HITFET
Ò
II.Generation BTS 134 D
Smart Lowside Power Switch
Features
·
Logic Level Input
·
Input Protection (ESD)
·
Thermal shutdown with
auto restart
·
Overload protection
·
Short circuit protection
·
Overvoltage protection
·
Current limitation
·
Analog driving possible
P-TO252-3-11
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
V
DS
R
DS(on)
I
D(Nom)
E
AS
42
50
3.5
3
V
mW
A
J
Application
·
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
·
µC compatible power switch for 12 V DC applications
·
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
Ò
technology. Fully protected by embedded
protection functions.
V
bb
M
HITFET
â
Current
Limitation
In
Pin 1
Drain
Overvoltage-
Protection
Pin 2 and 4 (TAB)
Gate-Driving
Unit
Over-
temperature
Protection
ESD
Overload
Protection
Short circuit
Protection
Pin 3
Source
Complete product spectrum and additional information http://www.infineon.com/hitfet
Page 1
2004-03-05
BTS 134 D
Maximum Ratings at T
j
= 25°C, unless otherwise specified
Parameter
Drain source voltage
Supply voltage for full short circuit protection
Continuous input voltage
1)
Continuous input current
2)
-0.2V
£
V
IN
£
10V
V
IN
< -0.2V or
V
IN
> 10V
Operating temperature
Storage temperature
Power dissipation
5)
T
C
= 85 °C
6cm
2
cooling area ,
T
A
= 85 °C
Unclamped single pulse inductive energy
2)
Load dump protection
V
LoadDump2)3)
=
V
A
+
V
S
V
IN
= 0 and 10 V, t
d
= 400 ms,
R
I
= 2
W,
R
L
= 4.5
W,
V
A
= 13.5 V
Electrostatic discharge
voltage
2)
(Human Body Model)
V
ESD
according to
Jedec norm
EIA/JESD22-A114-B, Section 4
Jedec humidity
category,J-STD-20-B
IEC climatic category; DIN
EN 60068-1
Thermal resistance
junction - case:
SMD: junction - ambient
@ min. footprint
@ 6 cm
2
cooling area
4)
1For input voltages beyond these limits I has to be limited.
IN
2not subject to production test, specified by design
3
V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
5not subject to production test, calculated by R
thJA and Rds(on)
Page 2
Symbol
V
DS
V
bb(SC)
V
IN
I
IN
Value
42
42
-0.2
2)
... +10
Unit
V
mA
self limited
|
I
IN
|
£
2
T
j
T
stg
P
tot
-40 ...+150
-55 ... +150
°C
W
43
1.1
E
AS
V
LD
3
65
J
V
2
kV
MSL1
40/150/56
R
thJC
R
thJA
1.5
115
55
K/W
2004-03-05
BTS 134 D
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150,
I
D
= 10 mA
Off-state drain current
T
j
= -40...+85 °C,
V
DS
= 32 V ,
V
IN
= 0 V
T
j
= 150 °C
Input threshold voltage
I
D
=
1.4
mA,
T
j
= 25 °C
I
D
=
1.4
mA,
T
j
= 150 °C
On state input current
On-state resistance
V
IN
= 5 V,
I
D
= 3 A,
T
j
= 25 °C
V
IN
= 5 V,
I
D
= 3 A,
T
j
= 150 °C
On-state resistance
V
IN
= 10 V,
I
D
= 3 A,
T
j
= 25 °C
V
IN
= 10 V,
I
D
= 3 A,
T
j
= 150 °C
Nominal load current
5)
T
j
< 150°C,
V
IN
= 10 V,
T
A
= 85 °C, SMD
1)
Nominal load current
5)
V
IN
= 10 V,
V
DS
= 0.5 V,
T
C
= 85 °C,
T
j
< 150°C
Current limit (active if
V
DS
>2.5 V)
2)
V
IN
= 10 V,
V
DS
= 12 V,
t
m
= 200 µs
I
D(lim)
18
24
30
I
D(ISO)
7.1
10
-
I
D(Nom)
R
DS(on)
-
-
3.5
35
65
4.6
50
90
-
A
I
IN(on)
R
DS(on)
-
-
45
75
60
100
V
IN(th)
1.3
0.8
-
1.7
-
10
2.2
-
30
µA
mW
I
DSS
-
-
1.5
5
8
15
V
µA
V
DS(AZ)
42
-
55
V
Symbol
min.
Values
typ.
max.
Unit
1@ 6 cm2 cooling area
2Device switched on into existing short circuit (see diagram Determination of I
D(lim) ). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5not subject to production test, calculated by R
thJA and Rds(on)
Page 3
2004-03-05
BTS 134 D
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Dynamic Characteristics
Turn-on time
V
IN
to 90%
I
D
:
t
on
t
off
-dV
DS
/dt
on
dV
DS
/dt
off
-
-
-
-
60
60
0.3
0.7
100
100
1.5
1.5
V/µs
µs
R
L
= 4.7
W,
V
IN
= 0 to 10 V,
V
bb
= 12 V
Turn-off time
V
IN
to 10%
I
D
:
R
L
= 4.7
W,
V
IN
= 10 to 0 V,
V
bb
= 12 V
Slew rate on
70 to 50%
V
bb
:
R
L
= 4.7
W,
V
IN
= 0 to 10 V,
V
bb
= 12 V
Slew rate off
50 to 70%
V
bb
:
R
L
= 4.7
W,
V
IN
= 10 to 0 V,
V
bb
= 12 V
Protection Functions
1)
Thermal overload trip temperature
Thermal hysteresis
2)
Input current protection mode
T
j
= 150 °C
Unclamped single pulse inductive energy
2)
I
D
= 3 A,
T
j
= 25 °C,
V
bb
= 12 V
E
AS
3
-
-
J
T
jt
DT
jt
I
IN(Prot)
150
-
-
175
10
130
-
-
300
°C
K
µA
Symbol
min.
Values
typ.
max.
Unit
Inverse Diode
Inverse diode forward voltage
I
F
= 15 A,
t
m
= 250 µs,
V
IN
= 0 V,
t
P
= 300 µs
V
SD
-
1.0
1.5
V
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
Page 4
2004-03-05
BTS 134 D
Block diagram
Terms
Inductive and overvoltage
output clamp
RL
V
I IN
1
IN
HITFET
S
3
D
2
ID
VDS
Vbb
Z
D
S
HITFET
VIN
Input circuit (ESD protection)
Short circuit behaviour
Gate Drive
Input
V
IN
Source/
Ground
I
IN
I
D
S
T
j
Page 5
2004-03-05
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