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MJ11021

产品描述30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
产品类别分立半导体    晶体管   
文件大小129KB,共6页
制造商Motorola ( NXP )
官网地址https://www.nxp.com
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MJ11021概述

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

MJ11021规格参数

参数名称属性值
厂商名称Motorola ( NXP )
包装说明FLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
外壳连接COLLECTOR
最大集电极电流 (IC)15 A
基于收集器的最大容量600 pF
集电极-发射极最大电压250 V
配置DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)100
JEDEC-95代码TO-204AA
JESD-30 代码O-MBFM-P2
JESD-609代码e0
元件数量1
端子数量2
最高工作温度200 °C
封装主体材料METAL
封装形状ROUND
封装形式FLANGE MOUNT
极性/信道类型PNP
功耗环境最大值175 W
最大功率耗散 (Abs)175 W
认证状态Not Qualified
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式PIN/PEG
端子位置BOTTOM
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)6 MHz
VCEsat-Max3.4 V

文档预览

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ11017/D
Complementary Darlington
Silicon Power Transistors
. . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.
High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types)
Collector–Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) – MJ11018, 17
VCEO(sus)
= 250 Vdc (Min) – MJ11022, 21
Low Collector–Emitter Saturation
VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A
VCE(sat)
= 1.8 V (Typ) @ IC = 10 A
Monolithic Construction
100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.
MAXIMUM RATINGS
MJ11017
MJ11021*
NPN
MJ11018*
MJ11022
*Motorola Preferred Device
PNP
Rating
Symbol
VCEO
VCB
VEB
IC
IB
MJ11018
MJ11017
150
150
MJ11022
MJ11021
250
250
Unit
Vdc
Vdc
Vdc
Adc
Adc
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 120 VOLTS
200 WATTS
PD, POWER DISSIPATION (WATTS)
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Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current —
Continuous Peak
Base Current
50
15
30
0.5
Total Device Dissipation @ TC = 25
_
C
Derate Above 25
_
C
Operating and Storage Junction
Temperature Range
PD
175
1.16
Watts
W/
_
C
TJ, Tstg
– 65 to + 175
– 65 to + 200
_
C
THERMAL CHARACTERISTICS
Characteristic
CASE 1–07
TO–204AA
(TO–3)
Symbol
R
θJC
Max
Unit
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width 5.0 ms, Duty Cycle
v
10%.
0.86
_
C/W
200
150
100
50
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
175
200
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

MJ11021相似产品对比

MJ11021 MJ11022 MJ11018 MJ11017
描述 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
厂商名称 Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
包装说明 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknow unknow unknow unknow
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 15 A 15 A 15 A 15 A
基于收集器的最大容量 600 pF 400 pF 400 pF 600 pF
集电极-发射极最大电压 250 V 250 V 150 V 150 V
配置 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE) 100 100 100 100
JEDEC-95代码 TO-204AA TO-204AA TO-204AA TO-204AA
JESD-30 代码 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
JESD-609代码 e0 e0 e0 e0
元件数量 1 1 1 1
端子数量 2 2 2 2
最高工作温度 200 °C 200 °C 200 °C 200 °C
封装主体材料 METAL METAL METAL METAL
封装形状 ROUND ROUND ROUND ROUND
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 PNP NPN NPN PNP
功耗环境最大值 175 W 175 W 175 W 175 W
最大功率耗散 (Abs) 175 W 175 W 175 W 175 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 PIN/PEG PIN/PEG PIN/PEG PIN/PEG
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 6 MHz 3 MHz 3 MHz 3 MHz
VCEsat-Max 3.4 V 3.4 V 3.4 V 3.4 V
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