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CY7C245A-35JCT

产品描述OTP ROM, 2KX8, 25ns, CMOS, PQCC28, PLASTIC, LCC-28
产品类别存储    存储   
文件大小242KB,共11页
制造商Cypress(赛普拉斯)
下载文档 详细参数 选型对比 全文预览

CY7C245A-35JCT概述

OTP ROM, 2KX8, 25ns, CMOS, PQCC28, PLASTIC, LCC-28

CY7C245A-35JCT规格参数

参数名称属性值
零件包装代码QLCC
包装说明QCCJ,
针数28
Reach Compliance Codeunknown
ECCN代码EAR99
最长访问时间25 ns
其他特性PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS
JESD-30 代码S-PQCC-J28
长度11.5316 mm
内存密度16384 bit
内存集成电路类型OTP ROM
内存宽度8
功能数量1
端子数量28
字数2048 words
字数代码2000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织2KX8
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码QCCJ
封装形状SQUARE
封装形式CHIP CARRIER
并行/串行PARALLEL
认证状态Not Qualified
座面最大高度4.572 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式J BEND
端子节距1.27 mm
端子位置QUAD
宽度11.5316 mm
Base Number Matches1

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1CY7C245A
CY7C245A
2K x 8 Reprogrammable Registered PROM
Features
• Windowed for reprogrammability
• CMOS for optimum speed/power
• High speed
— 15-ns address set-up
— 10-ns clock to output
• Low power
— 330 mW (commercial) for -25 ns
— 660 mW (military)
Programmable synchronous or asynchronous output
enable
On-chip edge-triggered registers
Programmable asynchronous register (INIT)
EPROM technology, 100% programmable
Slim, 300-mil, 24-pin plastic or hermetic DIP
5V
±10%
V
CC
, commercial and military
TTL-compatible I/O
Direct replacement for bipolar PROMs
Capable of withstanding greater than 2001V static
discharge
Functional Description
The CY7C245A is a high-performance, 2K x 8, electrically
programmable, read only memory packaged in a slim 300-mil
plastic or hermetic DIP. The ceramic package may be
equipped with an erasure window; when exposed to UV light
the PROM is erased and can then be reprogrammed. The
memory cells utilize proven EPROM floating-gate technology
and byte-wide intelligent programming algorithms.
The CY7C245A replaces bipolar devices and offers the advan-
tages of lower power, reprogrammability, superior perfor-
mance and high programming yield. The EPROM cell requires
only 12.5V for the supervoltage, and low current requirements
allow gang programming. The EPROM cells allow each
memory location to be tested 100%, because each location is
written into, erased, and repeatedly exercised prior to encap-
sulation. Each PROM is also tested for AC performance to
guarantee that after customer programming the product will
meet AC specification limits.
The CY7C245A has an asynchronous initialize function (INIT).
This function acts as a 2049th 8-bit word loaded into the
on-chip register. It is user programmable with any desired
word, or may be used as a PRESET or CLEAR function on the
outputs. INIT is triggered by a low level, not an edge.
Logic Block Diagram
INIT
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
CP
COLUMN
ADDRESS
ADDRESS
DECODER
PROGRAMMABLE
INITIALIZE WORD
ROW
ADDRESS
PROGRAMMABLE
ARRAY
MULTIPLEXER
O
7
O
6
O
5
8-BIT
EDGE-
TRIGGERED
REGISTER
O
4
O
3
O
2
O
1
O
0
PinConfigurations
DIP
Top View
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
A
8
A
9
A
10
INIT
E/E
S
CP
O
7
O
6
O
5
O
4
O
3
E/E
S
CP
D
C
Q
PROGRAMMABLE
MULTIPLEXER
A
4
A
3
A
2
A
1
A
0
NC
O
0
4 3 2 1 282726
25
5
24
6
23
7
22
8
21
9
20
10
19
11
18
121314151617
O1
O2
GND
NC
O3
O4
O5
A5
A6
A7
NC
V
CC
A8
A9
LCC/PLCC (Opaque only)
Top View
A
10
INIT
E/E
S
CP
NC
O
7
O
6
Selection Guide
Minimum Address Set-Up Time
Maximum Clock to Output
Maximum Operating Standard
Current
7C245A-15
15
10
120
7C245A-18
18
12
120
120
7C245A-25
25
12
90
120
7C245A-35
35
15
90
120
Unit
ns
ns
mA
mA
Commercial
Military
Cypress Semiconductor Corporation
Document #: 38-04007 Rev. *B
3901 North First Street
San Jose
CA 95134 • 408-943-2600
Revised December 27, 2002

CY7C245A-35JCT相似产品对比

CY7C245A-35JCT 5962-88735033X 5962-8873504LX CY7C245A-25JCT CY7C245A-18JCT CY7C245A-25SCT CY7C245A-25JIT CY7C245A-25JI CY7C245A-15JCT CY7C245A-15JIT
描述 OTP ROM, 2KX8, 25ns, CMOS, PQCC28, PLASTIC, LCC-28 OTP ROM, 2KX8, 15ns, CMOS, CQCC28, OTP ROM, 2KX8, 15ns, CMOS, CDIP24 OTP ROM, 2KX8, 15ns, CMOS, PQCC28, PLASTIC, LCC-28 OTP ROM, 2KX8, 12ns, CMOS, PQCC28, PLASTIC, LCC-28 OTP ROM, 2KX8, 15ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOIC-24 OTP ROM, 2KX8, CMOS, PQCC28, PLASTIC, LCC-28 OTP ROM, 2KX8, CMOS, PQCC28, PLASTIC, LCC-28 OTP ROM, 2KX8, 10ns, CMOS, PQCC28, PLASTIC, LCC-28 OTP ROM, 2KX8, 10ns, CMOS, PQCC28, PLASTIC, LCC-28
包装说明 QCCJ, QCCN, DIP, PLASTIC, LCC-28 QCCJ, SOP, QCCJ, QCCJ, QCCJ, QCCJ,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-30 代码 S-PQCC-J28 S-CQCC-N28 R-CDIP-T24 S-PQCC-J28 S-PQCC-J28 R-PDSO-G24 S-PQCC-J28 S-PQCC-J28 S-PQCC-J28 S-PQCC-J28
内存密度 16384 bit 16384 bit 16384 bit 16384 bit 16384 bit 16384 bit 16384 bit 16384 bit 16384 bit 16384 bit
内存集成电路类型 OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM
内存宽度 8 8 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 28 28 24 28 28 24 28 28 28 28
字数 2048 words 2048 words 2048 words 2048 words 2048 words 2048 words 2048 words 2048 words 2048 words 2048 words
字数代码 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 125 °C 125 °C 70 °C 70 °C 70 °C 85 °C 85 °C 70 °C 85 °C
组织 2KX8 2KX8 2KX8 2KX8 2KX8 2KX8 2KX8 2KX8 2KX8 2KX8
封装主体材料 PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QCCJ QCCN DIP QCCJ QCCJ SOP QCCJ QCCJ QCCJ QCCJ
封装形状 SQUARE SQUARE RECTANGULAR SQUARE SQUARE RECTANGULAR SQUARE SQUARE SQUARE SQUARE
封装形式 CHIP CARRIER CHIP CARRIER IN-LINE CHIP CARRIER CHIP CARRIER SMALL OUTLINE CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES NO YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL MILITARY MILITARY COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
端子形式 J BEND NO LEAD THROUGH-HOLE J BEND J BEND GULL WING J BEND J BEND J BEND J BEND
端子位置 QUAD QUAD DUAL QUAD QUAD DUAL QUAD QUAD QUAD QUAD
零件包装代码 QLCC - - QLCC QLCC SOIC QLCC QLCC QLCC QLCC
针数 28 - - 28 28 24 28 28 28 28
最长访问时间 25 ns 15 ns 15 ns 15 ns 12 ns 15 ns - - 10 ns 10 ns
其他特性 PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS - - PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS -
长度 11.5316 mm - - 11.5316 mm 11.5316 mm 15.4 mm - - 11.5316 mm 11.5316 mm
输出特性 3-STATE - - 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
座面最大高度 4.572 mm - - 4.572 mm 4.572 mm 2.65 mm - - 4.572 mm 4.572 mm
端子节距 1.27 mm - - 1.27 mm 1.27 mm 1.27 mm - - 1.27 mm 1.27 mm
宽度 11.5316 mm - - 11.5316 mm 11.5316 mm 7.5 mm - - 11.5316 mm 11.5316 mm
厂商名称 - - Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯)
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