PD - 97092
IRF6620PbF
IRF6620TRPbF
l
l
l
l
l
l
l
l
l
RoHS Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
V
DSS
20V
R
DS(on)
max
2.7mΩ@V
GS
= 10V
3.6mΩ@V
GS
= 4.5V
Qg(typ.)
28nC
MX
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET ISOMETRIC
Description
The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6620PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6620PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620PbF offers particu-
larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 70°C
P
D
@T
A
= 25°C
E
AS
I
AR
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Power Dissipation
Continuous Drain Current, V
GS
@ 10V
Max.
20
±20
150
27
22
220
89
1.8
Units
V
k
Power Dissipation
h
Power Dissipation
h
e
k
@ 10V
Ãh
@ 10V
h
A
W
mJ
A
W/°C
°C
Single Pulse Avalanche Energy
Avalanche Current
Ãg
f
2.8
39
22
0.017
-40 to + 150
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
hl
Junction-to-Ambient
il
Junction-to-Ambient
jl
Junction-to-Case
kl
Junction-to-Ambient
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
Junction-to-PCB Mounted
Notes
through
are on page 2
www.irf.com
1
5/11/06
IRF6620PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
1.55
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
16
2.1
2.8
–––
-5.8
–––
–––
–––
–––
–––
28
9.5
3.5
8.8
6.2
12
16
18
80
20
6.6
4130
1160
560
–––
–––
2.7
3.6
2.45
–––
1.0
150
100
-100
–––
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
ns
nC
nC
V
DS
= 10V
V
GS
= 4.5V
I
D
= 22A
See Fig. 15
S
nA
V
mV/°C
µA
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 27A
g
V
GS
= 4.5V, I
D
= 22A
g
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 22A
mV/°C Reference to 25°C, I
D
= 1mA
V
DS
= 10V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
g
I
D
= 22A
Clamped Inductive Load
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current@ T
C
=25°C
(Body Diode)
Pulsed Source Current
(Body Diode)
e
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.8
23
13
110
A
220
1.0
35
20
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
p-n junction diode.
T
J
= 25°C, I
S
= 22A, V
GS
= 0V
g
T
J
= 25°C, I
F
= 22A
di/dt = 100A/µs
g
Notes:
Click on this section to link to the appropriate technical paper.
Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction
Mounted on minimum footprint full size board with
temperature.
Starting T
J
= 25°C, L = 0.16mH, R
G
= 25Ω, I
AS
= 22A.
Pulse width
≤
400µs; duty cycle
≤
2%.
metalized back and with small clip heatsink.
T
C
measured with thermal couple mounted to top
(Drain) of part.
R
θ
is measured at
T
J
of approximately 90°C.
2
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IRF6620PbF
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.7V
1
2.7V
≤
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000.0
Fig 2.
Typical Output Characteristics
1.5
100.0
T J = 150°C
10.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 27A
VGS = 10V
1.0
1.0
T J = 25°C
VDS = 10V
≤
60µs PULSE WIDTH
0.1
2.5
3.0
3.5
4.0
4.5
5.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
12
ID= 20A
VGS, Gate-to-Source Voltage (V)
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10
8
6
4
2
0
VDS= 20V
VDS= 10V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
1
10
100
0
20
40
60
80
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
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Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
3
IRF6620PbF
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
T J = 150°C
10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
1msec
10msec
100
1.0
T J = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
150
2.5
Fig 8.
Maximum Safe Operating Area
120
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
2.0
90
ID = 250µA
60
1.5
30
0
25
50
75
100
125
150
1.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Junction Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
100
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
1
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
A
τ
τ
4
Ri (°C/W)
1.28011
8.72556
21.75
13.251
τi
(sec)
0.000322
0.164798
2.2576
69
0.1
τ
2
τ
3
τ
4
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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RDS(on), Drain-to -Source On Resistance ( mΩ)
IRF6620PbF
12
160
10
EAS, Single Pulse Avalanche Energy (mJ)
ID = 27A
120
ID
TOP
7.2A
8.4A
BOTTOM
22A
8
6
80
4
T J = 125°C
40
2
T J = 25°C
2.0
4.0
6.0
8.0
10.0
0
0
25
50
75
100
125
150
VGS, Gate-to-Source Voltage (V)
Starting T J, Junction Temperature (°C)
Fig 12.
On-Resistance Vs. Gate Voltage
Fig 13c.
Maximum Avalanche Energy Vs. Drain Current
15V
L
D
V
DS
DRIVER
VDS
L
+
V
DD
-
RG
V
GS
20V
D.U.T
IAS
tp
+
V
- DD
A
D.U.T
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
0.01
Ω
Fig 13a.
Unclamped Inductive Test Circuit
V
(BR)DSS
tp
Fig 14a.
Switching Time Test Circuit
90%
V
DS
10%
V
GS
I
AS
t
d(on)
t
r
t
d(off)
t
f
Fig 13b.
Unclamped Inductive Waveforms
Fig 14b.
Switching Time Waveforms
Id
Vds
Vgs
L
0
DUT
1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a.
Gate Charge Test Circuit
Fig 15b.
Gate Charge Waveform
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