MIG75J201H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG75J201H
High Power Switching Applications
Motor Control Applications
l
Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current,
under-voltage & over-temperature) in one package.
l
The electrodes are isolated from case.
l
High speed type IGBT
: V
CE (sat)
= 2.5 V (Max)
toff = 3.0 µs (Max)
trr = 0.30 µs (Max)
l
Package dimensions : TOSHIBA 2-110A1A
l
Weight : 520 g
Equivalent Circuit
1
2001-05-29
MIG75J201H
Maximum Ratings
(T
j
= 25°C )
Stage
Characteristic
Supply voltage
Collector-emitter voltage
Inverter
Collector current
Forward current
Collector power dissipation
Junction temperature
Supply voltage
Collector-emitter voltage
Collector current
Brake
Reverse voltage
Forward current
Collector power dissipation
Junction temperature
Control supply voltage
Control
Input voltage
Fault output voltage
Fault output current
Operating temperature
Module
Storage temperature range
Isolation voltage
Screw torque
AC 1 minute
M5
Condition
P-N power terminal
―
Tc = 25°C, DC
Tc = 25°C, DC
Tc = 25°C
―
P-N power terminal
―
Tc = 25°C, DC
―
Tc = 25°C, DC
Tc = 25°C
―
V
D
-GND terminal
IN-GND terminal
FO-GND (L) terminal
FO sink current
―
―
Symbol
V
CC
V
CES
I
C
I
F
P
C
T
j
V
CC
V
CES
I
C
V
R
I
F
P
C
T
j
V
D
V
IN
V
FO
I
FO
TC
T
stg
V
ISO
―
Ratings
450
600
75
75
195
150
450
600
30
600
30
80
150
20
20
20
14
−20
~ +100
−40
~ +125
2500
3
Unit
V
V
A
A
W
°C
V
V
A
V
A
W
°C
V
V
V
mA
°C
°C
V
Nm
Electrical Characteristics
(T
j
= 25°C)
a.
Inverter Stage
Characteristic
Collector cut-off current
Collector-emitter saturation
voltage
Forward voltage
Symbol
I
CEX
V
CE
= 600V
V
D
= 15 V, I
C
= 75 A
V
IN
= 15 V
→
0 V
I
F
= 75A
V
CC
= 300 V, I
C
= 75 A
V
D
= 15 V, V
IN
= 15 V
Inductive load
Test Condition
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min
―
―
―
―
―
―
0V
(Note 1)
―
―
―
Typ.
―
―
2.0
2.0
2.1
1.0
1.2
0.2
0.1
Max
1
20
2.5
―
3.0
2.0
3.0
0.5
0.3
µs
Unit
mA
V
CE (sat)
V
F
t
on
V
V
Switching time
t
off
t
f
t
rr
2
2001-05-29
MIG75J201H
b.
Brake Stage
Characteristic
Collector cut-off current
Symbol
I
CEX
V
CE
= 600V
V
D
= 15 V, I
C
= 30 A
V
IN
= 15 V
→
0 V
V
R
= 600 V
I
F
= 30A
V
CC
= 300 V, I
C
= 30 A
V
D
= 15 V, V
IN
= 15 V
Inductive load
Test Condition
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min
―
―
―
―
―
―
―
―
0V
(Note 1)
―
―
―
Typ.
―
―
1.7
1.6
―
―
2.0
0.9
1.7
0.25
0.15
Max
1
20
2.7
―
1
20
2.5
2.0
3.0
0.5
0.3
µs
Unit
mA
Collector-emitter saturation voltage
V
CE (sat)
V
Reverse current
Forward voltage
I
R
V
F
t
on
mA
V
Switching time
t
off
t
f
t
rr
c.
Control Stage
(T
j
= 25°C)
Characteristic
Symbol
I
D (H)
I
D (L)
V
IN (on)
V
IN (off)
I
FO (on)
I
FO (off)
OC
V
D
= 15 V
V
D
= 15 V, I
C
= 75 mA
V
D
= 15 V, I
C
= 75 mA
V
D
= 15 V
Test Condition
Min
―
―
1.3
2.2
8
―
105
40
157
60
―
110
―
―
V
D
= 15 V
11.0
―
1
Typ.
8
32
1.5
2.5
10
―
150
―
225
―
5
118
98
12.0
12.5
2
Max
―
―
1.7
2.8
12
1
―
―
―
―
―
125
―
12.5
―
3
Unit
mA
V
V
mA
Control circuit
current
High side
Low side
Input-on signal voltage
Input-off signal voltage
Fault output
current
Over current
protection
trip level
Short circuit
protection
trip level
Protection
Normal
Inverter
Brake
Inverter
Brake
V
D
= 15 V, T
j
= 125°C
A
SC
t
off (OC)
OT
OTr
UV
UVr
t
FO
V
D
= 15 V, T
j
= 125°C
V
D
= 15 V
Case temperature
A
µs
°C
Over current cut-off time
Over
temperature
protection
Control supply
under voltage
protection
Trip level
Reset level
Trip level
Reset level
V
ms
Fault output pulse width
3
2001-05-29
MIG75J201H
d.
Thermal Resistance
(T
j
= 25°C)
Characteristic
Symbol
Test Condition
Inverter IGBT stage
Junction to case thermal
resistance
R
th (j-c)
Inverter FRD stage
Brake IGBT stage
Brake FRD stage
Case to fin thermal
resistance
R
th (c-f)
Compound is applied
Min
―
―
―
―
―
Typ.
―
―
―
―
0.05
Max
0.553
1.000
1.562
2.000
―
°C / W
°C / W
Unit
Note 1: Switching time test circuit & timing chart
4
2001-05-29
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
