TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
•
Glass Passivated Die
•
Rugged Construction
Qualified per MIL-PRF-19500/211
•
Glass to Metal Header Construction
•
High Surge Current Capability
DEVICES
LEVELS
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Peak Repetitive Reverse Voltage
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
Symbol
Value
200
400
600
800
1000
200
300
6250
0.20
0.80
-65°C to 200°C
-65°C to 200°C
Unit
V
RWM
V
Average Forward Current, T
C
= 150°
Average Forward Current, T
C
= 120°
Peak Surge Forward Current @ t
p
= 8.3ms, half sinewave,
T
C
= 200°C
Thermal Resistance, Junction to Case
Typical Thermal Resistance
Operating Case Temperature Range
Storage Temperature Range
I
F
I
F
I
FSM
R
θJC
R
θCS
T
j
T
STG
A
A
A
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
Forward Voltage
I
FM
= 940A, T
C
= 25°C
Reverse Current
V
RM
= 200, T
C
= 25°C
V
RM
= 400, T
C
= 25°C
V
RM
= 600, T
C
= 25°C
V
RM
= 800, T
C
= 25°C
V
RM
= 1000, T
C
= 25°C
Reverse Current
V
RM
= 200, T
C
= 175°C
V
RM
= 400, T
C
= 175°C
V
RM
= 600, T
C
= 175°C
V
RM
= 800, T
C
= 175°C
V
RM
= 1000, T
C
= 175°C
Note:
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
Symbol
V
FM
Min.
Max.
1.55
Unit
V
DO-205AB (DO-9)
I
RM
10
mA
I
RM
30
mA
T4-LDS-0140 Rev. 1 (091750)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
GRAPHS
FIGURE 1
TYPICAL FORWARD CHARACTERISTICS
FIGURE 3
FORWARD CURRENT DERATING
FIGURE 5
MAXIMUM NONREPETITIVE
MULTI-CYCLE SURGE CURRENT
FIGURE 2
TYPICAL REVERSE CHARACTERISTICS
T4-LDS-0140 Rev. 1 (091750)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
PACKAGE DIMENSIONS
NOTES:
Symbol
1.
2.
3.
Metric equivalents are given for general information only.
Complete threads to extend to within 2.5 threads of seating
plane.
.750-16 UNF-2A. Maximum pitch diameter of plated
threads shall be basic pitch diameter. .7094 (18.019 mm)
ref. (Screw Thread Standards for Federal Services) FED-
STD-H28.
Angular orientation of terminal and tabulation with respect
to hex base is undefined. Square or radius on end of
terminal is undefined.
A chamfer (or undercut) on one or both ends of hexagonal
portions is optional.
Tabulation optional.
Minimum flat.
Flexible leads.
A
B
C
φD
φD1
E
F
H
I1
φM
M1
N
Q
Q1
φt
W
4.
5.
6.
7.
8.
Dimensions
Inches
Millimeters
Min
Max
Min
Max
1.520
38.10
.530
.755
13.46
19.18
.063
.172
1.60
4.37
1.100
27.94
.600
15.24
1.218
1.252
30.94
31.75
.250
.562
6.35
14.27
5.125
6.750
130.18 171.45
.375
9.53
.660
.745
16.76
18.92
.125
3.18
.793
.828
20.14
21.03
2.300
57.15
.375
9.53
.265
.350
6.73
3.89
Notes
4
5
7
2
6
6
3
Physical dimensions for semiconductor devices
T4-LDS-0140 Rev. 1 (091750)
Page 3 of 3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
