IC, COLLECTOR CURRENT (AMP)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
60
90
120
—
—
—
—
—
—
—
—
Max
—
—
—
Unit
Vdc
Collector–Emitter Breakdown Voltage (1)
(IC = 1 00 mAdc, IB = 0)
MJ11028, MJ11029
MJ11030, MJ11031
MJ11032, MJ11033
MJ11028, MJ11029
MJ11030, MJ11031
MJ11032, MJ11033
MJ11028, MJ11029
MJ11030, MJ11031
MJ11032, MJ11033
V(BR)CEO
Collector–Emitter Leakage Current
(VCE = 60 Vdc, RBE = 1 k ohm)
(VCE = 90 Vdc, RBE = 1 k ohm)
(VCE = 120 Vdc, RBE = 1 k ohm)
(VCE = 60 Vdc, RBE = 1 k ohm, TC = 150
_
C)
(VCE = 90 Vdc, RBE = 1 k ohm, TC = 150
_
C)
(VCE = 120 Vdc, RBE = 1 k ohm, TC = 150
_
C)
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
ICER
mAdc
2
2
2
10
10
10
5
2
Collector–Emitter Leakage Current (VCE = 50 Vdc, IB = 0)
DC Current Gain
(IC = 25 Adc, VCE = 5 Vdc)
(IC = 50 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 25 Adc, IB = 250 mAdc)
(IC = 50 Adc, IB = 500 mAdc)
Base–Emitter Saturation Voltage
(IC = 25 Adc, IB = 200 mAdc)
(IC = 50 Adc, IB = 300 mAdc)
100
50
20
10
5
2
1
0.5
0.2
0.1
0.2
0.5
1
2
5
10 20
50 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
200
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
MJ11028, 29
MJ11030, 31
MJ11032, 33
IEBO
ICEO
hFE
mAdc
mAdc
—
ON CHARACTERISTICS (1)
1k
400
—
—
—
—
18 k
—
2.5
3.5
3.0
4.5
VCE(sat)
Vdc
VBE(sat)
Vdc
(1) Pulse Test: Pulse Width
v
300
µs,
Duty Cycle
v
2.0%.
There are two limitations on the power–handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on T J(pk) = 200
_
C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by se-
cond breakdown.
Figure 2. DC Safe Operating Area
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
1
2
5
10
20
80
µs
(PULSED)
50
100
MJ11029, MJ11031, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
VCE = 5 V
TJ = 25°C
5
MJ11029, MJ11031, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
4
3
TJ = 25°C
IC/IB = 100
VBE(sat)
2
1
VCE(sat)
2 3
80
µs
(PULSED)
5
10
20
50
100
0
1
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
2
Figure 4. “On” Voltage
Motorola Bipolar Power Transistor Device Data
MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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4
◊
Motorola Bipolar Power Transistor Device Data
*MJ11028/D*
MJ11028/D
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