GaAlAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-524H4 is a GaAlAs infrared LED having
a peak wavelength at 850 nm . It feature ultra-high
power, high response speed and molded in water
clear plastic package, the MIE-524H4 have greatly
improved long-distance characteristics as well as
as significantly increased its range of applicability.
1.00
(.040)
SEE NOTE 2
7.62
(.300)
φ5.05
(.200)
MIE-524H4
Unit: mm (inches)
Package Dimensions
5.47
(.215)
5.90
(.230)
Features
l
FLAT DENOTES CATHODE
Ultra-High radiant incidence
Ultra-high speed response
High modulation bandwidth
Standard T-1 3/4 (
φ
5mm ) package
Radiation angle : 20°
Peak wavelength
λ
p
= 850 nm
A
1.00MIN.
(.040)
2.54NOM.
(.100)
SEE NOTE 3
0.50 TYP.
(.020)
23.40 MIN
(.920)
l
l
l
l
l
C
Applications
l
Free air transmission systems with high -speed
response
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
l
SIR
Absolute Maximum Ratings
'@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
11/17/2000
MIE-524H4
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Radiant Intensity
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth
Half View Angle
Rise Time
Fall Time
Relative Radiant Intensity
1
Test Conditions
I
F
=20mA
I
F
=50mA
V
R
=5V
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=50mA
I
F
=50mA
Symbol
Min.
Typ.
6.5
1.5
850
30
20
20
30
Max.
1.8
10
Unit
mW/sr
V
µA
nm
nm
deg .
nsec
nsec
Ie
V
F
I
R
λp
∆λ
2θ
1/2
Tr
Tf
Forward Current I
F
60
50
40
30
20
10
0
Typical Optical-Electrical Characteristic Curves
0.5
0
750
850
950
-55 -25
0
25
50 75 100 125
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
100
Output Power To Value I
F
=20mA
Ambient Temperature T
A
(
o
C )
FIG.2 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
3
2.5
2
1.5
1
0.5
0
-40
-20
0
20
40
60
Forward Current
80
60
40
20
0
0.8
1.2
1.6
2.0
2.4
2.8
Forward Voltage(V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
Output Power Relative To
Value at I
F
=20mA
5
4
3
2
1
0
0
20
40
60
80
100
Ambient Temperature T
A
(
o
C )
FIG.4 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
0° 10°
20°
30°
40°
1.0
0.9
0.8
0.5 0.3 0.1
0.2 0.4 0.6
50°
60°
70°
80°
90°
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
Relative Radiant
FIG.6 RADIATION DIAGRAM
11/17/2000
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