IRF9910PbF-1
V
DS
R
DS(on) m ax
Q1
(@V
GS
= 10V)
R
DS(on) m ax
Q2
(@V
GS
= 10V)
Q
g (typical)
Q1
Q
g (typical)
Q2
I
D(@TA = 25°C)
Q1
I
D(@TA = 25°C)
Q2
20
13.4
m
Ω
9.3
7.4
15
10
A
12
nC
V
S2
G2
S1
G1
1
2
3
4
HEXFET
®
Power MOSFET
8
7
6
5
D2
D2
D1
D1
SO-8
Applications
l
Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles
and set-top box
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable Part Number
IRF9910PbF-1
IRF9910TRPbF-1
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
IRF9910PbF-1
Package Type
SO-8
⇒
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
10
8.3
83
2.0
1.3
0.016
-55 to + 150
W/°C
°C
Q1 Max.
20
± 20
Q2 Max.
Units
V
12
9.9
98
W
A
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
fg
Notes
through
are on page 10
1
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November 22, 2013
IRF9910PbF-1
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Q1&Q2
Q1
Q2
Q1
Q2
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
20
–––
–––
–––
–––
–––
–––
1.65
–––
–––
–––
–––
–––
–––
19
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.0061
0.014
10.7
14.6
7.4
9.1
–––
-4.9
-5.0
–––
–––
–––
–––
–––
–––
7.4
15
2.6
4.3
0.85
1.4
2.5
5.4
1.5
3.9
3.4
6.8
4.0
8.7
6.3
8.3
10
14
9.2
15
4.5
7.5
900
1860
290
600
140
310
Max.
–––
–––
–––
13.4
18.3
9.3
11.3
2.55
–––
–––
1.0
100
100
-100
–––
–––
11
23
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Min.
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
11
16
3.1
4.9
Max.
2.5
83
98
1.0
1.0
17
24
4.7
7.3
Units
A
A
V
ns
nC
Units
V
V/°C
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 8.3A
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 9.8A
V
DS
= V
GS
, I
D
= 250μA
R
DS(on)
Static Drain-to-Source On-Resistance
mΩ
e
e
e
e
V
mV/°C
μA
nA
S
V
DS
= 16V, V
GS
V
DS
= 16V, V
GS
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
=
V
DS
= 10V, I
D
=
= 0V
= 0V, T
J
= 125°C
8.3A
9.8A
nC
Q1
V
DS
= 10V
V
GS
= 4.5V, I
D
= 8.3A
Q2
V
DS
= 10V
V
GS
= 4.5V, I
D
= 9.8A
nC
V
DS
= 10V, V
GS
= 0V
Q1
V
DD
= 16V, V
GS
= 4.5V
I
D
= 8.3A
ns
Q2
V
DD
= 16V, V
GS
= 4.5V
I
D
= 9.8A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
pF
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
E
AS
Avalanche Current
I
AR
Diode Characteristics
Parameter
d
Q1 Max.
33
8.3
Q2 Max.
26
9.8
Conditions
Units
mJ
A
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Ã
Reverse Recovery Time
Reverse Recovery Charge
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 8.3A, V
GS
= 0V
T
J
= 25°C, I
S
= 9.8A, V
GS
= 0V
Q1 T
J
= 25°C, I
F
= 8.3A,
V
DD
= 10V, di/dt = 100A/μs
Q2 T
J
= 25°C, I
F
= 9.8A,
V
DD
= 10V, di/dt = 100A/μs
D
e
e
e
e
S
2
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2013 International Rectifier
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November 22, 2013
IRF9910PbF-1
Typical Characteristics
Q1 - Control FET
10000
Q2 - Synchronous FET
10000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1000
100
10
1
0.1
2.5V
BOTTOM
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
TOP
1000
100
10
1
2.5V
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
≤
60μs PULSE WIDTH
Tj = 25°C
0.1
0.01
0.1
1
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤
60μs PULSE WIDTH
Tj = 25°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
10000
Fig 2.
Typical Output Characteristics
10000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1000
BOTTOM
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
TOP
1000
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
1
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
2.5V
≤
60μs PULSE WIDTH
Tj = 150°C
100
10
2.5V
1
≤
60μs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
100
ID, Drain-to-Source Current
(Α)
T = 150°C
J
10
ID, Drain-to-Source Current
(Α)
100
10
T = 25°C
J
1
T = 25°C
J
1
T = 150°C
J
V
= 10V
DS
≤
60μs PULSE WIDTH
0.1
2
3
4
5
6
V
= 10V
DS
≤
60μs PULSE WIDTH
0.1
1
2
3
4
5
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
3
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VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
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November 22, 2013
IRF9910PbF-1
Typical Characteristics
Q1 - Control FET
10000
VGS = 0V,
C
iss
rss
oss
=C
=C
=C
gs
f = 1 MHZ
+ C
gd
, C
ds
SHORTED
Q2 - Synchronous FET
100000
VGS = 0V,
f = 1 MHZ
C
=C
+ C , C
SHORTED
iss
gs
gd
ds
C
rss
oss
=C
=C
gd
ds
+C
gd
C, Capacitance(pF)
gd
ds
+C
gd
C, Capacitance(pF)
C
C
10000
C
1000
C
iss
C
iss
C
oss
1000
C
oss
C
rss
C
rss
100
1
10
100
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Capacitance Vs.Drain-to-Source Voltage
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 8.
Typical Capacitance Vs.Drain-to-Source Voltage
VGS, Gate-to-Source Voltage (V)
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
5
10
15
20
I = 9.8A
D
V = 16V
DS
V = 10V
DS
6.0
I = 8.3A
D
5.0
4.0
3.0
2.0
1.0
0.0
V = 16V
DS
V = 10V
DS
0 1 2 3 4 5 6 7 8 9 10
QG Total Gate Charge (nC)
Fig. 9.
Gate-to-Source Voltage vs Typical Gate Charge
QG Total Gate Charge (nC)
Fig. 10.
Gate-to-Source Voltage vs Typical Gate Charge
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
1000
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
100
10
1
0.1
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 11.
Maximum Safe Operating Area
100
10
1
0.1
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 12.
Maximum Safe Operating Area
100μsec
1msec
10msec
T = 25°C
A
Tj = 150°C
Single Pulse
100μsec
1msec
10msec
T = 25°C
A
Tj = 150°C
Single Pulse
4
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November 22, 2013
IRF9910PbF-1
Typical Characteristics
Q1 - Control FET
I
= 10A
D
V
= 10V
GS
Q2 - Synchronous FET
R DS(on) , Drain-to-Source On Resistance
R DS(on) , Drain-to-Source On Resistance
1.5
1.5
I
= 12A
D
V
= 10V
GS
(Normalized)
1.0
(Normalized)
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160
TJ , Junction Temperature (°C)
0.5
-60 -40 -20 0 20 40 60 80 100120140160
TJ , Junction Temperature (°C)
Fig 13.
Normalized On-Resistance
vs. Temperature
100
ISD, Reverse Drain Current (A)
Fig 14.
Normalized On-Resistance
vs. Temperature
100
ISD, Reverse Drain Current (A)
T = 150°C
J
T = 150°C
J
10
10
T = 25°C
J
T = 25°C
J
1
1
V
= 0V
GS
V
= 0V
GS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 15.
Typical Source-Drain Diode Forward Voltage
Fig 16.
Typical Source-Drain Diode Forward Voltage
, Drain-to -Source On Resistance (m)
Ω
DS(on)
R DS(on), Drain-to -Source On Resistance (m)
Ω
40
35
30
25
20
15
10
5
0
2
3
4
5
6
7
8
9
10
TJ = 25°C
T = 125°C
J
I = 10A
D
25
ID = 12A
20
15
T = 125°C
J
10
T = 25°C
J
5
R
0
2
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
Fig 17.
Typical On-Resistance vs. Gate Voltage
5
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2013 International Rectifier
Fig 18.
Typical On-Resistance vs. Gate Voltage
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November 22, 2013
VGS, Gate -to -Source Voltage (V)
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