电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N5403T-G

产品描述Diodes - General Purpose, Power, Switching VRRM=300V, IAV=3A
产品类别半导体    分立半导体   
文件大小78KB,共4页
制造商Comchip Technology
官网地址http://www.comchiptech.com/
下载文档 详细参数 选型对比 全文预览

1N5403T-G在线购买

供应商 器件名称 价格 最低购买 库存  
1N5403T-G - - 点击查看 点击购买

1N5403T-G概述

Diodes - General Purpose, Power, Switching VRRM=300V, IAV=3A

1N5403T-G规格参数

参数名称属性值
产品种类
Product Category
Diodes - General Purpose, Power, Switching
制造商
Manufacturer
Comchip Technology
RoHSDetails
系列
Packaging
Cut Tape
系列
Packaging
Reel
工厂包装数量
Factory Pack Quantity
1200

文档预览

下载PDF文档
General Purpose Silicon Rectifiers
1N5400-G Thru. 1N5408-G
Voltage: 50 to 1000 V
Current: 3.0 A
RoHS Device
Features
-Low forward voltage drop.
-High reliability.
-High current capability.
1.000(25.40) Min.
0.052(1.32)
DIA.
0.048(1.22)
DO-27 (DO-201AD)
-High surge current capability.
Mechanical data
-Case: Molded plastic
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Color band denotes cathode end
-Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
-Mounting position: Any
-Weight: 1.2 grams
0.375(9.53)
0.335(8.51)
0.220(5.60)
DIA.
0.197(5.00)
1.000(25.40) Min.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
.375”(9.5mm) Lead length
@T
A
=75°C
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage @3.0A
Maximum DC reverse current
at rated DC blocking voltage
@T
J
=25°C
@T
J
=100°C
Symbol
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408
Unit
-G
-G
-G
-G
-G
-G
-G
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
3.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
V
F
I
R
R
θJA
T
J
T
STG
200
1.0
5.0
100
18
-65 to +125
-65 to +150
A
V
μA
°C/W
°C
°C
Typical thermal resistance (Note 1)
Operating temperature range
Storage temperature range
NOTES:
1. Thermal resistance from junction to ambient 0.375” (9.5mm) lead length.
REV:A
QW-BG015
Page 1

1N5403T-G相似产品对比

1N5403T-G BLU1206P-35R2-DT10W 1N5403-G 1N5404T-G 1N5408T-G 1N5408-G RG1S-2183-BT201
描述 Diodes - General Purpose, Power, Switching VRRM=300V, IAV=3A Fixed Resistor, Thin Film, 0.25W, 35.2ohm, 150V, 0.5% +/-Tol, 10ppm/Cel, 1206 Diodes - General Purpose, Power, Switching VRRM=300V, IAV=3A Multilayer Ceramic Capacitors MLCC - SMD/SMT 10uF 35V X7R +/-10% 1206 Gen Purp Film Capacitors 630V .022uF 5% Terminals .250" PCB TERMINAL Res,Axial,Thick Film,218K Ohms,1.5KWV,.1% +/-Tol,200ppm TC
是否Rohs认证 - 符合 - 符合 符合 符合 -
Reach Compliance Code - compliant - compliant compliant compliant compliant
ECCN代码 - EAR99 - EAR99 EAR99 - EAR99
端子数量 - 2 - 2 2 2 2
最高工作温度 - 155 °C - 125 °C 125 °C 125 °C 155 °C
封装形式 - SMT - LONG FORM LONG FORM LONG FORM Axial
最低工作温度 - - - -65 °C -65 °C -65 °C -55 °C
封装形状 - - - ROUND ROUND ROUND CYLINDRICAL PACKAGE

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 12  1526  1122  2743  2493  19  38  3  55  29 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved