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MJ11013 MJ11015 MJ11012 MJ11014 MJ11016
(1) Pulse Test: Pulse Width
=
300
µs,
Duty Cycle
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted.)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS(1)
OFF CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 20 A, IB = 200 mAdc)
(IC = 30 A, IB = 300 mAdc)
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 200 mAdc)
(IC = 30 Adc, IB = 300 mAdc)
DC Current Gain
(IC = 20 Adc,VCE = 5 Vdc)
(IC = 30 Adc, VCE = 5 Vdc)
Current–Gain Bandwidth Product
(IC = 10 A, VCE = 3 Vdc, f = 1 MHz)
Collector–Emitter Leakage Current
(VCE = 50 Vdc, IB = 0)
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
Collector–Emitter Leakage Current
(VCE = 60 Vdc, RBE = 1k ohm)
(VCE = 90 Vdc, RBE = 1k ohm)
(VCE = 120 Vdc, RBE = 1k ohm)
(VCE = 60 Vdc, RBE = 1k ohm, TC = 150
_
C)
(VCE = 90 Vdc, RBE = 1k ohm, TC = 150
_
C)
(VCE = 120 Vdc, RBE = 1k ohm, TC = 150
_
C)
Collector–Emitter Breakdown Voltage(1)
(IC = 100 mAdc, IB = 0)
2
Characteristics
v
2.0%.
MJ11012
MJ11013, MJ11014
MJ11015, MJ11016
MJ11012
MJ11013, MJ11014
MJ11015, MJ11016
MJ11012
MJ11013, MJ11014
MJ11015, MJ11016
Motorola Bipolar Power Transistor Device Data
V(BR)CEO
VCE(sat)
VBE(sat)
Symbol
ICEO
IEBO
ICER
hFE
hfe
1000
200
Min
60
90
120
—
—
—
—
—
—
—
—
—
—
—
—
4
Max
3.5
5
—
—
—
—
—
—
3
4
1
5
1
1
1
5
5
5
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
—
MJ11013 MJ11015 MJ11012 MJ11014 MJ11016
30 k
20 k
hFE, DC CURRENT GAIN
10 k
7k
5k
3k
2k
hFE , SMALL–SIGNAL CURRENT GAIN (NORMALIZED)
PNP MJ11013, MJ11015
NPN MJ11012, MJ11014, MJ11016
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
10
VCE = 3 Vdc
IC = 10 mAdc
TJ = 25°C
20
30
50 70 100
200 300
f, FREQUENCY (kHz)
500 700 1.0 k
PNP MJ11013, MJ11015
NPN MJ11012, MJ11014, MJ11016
700
500
300
0.3
VCE = 5 Vdc
TJ = 25°C
0.5 0.7
1
2
3
5 7 10
IC, COLLECTOR CURRENT (AMP)
20
30
Figure 2. DC Current Gain (1)
Figure 3. Small–Signal Current Gain
5
IC, COLLECTOR CURRENT (AMP)
PNP MJ11013, MJ11015
NPN MJ11012, MJ11014, MJ11016
4
V, VOLTAGE (VOLTS)
TJ = 25°C
IC/IB = 100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
2
3
BONDING WIRE LIMITATION
THERMAL LIMITATION @ TC = 25°C
SECOND BREAKDOWN LIMITATION
MJ11012
MJ11013, MJ11014
MJ11015, MJ11016
5
7
10
20
30
50
70 100
200
3
2
VBE(sat)
VCE(sat)
1
0
0.1
0.2
0.5
1
2
5
10
20
50
100
IC, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. “On” Voltages (1)
Figure 5. Active Region DC Safe Operating Area
There are two limitations on the power handling ability of a
transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE lim-
its of the transistor that must be observed for reliable opera-
tions e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
Motorola Bipolar Power Transistor Device Data
3
MJ11013 MJ11015 MJ11012 MJ11014 MJ11016
PACKAGE DIMENSIONS
A
N
C
–T–
E
D
U
V
2
2 PL
SEATING
PLANE
K
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
0.13 (0.005)
L
G
1
T Q
M
Y
M
–Y–
H
B
–Q–
0.13 (0.005)
M
T Y
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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4
◊
Motorola Bipolar Power Transistor Device Data
*MJ11012/D*
MJ11012/D
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