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HSMS-8101-TR1G

产品描述SILICON, KU BAND, MIXER DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-3
产品类别分立半导体    二极管   
文件大小178KB,共6页
制造商AVAGO
官网地址http://www.avagotech.com/
标准
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HSMS-8101-TR1G概述

SILICON, KU BAND, MIXER DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-3

HSMS-8101-TR1G规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明R-PDSO-G3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
配置SINGLE
最大二极管电容0.26 pF
二极管元件材料SILICON
二极管类型MIXER DIODE
频带KU BAND
JESD-30 代码R-PDSO-G3
JESD-609代码e4
湿度敏感等级1
元件数量1
端子数量3
最大工作频率14 GHz
最小工作频率10 GHz
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
认证状态Not Qualified
表面贴装YES
技术SCHOTTKY
端子面层Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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HSMS-8101, 8202, 8207, 8209
Data Sheet
Surface Mount Microwave Schottky Mixer Diodes
Description/Applications
These low cost microwave Schottky diodes are specifically
designed for use at X/Ku‑bands and are ideal for DBS and
VSAT downconverter applications. They are available in
SOT‑23 and SOT‑143 standard package configurations.
Note that Avago's manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent
sites on the wafer, assuring the highest degree of
match.
Features
Optimized for use at 10‑14 GHz
Low Capacitance
Low Conversion Loss
Low RD
Low Cost Surface Mount Plastic Package
Lead‑free
Plastic SOT-23 Package
Package Lead Code Identification
(Top View)
SINGLE
3
SERIES
3
1
Plastic SOT-143 Package
3
#1
RING
QUAD
2
1
#2
2
4
CROSS-OVER
QUAD
3
4
1
#7
2
1
#9
2
Absolute Maximum Ratings
[1]
, T
A
= +25°C
Symbol
P
T
P
IV
T
J
T
STG
, T
op
Parameter
Total Device Dissipation
[2]
Peak Inverse Voltage
Junction Temperature
Storage and Operating
Temperature
Unit
mW
V
°C
°C
Min.
‑65
Max.
75
4
+150
+150
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. Measured in an infinite heat sink at T
CASE
= 25°C. Derate linearly to
zero at 150°C per diode.

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