
=0.05
=0.1
=0.2
=0.5
=1
Fig.2 :
Peak current versus form factor.
12
10
8
6
160
140
120
100
80
T
IM(A)
T
IM
P=10W
=tp/T
tp
4
2
IF(av)(A)
=tp/T
tp
60
40
P=5W
P=15W
20
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
0
0
1
2
3
4
5
6
7
8
9
10 11
Fig.3 :
Forward voltage drop versus forward cur-
rent (maximum values).
VFM(V)
Fig.4 :
Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
K
Zth(j-c) (tp. )
K =
Rth(j-c)
=0.5
=0.2
= 0 .1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IFM(A)
Tj= 125
o
C
0.5
T
0.2
Single pulse
0.1
1
10
100
0.1
1.0E-03
1.0E-02
tp(s)
1.0E-01
=tp/T
tp
1. 0E+00
Fig.5 :
Non repetitive surge peak forward current
versus overload duration.
IM(A)
Fig.6 :
Average current versus ambient tempera-
ture. (duty cycle : 0.5)
IF(av)(A)
Rth(j-a)=Rth(j-c)
80
70
60
50
40
30
20
10
Tc=25
o
C
IM
t
=0.5
Tc=75
o
C
Tc=120
o
C
t(s)
0.01
0.1
0
0.001
1
10
9
8
7
6
5
4
3
2
1
0
0
Rth(j-a)=15
o
C/W
=0.5
T
=tp/T
tp
Tamb(
o
C)
20
40
60
80
100
120
140
160
3/5
BYW29G-200
Fig.7 :
Junction capacitance versus reverse volt-
age applied (Typical values).
C(pF)
F=1Mhz Tj=25
o
C
Fig.8 :
Recovery charges versus dI
F
/dt.
QRR(nC)
90%CONFIDENCE Tj-10 0
O
C
IF=IF(av)
VR(V)
dIF/dt(A/us)
Fig.9 :
Peak reverse current versus dIF/dt.
Fig.10 :
Dynamic parameters versus junction tem-
perature.
QRR;IRM[Tj]/QRR;IRM[Tj=125
o
C]
I RM(A)
90% CONFIDENCE
Tj-100
O
C
IF=IF(av)
IRM
QRR
dIF/dt(A/us)
Tj(
o
C)
4/5
BYW29G-200
PACKAGE MECHANICAL DATA
D
2
PAK (Plastic)
REF.
A
E
L2
C2
DIMENSIONS
Millimeters
Inches
Min.
Max.
4.60
2.69
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
1.40
1.75
3.20
8°
Min.
0.173
0.098
0.001
0.027
0.045
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
0°
Max.
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
0.409
0.208
0.624
0.055
0.069
0.126
8°
4.40
2.49
0.03
0.70
1.14
0.45
1.23
8.95
10.00
4.88
15.00
1.27
1.40
2.40
0°
A
A1
A2
D
L
L3
A1
B2
B
G
A2
C
R
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
M
*
V2
* FLAT ZONE NO LESSTHAN 2mm
0.40 typ.
0.016 typ.
FOOT PRINT
(in millimeters)
16.90
10.30
1.30
5.08
3.70
8.90
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of thirdparties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
©
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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