电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

C114T221M1X5CR

产品描述Multilayer Ceramic Capacitors MLCC - Leaded 220.PF 100V
产品类别无源元件    电容器   
文件大小1MB,共16页
制造商KEMET(基美)
官网地址http://www.kemet.com
下载文档 详细参数 全文预览

C114T221M1X5CR在线购买

供应商 器件名称 价格 最低购买 库存  
C114T221M1X5CR - - 点击查看 点击购买

C114T221M1X5CR概述

Multilayer Ceramic Capacitors MLCC - Leaded 220.PF 100V

C114T221M1X5CR规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
包装说明,
Reach Compliance Codenot_compliant
ECCN代码EAR99
电容0.00022 µF
电容器类型CERAMIC CAPACITOR
直径2.29 mm
介电材料CERAMIC
JESD-609代码e0
长度4.06 mm
安装特点THROUGH HOLE MOUNT
多层Yes
负容差20%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形状TUBULAR PACKAGE
封装形式Axial
包装方法BULK
正容差20%
额定(直流)电压(URdc)100 V
参考标准MIL-PRF-39014
表面贴装NO
温度特性代码BX
温度系数15% ppm/°C
端子面层Tin/Lead (Sn60Pb40)
端子形状WIRE
Base Number Matches1

文档预览

下载PDF文档
MULTILAYER CERAMIC CAPACITORS/AXIAL
& RADIAL LEADED
Multilayer ceramic capacitors are available in a
variety of physical sizes and configurations, including
leaded devices and surface mounted chips. Leaded
styles include molded and conformally coated parts
with axial and radial leads. However, the basic
capacitor element is similar for all styles. It is called a
chip and consists of formulated dielectric materials
which have been cast into thin layers, interspersed
with metal electrodes alternately exposed on opposite
edges of the laminated structure. The entire structure is
fired at high temperature to produce a monolithic
block which provides high capacitance values in a
small physical volume. After firing, conductive
terminations are applied to opposite ends of the chip to
make contact with the exposed electrodes.
Termination materials and methods vary depending on
the intended use.
TEMPERATURE CHARACTERISTICS
Ceramic dielectric materials can be formulated with
Class III:
General purpose capacitors, suitable
a wide range of characteristics. The EIA standard for
for by-pass coupling or other applications in which
ceramic dielectric capacitors (RS-198) divides ceramic
dielectric losses, high insulation resistance and
dielectrics into the following classes:
stability of capacitance characteristics are of little or
no importance. Class III capacitors are similar to Class
Class I:
Temperature compensating capacitors,
II capacitors except for temperature characteristics,
suitable for resonant circuit application or other appli-
which are greater than ± 15%. Class III capacitors
cations where high Q and stability of capacitance char-
have the highest volumetric efficiency and poorest
acteristics are required. Class I capacitors have
stability of any type.
predictable temperature coefficients and are not
affected by voltage, frequency or time. They are made
KEMET leaded ceramic capacitors are offered in
from materials which are not ferro-electric, yielding
the three most popular temperature characteristics:
superior stability but low volumetric efficiency. Class I
C0G:
Class I, with a temperature coefficient of 0 ±
capacitors are the most stable type available, but have
30 ppm per degree C over an operating
the lowest volumetric efficiency.
temperature range of - 55°C to + 125°C (Also
known as “NP0”).
Class II:
Stable capacitors, suitable for bypass
X7R:
Class II, with a maximum capacitance
or coupling applications or frequency discriminating
change of ± 15% over an operating temperature
circuits where Q and stability of capacitance char-
range of - 55°C to + 125°C.
acteristics are not of major importance. Class II
Z5U:
Class III, with a maximum capacitance
capacitors have temperature characteristics of ± 15%
change of + 22% - 56% over an operating tem-
or less. They are made from materials which are
perature range of + 10°C to + 85°C.
ferro-electric, yielding higher volumetric efficiency but
less stability. Class II capacitors are affected by
Specified electrical limits for these three temperature
temperature, voltage, frequency and time.
characteristics are shown in Table 1.
SPECIFIED ELECTRICAL LIMITS
Parameter
Dissipation Factor: Measured at following conditions.
C0G – 1 kHz and 1 vrms if capacitance >1000pF
1 MHz and 1 vrms if capacitance 1000 pF
X7R – 1 kHz and 1 vrms* or if extended cap range 0.5 vrms
Z5U – 1 kHz and 0.5 vrms
Dielectric Stength: 2.5 times rated DC voltage.
Insulation Resistance (IR): At rated DC voltage,
whichever of the two is smaller
Temperature Characteristics: Range, °C
Capacitance Change without
DC voltage
* MHz and 1 vrms if capacitance
100 pF on military product.
Temperature Characteristics
C0G
X7R
2.5%
(3.5% @ 25V)
Z5U
0.10%
4.0%
Pass Subsequent IR Test
1,000 M
F
or 100 G
-55 to +125
0 ± 30 ppm/°C
1,000 M
F
or 100 G
-55 to +125
± 15%
1,000 M
or 10 G
F
+ 10 to +85
+22%,-56%
Table I
4
© KEMET Electronics Corporation, P.O. Box 5928, Greenville, S.C. 29606, (864) 963-6300
单片机接收字节的C程序,请给指点下.谢谢
我在SPI(C语言)上有计算出一个字节,DSP(汇编)上计算出4个字节,然后DSP上的4个字节要一个一个的发送到SPI上进行比较.如果发送的第一个字节就与SPI上的字节相同,就OK.不同的话就继续发下一个字节. ......
fuqiang 嵌入式系统
STM32F103RCWWDG不复位
STM32F103RC WWDG不复位 : 用的IAR的例程, /* WWDG clock counter = (PCLK1/4096)/8 = 244 Hz (~4 ms)*/ WWDG_SetPrescaler(WWDG_Prescaler_8); /* Set Window value to 65 ......
冰冰忍者 stm32/stm8
学习Windows内核驱动,须要硬件吗?(穷学生该如何解决呢?)
自己正在上学,自认为编程基础还不错,想学习Windows内核驱动开发。 但是,现在只跟着书学了一点。由于没有具体硬件,就没法执行书中的例子。 是不是,该买硬件了,买什么硬件呢(必须要 ......
poiuyt 嵌入式系统
Linux下的驱动工程师薪水一般性怎么样
由于马上要工作了 想问问linux嵌入式工程师工资水平怎么样?哪一个方向比较好?比如图像阿 网络 什么的...
hustvic Linux开发
寻找类似ACS712这种霍尔电流传感芯片同类产品
我在做一个交流电流检测,输出直流电平或者电流的,我的产品工作电流不大,才几百mA,本来霍尔电流传感器可以用的,但是太贵,一个都得好几十块钱,后来找到ACS712这种集成在芯片内的传感IC,但 ......
bogg 综合技术交流
【逆变问题】波形异常,求助。,,
1,spwm波通过msp430f149查表法产生。 2,正弦波频率50hz,spwm波频率30khz左右。 3,桥和滤波应该都没为问题,因为通过了一个专门逆变芯片的验证。 4,上下的波对称。 下面是图片: 问题 ......
cemacs 电源技术

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2725  2809  1331  1764  1509  44  51  35  21  40 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved