* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71747
S-80273-Rev. D, 11-Feb-08
www.vishay.com
1
PCB Mount
d
Symbol
R
thJA
R
thJC
Limit
40
0.75
Unit
°C/W
SUM60N04-05LT
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
DS
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 60 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 60 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 60 A, T
J
= 175 °C
Sense Diode Forward Voltage
Sense Diode Forward Voltage Increase
Forward
Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
Symbol
Test Conditions
Min.
40
1
Typ.
Max.
Unit
3
± 100
1
50
500
V
nA
µA
A
120
0.0035
0.0051
0.0045
0.0065
0.0069
0.0086
655
600
30
35
6000
715
660
80
Ω
V
FD1
and
V
FD2
ΔV
F
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
b
I
F
= 50 µA
I
F
= 25 µA
From I
F
= 25 µA to I
F
= 50 µA
V
DS
= 15 V, I
D
= 20 A
mV
S
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1100
700
130
pF
V
DS
= 20 V, V
GS
= 10 V, I
D
= 25 A
25
40
15
20
120
150
150
60
200
nC
Turn-Off Delay Time
c
V
DD
= 20 V, R
L
= 0.8
Ω
I
D
≅
25 A, V
GEN
= 10 V, R
g
= 2.5
Ω
80
100
100
ns
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
A
V
ns
A
µC
I
F
= 60 A, V
GS
= 0 V
I
F
= 60 A, di/dt = 100 A/µs
1.0
60
2.1
0.065
1.5
90
4
0.18
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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