VS-ST173C Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 330 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case A-PUK (TO-200AB)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
A-PUK (TO-200AB)
• High speed performance
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
Circuit configuration
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
C
/T
hs
A-PUK (TO-200AB)
Single SCR
330 A
1000 V, 1200 V
2.07 V
4680 A
4900 A
200 mA
55 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Range
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
330
55
610
25
4680
4900
110
100
1000 to 1200
15 to 30
-40 to 125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
10
12
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
1100
1300
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
40
VS-ST173C..C
Revision: 12-Sep-17
Document Number: 94366
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST173C Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
r
Voltage before turn-on V
d
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
760
730
600
350
50
V
DRM
50
40
47/0.22
660
590
490
270
1200
1260
1200
850
50
V
DRM
-
1030
1080
1030
720
5570
2800
1620
800
50
V
DRM
-
4920
2460
1390
680
V
A/μs
55
47/0.22
°C
μF
A
55
40
47/0.22
55
40
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
330 (120)
55 (85)
610
4680
4900
3940
Sinusoidal half wave,
initial T
J
= T
J
maximum
4120
110
100
77
71
1100
2.07
1.55
1.61
0.87
0.77
600
1000
m
V
kA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
I
TM
= 600 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate
of rise of turned on current
Typical delay time
minimum
Maximum turn-off time
maximum
t
q
SYMBOL
dI/dt
t
d
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= rated V
DRM
, I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
maximum,
I
TM
= 300 A, commutating dI/dt = 20 A/μs
V
R
= 50 V, t
p
= 500 μs, dV/dt: see table in device code
VALUES
1000
1.1
15
30
μs
UNITS
A/μs
Revision: 12-Sep-17
Document Number: 94366
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST173C Series
www.vishay.com
Vishay Semiconductors
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
40
UNITS
V/μs
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
Stg
R
thJ-hs
R
thC-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.17
0.08
0.033
0.017
4900
(500)
50
See dimensions - link at the end of datasheet
N
(kg)
g
K/W
UNITS
°C
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
A-PUK (TO-200AB)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.015
0.018
0.024
0.035
0.060
DOUBLE SIDE
0.016
0.019
0.024
0.035
0.060
RECTANGULAR CONDUCTION
SINGLE SIDE
0.011
0.019
0.026
0.036
0.060
DOUBLE SIDE
0.011
0.019
0.026
0.037
0.061
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 12-Sep-17
Document Number: 94366
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST173C Series
www.vishay.com
Vishay Semiconductors
130
ST173C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
130
Maximum Allowable
Heatsink Temperature (°C)
Maximum Allowable
Heatsink Temperature (°C)
120
110
100
90
80
70
30°
60
50
40
0
40
80
ST173C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
120
110
100
90
80
70
60
50
40
30
20
240
0
100
30°
200
60°
90°
300
Ø
Ø
Conduction angle
Conduction period
60°
90°
120° 180°
120°
180°
400
500
DC
120
160
200
600
700
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 4 - Current Ratings Characteristics
130
1000
110
100
90
80
70
60
50
40
30
20
0
50
100
150
Maximum Average On-State
Power Loss (W)
120
Maximum Allowable
Heatsink Temperature (°C)
ST173C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
900
800
700
600
500
400
300
200
100
0
0
50
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction period
Ø
Conduction angle
ST173C..C Series
T
J
= 125 °C
100 150 200 250 300 350 400 450
90°
30°
60°
120°
180°
DC
200
250
300
350
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 5 - On-State Power Loss Characteristics
130
1400
Maximum Average On-State
Power Loss (W)
Maximum Allowable
Heatsink Temperature (°C)
120
110
100
90
80
70
60
50
40
30
0
50
100
150
30°
ST173C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
1200
1000
800
Ø
DC
180°
120°
90°
60°
30°
RMS limit
Conduction angle
600
400
200
0
60°
90°
180°
120°
Ø
Conduction period
ST173C..C Series
T
J
= 125 °C
0
100
200
300
400
500
600
700
200
250
300
350
400
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 12-Sep-17
Document Number: 94366
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST173C Series
www.vishay.com
Vishay Semiconductors
1
ST173C..C Series
4500
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
On-State Current (A)
4000
Transient Thermal
Impedance Z
thJ-hs
(K/W)
0.1
3500
3000
0.01
2500
ST173C..C Series
2000
1
10
100
Steady state value
R
thJ-hs
= 0.17 K/W
(Single side cooled)
R
thJ-hs
= 0.08 K/W
(Double side cooled)
(DC operation)
0.01
0.1
1
10
0.001
0.001
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
0.01
Q
rr
- Maximum Reverse
Recovery Charge (µC)
Peak Half Sine Wave
On-State Current (A)
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
250
ST173C..C Series
T
J
= 125 °C
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
100
200
150
50
I
TM
= 50 A
ST173C..C Series
0
0.1
1
0
20
40
60
80
100
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Instantaneous On-State Current (A)
10 000
ST173C..C Series
160
140
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
I
rr
- Maximum Reverse
Recovery Current (A)
120
100
80
60
40
20
0
1000
T
J
= 25 °C
T
J
= 125 °C
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
ST173C..C Series
T
J
= 125 °C
0
20
40
60
80
100
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Reverse Recovered Current Characteristics
Revision: 12-Sep-17
Document Number: 94366
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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