NTMFS4983NF
Power MOSFET
30 V, 106 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
•
•
•
•
•
Integrated Schottky Diode
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
CPU Power Delivery
Synchronous Rectification for DC−DC Converters
Low Side Switching
Telecom Secondary Side Rectification
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
v
10 sec
Power Dissipation
R
qJA,
t
v
10 sec
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
Dmaxpkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
30
22
3.13
48
34
7.7
22
16
1.7
106
76
38
320
100
−55 to
+150
54
6
101
W
A
A
°C
A
V/ns
mJ
W
A
W
A
W
A
Unit
V
V
A
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V
(BR)DSS
30 V
R
DS(ON)
MAX
2.1 mW @ 10 V
I
D
MAX
106 A
Applications
3.1 mW @ 4.5 V
N−CHANNEL MOSFET
D
(5, 6)
G
(4)
S
(1, 2, 3)
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
4983NF
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
NTMFS4983NFT1G
NTMFS4983NFT3G
Package
SO−8FL
(Pb−Free)
SO−8FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V, I
L
= 45 A
pk
,
L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
T
L
260
°C
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2015
1
August, 2015 − Rev. 4
Publication Order Number:
NTMFS4983NF/D
NTMFS4983NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Junction−to−Ambient − t
v
10 sec
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm
2
.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
3.3
40
74
16.3
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 1.0 mA
I
D
= 10 mA, referenced to 25°C
V
GS
= 10 V
I
D
= 30 A
I
D
= 15 A
V
GS
= 4.5 V
I
D
= 30 A
I
D
= 15 A
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
13.5
24.9
28.7
10.7
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
3250
1340
90
22.6
2.9
7.0
6.9
47.9
nC
nC
pF
g
FS
V
DS
= 1.5 V, I
D
= 15 A
1.2
1.7
5.0
1.6
1.6
2.5
2.5
60
S
3.1
mW
2.1
2.3
V
mV/°C
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 1.0 mA
I
D
= 10 mA, referenced to 25°C
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
30
15
500
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±20
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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NTMFS4983NF
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 2 A
T
J
= 25°C
T
J
= 125°C
0.4
0.32
45
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 2 A
23
22
50
nC
ns
0.7
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
9.4
16.7
35.2
7.4
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
0.65
0.20
1.5
1.0
nH
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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NTMFS4983NF
TYPICAL PERFORMANCE CURVES
200
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
200
3.6 V
V
GS
= 3.4 V
3.2 V
I
D
, DRAIN CURRENT (A)
180
160
140
120
100
80
60
40
20
5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
DS
= 5 V
4.0 V
4.2 V
I
D
, DRAIN CURRENT (A)
4.4 V to 4.5 V
3.0 V
7.5 V to 10 V
2.8 V
2.6 V
2.4 V
0
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
2.0E−02
1.8E−02
I
D
= 30 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
3.0E−03
Figure 2. Transfer Characteristics
2.8E−03 T
J
= 25°C
2.6E−03
2.4E−03
2.2E−03
2.0E−03
1.8E−03
1.6E−03
1.4E−03
1.2E−03
5
20
35
50
65
80
95
110 125 140 155
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V
V
GS
= 4.5 V
1.6E−02
1.4E−02
1.2E−02
1.0E−02
0.8E−02
0.6E−02
0.4E−02
0.2E−02
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
0.0E+00
2.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
1.7
I
D
= 20 A
1.6
V
GS
= 10 V
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
−50 −25
0
1.00E−01
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
I
DSS
, LEAKAGE (A)
1.00E−02
T
J
= 125°C
1.00E−03
1.00E−04
T
J
= 25°C
25
50
75
100
125
150
1.00E−05
0
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTMFS4983NF
TYPICAL PERFORMANCE CURVES
4000
3600
C, CAPACITANCE (pF)
3200
2800
2400
2000
1600
1200
800
400
0
0
5
10
15
20
25
30
C
rss
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE
(V)
11
10
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
45
50
Q
gs
Q
gd
I
D
= 30 A
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
Q
T
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 10 A
V
GS
= 10 V
100
t, TIME (ns)
t
f
t
r
10
t
d(on)
t
d(off)
10
9
8
7
6
5
4
3
2
1
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
10
ms
100
ms
1 ms
10 ms
1
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
dc
110
100
90
80
70
60
50
40
30
20
10
0
Figure 10. Diode Forward Voltage vs. Current
I
D
= 45 A
I
D
, DRAIN CURRENT (A)
100
10
0.1
0.01
0.01
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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