Continuous Source Current (MOSFET Diode Conduction)
a
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation (MOSFET)
a
Maximum Power Dissipation (Schottky)
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
J
, T
stg
P
D
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
F
I
FM
I
AS
E
AS
2.5
1.6
2.0
1.3
- 55 to 150
2.3
3.8
40
20
20
1.38
0.88
1.31
0.84
°C
W
mJ
10
8
50
1.25
2.4
A
10 sec
30
30
± 20
7.5
6
V
Steady State
Unit
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t
≤
10 sec)
a
Maximum Junction-to-Ambient (t = Steady State)
a
Maximum Junction-to-Foot (t = Steady State)
a
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
R
thJF
R
thJA
Symbol
Typical
36
44
73
77
17
24
Maximum
50
60
90
95
21
30
°C/W
Unit
Notes:
a. Surface Mounted on FR4 Board.
For SPICE model information vis the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72229
S-70138-Rev. C, 22-Jan-07
www.vishay.com
1
Si4810BDY
Vishay Siliconix
MOSFET AND SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
(MOSFET and Schottky)
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Schottky Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 3.0 A, di/dt = 100 A/µs
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
0.2
V
DS
= 15 V, V
GS
= 5.0 V, I
D
= 10 A
14.5
6.3
4.7
0.55
17
13
45
15
36
0.9
30
20
90
25
70
ns
Ω
22
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 15 V, I
D
= 10 A
I
S
= 3.0 A, V
GS
= 0 V
I
S
= 3.0 A, V
GS
= 0 V, T
J
= 125 °C
20
0.0105
0.016
25
0.485
0.420
0.53
0.47
0.0135
0.020
0.007
1.5
6.5
1
3
± 100
0.100
10
20
A
Ω
S
V
mA
V
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
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