T-1 3/4 PACKAGE
PIN PHOTODIODE
Description
The MID-86416 is a photodiode mounted in water clear
end look plastic package and suitable for the variety
wavelength.
5.00
(.200)
MID-86416
Package Dimensions
Unit: mm ( inches )
5.45
(.215)
4.30
(.170)
5.80
(.228)
1.00
(.040)
FLAT DENOTES CATHODE
SEE NOTE 2
Features
l
l
l
l
l
l
23.50 MIN.
(.920)
0.50 TYP.
(.020)
High photo sensitivity
Low junction capacitance
High cut-off frequency
Fast switching time
Acceptance viwe angle : 130°
Chip size : 64mil × 64mil
1.00 MIN.
(.040)
2.54 NOM.
(.100)
SEE NOTE 3
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.0 mm (.040") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
150
Unit
mW
-55
o
C to + 100
o
C
-55
o
C to + 100
o
C
260
o
C for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
MID-86416
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Reverse Break Down Voltage
Reverse Dark Current
Open Circuit Voltage
Rise Time
Fall Time
Light Current
Total Capacitance
Test Conditions
I
R
=100µA
Ee=0
V
R
=10V
Ee=0
λ=850nm
Ee=0.1mW/cm
2
V
R
=10V,λ=850nm
R
L
=1KΩ
V
R
=5V ,
λ=850nm
Ee=0.1mW/cm
2
V
R
=3V , f=1MH
Z
Ee=0
Tr
Tf
I
L
C
T
Symbol
V
(BR)R
I
D
V
OC
350
30
40
3
17
µA
pF
Min.
30
30
Type .
Max.
Unit
V
nA
mV
nsec
Typical Optical-Electrical Characteristic Curves
4000
100
80
60
40
20
0
0
5
10
15
20
0.01
0.1
1
10
100
3000
2000
1000
0
Reverse Volatage - V
R
FIG.1 DARK CURRENT VS REVERSE VOLTAGE
T
A
=25
o
C, Ee=0 mW/cm
2
200
Reverse Voltage- V
R
FIG.2 CAPACITANCE VS. REVERSE VOLTAGE
F=1MHZ, Ee=0mW/cm
2
1000
Total Power Dissipation mW
150
Dark Current IR - nA
Capacitance C - pF
0
20
40
60
80
100
Dark Current - pA
100
100
10
50
1
0
0.1
o
0
20
40
60
80
Ambient Temperature - C
FIG.3 TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
Ambient Temperature - C
FIG.4 DARK CURRENT VS AMBIENT
TEMPERATURE
VR=10, Ee=0 mw/cm
2
o
100
Unity Opto Technology Co., Ltd.
02/04/2002
MID-86416
Typical Optical-Electrical Characteristic Curves
Relative Spectral Sensitivity
100
80
60
40
20
0
400
600
800
1000
1200
1000
Ip -
µ
A
Photocurrnet
100
100
10
1
0.1
0.01
0.1
1
2
10
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
0° 10° 20°
30°
40°
1.0
0.9
0.8
50
60
70
°
80°
90
0.5 0.3 0.1 0.2 0.4 0.6
Irradiance Ee (mW/cm )
FIG.6 PHOTOCURRENT VS.
IRRADIANCE = 850 nm
Relative Sensitivity
FIG .7 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
