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PD - 90577
REPETITIVE A ALANCHE AND dv/dt RATED
V
HEXFET TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number
IRFAF50
IRFAF50
900V, N-CHANNEL
BVDSS
900V
R
DS(on)
I
D
1.6Ω
6.2Α
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
I DM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
6.2
4.0
25
150
1.2
±20
870
6.2
15
1.5
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
11.5(typical)
W
W/°C
Units
A
V
mJ
A
mJ
V/ns
o
C
g
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1
01/24/01
IRFAF50
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
∆BV
DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
900
—
—
—
2.0
4.9
—
—
—
—
80
7.5
48
—
—
—
—
—
Typ Max Units
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
—
—
1.6
1.85
4.0
—
25
250
100
-100
180
17
110
33
66
200
57
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID =4.0A
➃
VGS = 10V, ID =6.2A
➃
VDS = VGS, ID =250µA
VDS > 15V, IDS =4.0A
➃
VDS=720V, VGS=0V
VDS =720V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 6.2A
VDS = 450V
VDD = 400V*, ID =6.2A,
RG =2.35Ω
IGSS
Gate-to-Source Leakage Forward
I GSS
Gate-to-Source Leakage Reverse
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain (‘Miller’) Charge
td
(on)
Turn-On Delay Time
tr
Rise Time
td
(off)
Turn-Off Delay Time
tf
Fall Time
LS + LD
Total Inductance
nA
nC
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2700
500
200
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
*Equipment Limitation
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
6.2
25
1.8
1500
11
Test Conditions
A
T
j
= 25°C, IS =6.2A, VGS = 0V
➃
Tj = 25°C, IF =6.2A, di/dt
≤
100A/µs
VDD
≤
50V
➃
V
nS
µC
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
R thJA
Junction to Case
Junction to Ambient
Min Typ Max Units
—
—
—
—
0.83
30
°C/W
Test Conditions
Typical socket mount
For footnotes refer to the last page
2
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IRFAF50
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFAF50
13 a& b
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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