Si6544DQ
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
30
r
DS(on)
(W)
0.035 @ V
GS
= 10 V
0.050 @ V
GS
= 4.5 V
I
D
(A)
"4.0
"3.4
"3.5
"2.5
P-Channel
–30
0.045 @ V
GS
= –10 V
0.090 @ V
GS
= –4.5 V
D
1
S
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
D
8
D
2
S
2
S
2
G
2
G
1
G
2
Si6544DQ
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
30
"20
"4.0
"3.2
"20
1.25
1.0
P-Channel
–30
"20
"3.5
"2.8
"20
–1.25
Unit
V
A
W
0.64
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 70668
S-56944—Rev. C, 23-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
N- or P-Channel
125
Unit
_C/W
2-1
Si6544DQ
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= –30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= –30 V, V
GS
= 0 V, T
J
= 55_C
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
V
DS
w
–5 V, V
GS
= –10 V
V
GS
= 10 V, I
D
= 4.0 A
D i S
O S
R i
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –10 V, I
D
= –3.5 A
V
GS
= 4.5 V, I
D
= 3.4 A
V
GS
= –4.5 V, I
D
= –2.5 A
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 4.0 A
V
DS
= –15 V, I
D
= – 3.5 A
I
S
= 1.25 A, V
GS
= 0 V
I
S
= –1.25 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
A
–20
0.027
0.035
0.038
0.062
13
S
7.2
0.73
–0.77
1.2
V
–1.2
0.035
0.045
0.050
0.090
W
1.0
V
–1.0
"100
"100
1
–1
5
–5
mA
A
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage
I
GSS
Diode Forward Voltage
a
V
SD
Dynamic
b
N-Ch
Total Gate Charge
Q
g
N-Channel
N Channel
Ch
l
V
DS
= 15 V, V
GS
= 10 V, I
D
= 4.0 A
P-Channel
V
DS
= –15 V V
GS
= –10 V I
D
= –3.5 A
15 V,
10 V,
35
Gate-Drain Charge
Q
gd
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Turn-On Delay Time
t
d(on)
N-Channel
N Ch
l
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
P-Channel
V
DD
= –15 V R
L
= 15
W
15 V,
I
D
^
–1 A, V
GEN
= –10 V, R
G
= 6
W
1
10
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Fall Time
Source-Drain
Reverse R
R
Recovery Time
Ti
t
f
I
F
= 1.25 A, di/dt = 100 A/ms
I
F
= –1.25 A, di/dt = 100 A/ms
P-Ch
N-Ch
P-Ch
17.5
17
4.0
C
nC
4.4
2.5
3.1
12
13
9
10
25
33
20
10
25
30
20
20
20
20
50
ns
60
40
20
60
60
30
30
Gate-Source Charge
Q
gs
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
t
rr
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
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FaxBack 408-970-5600
2-2
Document Number: 70668
S-56944—Rev. C, 23-Nov-98
Si6544DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 10 thru 5 V
4V
16
I D – Drain Current (A)
I D – Drain Current (A)
16
20
N-CHANNEL
Transfer Characteristics
12
12
8
8
T
C
= 125_C
4
25_C
–55_C
0
4
3V
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.06
1500
Capacitance
C
iss
1200
0.05
r DS(on)– On-Resistance (
W
)
V
GS
= 4.5 V
C – Capacitance (pF)
0.04
900
0.03
V
GS
= 10 V
600
C
oss
300
C
rss
0
0.02
0.01
0
0
4
8
12
16
20
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
DS
= 15 V
I
D
= 4.0 A
1.8
1.6
r DS(on)– On-Resistance (
W
)
(Normalized)
1.4
1.2
1.0
0.8
0.6
0.4
–50
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
8
V
GS
= 10 V
I
D
= 4.0 A
6
4
2
0
0
4
8
12
16
20
Q
g
– Total Gate Charge (nC)
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Document Number: 70668
S-56944—Rev. C, 23-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si6544DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
0.12
N-CHANNEL
On-Resistance vs. Gate-to-Source Voltage
I S – Source Current (A)
10
r DS(on)– On-Resistance (
W
)
0.09
I
D
= 4.0 A
T
J
= 150_C
0.06
T
J
= 25_C
0.03
0
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
0
1
3
5
7
9
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.6
I
D
= 250
mA
0.3
V GS(th) Variance (V)
32
40
Single Pulse Power
Power (W)
0.0
24
–0.3
16
–0.6
8
–0.9
–50
–25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
2. Per Unit Base = R
thJA
= 125_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70668
S-56944—Rev. C, 23-Nov-98
Si6544DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 10 to 5 V
20
P-CHANNEL
Transfer Characteristics
16
I D – Drain Current (A)
16
4V
I D – Drain Current (A)
12
12
8
8
T
C
= 125_C
4
4
3V
25_C
–55_C
0
0
2
4
6
8
10
0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
1500
Capacitance
C
iss
r DS(on)– On-Resistance (
W
)
0.16
C – Capacitance (pF)
1200
0.12
900
0.08
V
GS
= 4.5 V
V
GS
= 10 V
600
C
oss
300
C
rss
0.04
0
0
4
8
12
16
20
0
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
DS
= 15 V
I
D
= 4.0 A
V GS – Gate-to-Source Voltage (V)
Gate Charge
1.8
1.6
r DS(on)– On-Resistance (
W
)
(Normalized)
1.4
1.2
1.0
0.8
0.6
0.4
–50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 4.0 A
8
6
4
2
0
0
4
8
12
16
20
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70668
S-56944—Rev. C, 23-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
2-5
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