* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
www.vishay.com
1
Symbol
R
thJA
R
thJC
Limit
40
0.5
Unit
°C/W
SUP57N20-33
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
c
Test Conditions
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 160 V, V
GS
= 0 V
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 160 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 °C
V
DS
= 15 V, I
D
= 30 A
Min
200
2
Typ
Max
Unit
4
± 100
1
50
250
V
nA
µA
A
120
0.027
0.033
0.069
0.093
25
5100
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
480
210
90
130
pF
V
DS
= 100 V, V
GS
= 10 V, I
D
= 85 A
23
34
24
35
330
70
300
nC
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
V
DD
= 100 V, R
L
= 1.5
Ω
I
D
≅
65 A, V
GEN
= 10 V, R
G
= 2.5
Ω
220
45
200
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
b
65
140
I
F
= 65 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/µs
1.0
130
8
0.52
1.5
200
12
1.2
A
V
ns
A
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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