Surface Mount Microwave
Schottky Detector Diodes
Technical Data
HSMS-286x Series
Features
• Surface Mount SOT-23/
SOT-143 Packages
• Miniature SOT-323 and
SOT-363 Packages
• High Detection Sensitivity:
up to 50 mV/µW at 915 MHz
up to 35 mV/µW at 2.45 GHz
up to 25 mV/µW at 5.80 GHz
• Low FIT (Failure in Time)
Rate*
• Tape and Reel Options
Available
• Unique Configurations in
Surface Mount SOT-363
Package
– increase flexibility
– save board space
– reduce cost
• HSMS-286K Grounded
Center Leads Provide up to
10 dB Higher Isolation
• Matched Diodes for
Consistent Performance
• Better Thermal
Conductivity for Higher
Power Dissipation
• Lead-free Option Available
* For more information see the Surface
Mount Schottky Reliability Data Sheet.
SOT-23/SOT-143 Package
Lead Code Identification
(top view)
SINGLE
3
SERIES
3
Description
Agilent’s HSMS-286x family of DC
biased detector diodes have been
designed and optimized for use
from 915 MHz to 5.8 GHz. They
are ideal for RF/ID and RF Tag
applications as well as large
signal detection, modulation, RF
to DC conversion or voltage
doubling.
Available in various package
configurations, this family of
detector diodes provides low cost
solutions to a wide variety of
design problems. Agilent’s
manufacturing techniques assure
that when two or more diodes are
mounted into a single surface
mount package, they are taken
from adjacent sites on the wafer,
assuring the highest possible
degree of match.
1
#0
2
1
#2
2
COMMON
ANODE
3
COMMON
CATHODE
3
1
#3
2
1
#4
2
UNCONNECTED
PAIR
3
4
1
#5
2
SOT-323 Package Lead
Code Identification
(top view)
SINGLE
3
SERIES
3
1
B
2
1
C
2
COMMON
ANODE
3
COMMON
CATHODE
3
1
E
2
1
F
2
2
SOT-363 Package Lead
Code Identification
(top view)
HIGH ISOLATION
UNCONNECTED PAIR
6
5
4
Pin Connections and
Package Marking
1
2
3
6
5
4
UNCONNECTED
TRIO
6
5
4
PLx
1
2
3
K
BRIDGE
QUAD
6
5
4
1
2
L
3
6
RING
QUAD
5
4
1
2
P
3
1
2
R
3
Notes:
1. Package marking provides orienta-
tion and identification.
2. The first two characters are the
package marking code. The third
character is the date code.
SOT-23/SOT-143 DC Electrical Specifications, T
C
= +25
°
C, Single Diode
Part
Number
HSMS-
2860
2862
2863
2864
2865
Test Conditions
Notes:
1. Package marking code is in white.
2.
∆V
F
for diodes in pairs is 15.0 mV maximum at 1.0 mA.
3.
∆C
T
for diodes in pairs is 0.05 pF maximum at –0.5 V.
Package
Marking
Code
[1]
T0
T2
T3
T4
T5
Lead
Code
0
2
3
4
5
Configuration
Single
Series Pair
[2,3]
Common Anode
[2,3]
Common Cathode
[2,3]
Unconnected Pair
[2,3]
Forward Voltage
V
F
(mV)
250 Min.
350 Max.
Typical
Capacitance
C
T
(pF)
0.30
I
F
= 1.0 mA
V
R
= 0 V, f = 1 MHz
SOT-323/SOT-363 DC Electrical Specifications, T
C
= +25
°
C, Single Diode
Part
Number
HSMS-
286B
286C
286E
286F
286K
286L
286P
286R
Test Conditions
Notes:
1. Package marking code is laser marked.
2.
∆V
F
for diodes in trios and quads is 15.0 mV maximum at 1.0 mA.
3.
∆C
T
for diodes in trios and quads is 0.05 pF maximum at –0.5V.
Package
Marking
Code
[1]
T0
T2
T3
T4
TK
TL
TP
ZZ
Lead
Code
B
C
E
F
K
L
P
R
Configuration
Single
Series Pair
[2,3]
Common Anode
[2,3]
Common Cathode
[2,3]
High Isolation
Unconnected Pair
Unconnected Trio
Bridge Quad
Ring Quad
Forward Voltage
V
F
(mV)
250 Min.
350 Max.
Typical
Capacitance
C
T
(pF)
0.25
I
F
= 1.0 mA
V
R
= 0 V, f = 1 MHz
3
RF Electrical Specifications, T
C
= +25
°
C, Single Diode
Part
Number
HSMS-
2860
2862
2863
2864
2865
286B
286C
286E
286F
286K
286L
286P
286R
Test
Conditions
Typical Tangential Sensitivity
TSS (dBm) @ f =
915 MHz 2.45 GHz
5.8 GHz
– 57
– 56
– 55
Typical Voltage Sensitivity
γ
(mV/
µ
W) @ f =
915 MHz 2.45 GHz
5.8 GHz
50
35
25
Typical Video
Resistance
RV (K
Ω
)
5.0
Video Bandwidth = 2 MHz
I
b
= 5
µA
Power in = – 40 dBm
R
L
= 100 KΩ, I
b
= 5
µA
I
b
= 5
µA
Absolute Maximum Ratings, T
C
= +25
°
C, Single Diode
Symbol
P
IV
T
J
T
STG
T
OP
θ
jc
Parameter
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Operating Temperature
Thermal Resistance
[2]
Unit
V
°C
°C
°C
°C/W
Absolute Maximum
[1]
SOT-23/143 SOT-323/363
4.0
150
-65 to 150
-65 to 150
500
4.0
150
-65 to 150
-65 to 150
150
ESD WARNING:
Handling Precautions
Should Be Taken To Avoid
Static Discharge.
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package
pins where contact is made to the circuit board.
4
Equivalent Linear Circuit Model,
Diode chip
R
j
R
S
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
Units
V
pF
eV
A
A
Ω
V
Value
7.0
0.18
0.69
1 E-5
5 E -8
1.08
6.0
0.65
2
0.5
C
j
N
R
S
P
B
(VJ)
P
T
(XTI)
M
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T = temperature,
°K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-286x product,
please refer to Application Note AN1124.
5
Typical Parameters, Single Diode
FORWARD VOLTAGE DIFFERENCE (mV)
100
FORWARD CURRENT (mA)
FORWARD CURRENT (µA)
100
I
F
(left scale)
10
10000
R
L
= 100 KΩ
1000
VOLTAGE OUT (mV)
10
T
A
= –55°C
T
A
= +25°C
T
A
= +85°C
2.45 GHz
100
915 MHz
1
10
10
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
.1
∆V
F
(right scale)
1
.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
FORWARD VOLTAGE (V)
1
0.05
0.10
0.15
0.20
1
0.25
0.1
-50
-40
-30
-20
-10
0
FORWARD VOLTAGE (V)
POWER IN (dBm)
Figure 1. Forward Current vs.
Forward Voltage at Temperature.
Figure 2. Forward Voltage Match.
Figure 3. +25°C Output Voltage vs.
Input Power, 3
µA
Bias.
30
R
L
= 100 KΩ
915 MHz
10,000
20
µA
1000
5
µA
100
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
10
R
L
= 100 KΩ
OUTPUT VOLTAGE (mV)
VOLTAGE OUT (mV)
40
10
µA
35
30
25
20
15
10
Input Power =
–30 dBm @ 2.45 GHz
Data taken in fixed-tuned
FR4 circuit
R
L
= 100 KΩ
.1
1
10
100
BIAS CURRENT (µA)
VOLTAGE OUT (mV)
10
2.45 GHz
5.8 GHz
1
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
0.3
-50
-40
POWER IN (dBm)
-30
1
–40
–30
–20
–10
0
10
5
POWER IN (dBm)
Figure 4. +25°C Expanded Output
Voltage vs. Input Power. See Figure 3.
Figure 5. Dynamic Transfer
Characteristic as a Function of DC Bias.
Figure 6. Voltage Sensitivity as a
Function of DC Bias Current.
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