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RN2906: 产品描述TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process); 产品类别分立半导体晶体管; 文件大小266KB，共7页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/; 标准

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RN2906概述

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2906规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	符合
包装说明	SMALL OUTLINE, R-PDSO-G6
针数	6
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	BUILT-IN RESISTOR RATIO IS 10
最大集电极电流 (IC)	0.1 A
基于收集器的最大容量	6 pF
集电极-发射极最大电压	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80
JESD-30 代码	R-PDSO-G6
元件数量	2
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	PNP
最大功率耗散 (Abs)	0.2 W
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	200 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

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RN2901~RN2906

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2901,RN2902,RN2903,RN2904,RN2905,RN2906

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Including two devices in US6 (ultra super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1901~RN1906

Unit in mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2901

RN2902

RN2903

RN2904

RN2905

RN2906

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

EIAJ

TOSHIBA

Weight: 6.8mg

―

2-2J1A

Equivalent Circuit

(Top View)

Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2901~2906

RN2901~2904

RN2905, 2906

Symbol

CBO

CEO

EBO

stg

Rating

−50

−10

−5

−100

200

150

−55~150

Unit

°C

: Total rating

2001-06-05

RN2906相似产品对比

	RN2906	RN2902	RN2901	RN2904	RN2903	RN2905
描述	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	符合	符合	符合	符合	符合	符合
包装说明	SMALL OUTLINE, R-PDSO-G6	2-2J1A, 6 PIN	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	2-2J1A, 6 PIN
针数	6	6	6	6	6	6
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	BUILT-IN RESISTOR RATIO IS 10	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 21.36
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
基于收集器的最大容量	6 pF	6 pF	6 pF	6 pF	6 pF	6 pF
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80	50	30	80	70	80
JESD-30 代码	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
元件数量	2	2	2	2	2	2
端子数量	6	6	6	6	6	6
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP
最大功率耗散 (Abs)	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
VCEsat-Max	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V
Base Number Matches	1	-	1	1	1	-

RN2906

RN2906概述

RN2906规格参数

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