The MJ15023 and MJ15025 are PowerBase power transistors designed for high
power audio, disk head positioners and other linear applications.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
Base Current — Continuous
Collector Current — Continuous
Peak (1)
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Base Voltage
Collector–Emitter Voltage
Characteristic
Rating
v
10%.
Symbol
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
VCEX
R
θJC
PD
IC
IB
MJ15023
350
200
– 65 to + 200
0.70
Max
250
1.43
400
16
30
5
5
16 AMPERE
SILICON
POWER TRANSISTORS
200 AND 250 VOLTS
250 WATTS
MJ15023
MJ15025 *
MJ15025
*Motorola Preferred Device
400
250
Order this document
by MJ15023/D
CASE 1–07
TO–204AA
(TO–3)
PNP
Watts
W/
_
C
_
C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
Vdc
_
C
1
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MJ15023 MJ15025
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
SECOND BREAKDOWN
OFF CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Current–Gain — Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 0.5 s (non–repetitive))
(VCE = 80 Vdc, t = 0.5 s (non–repetitive))
Emitter Cutoff Current
(VCE = 5 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
(VCE = 200 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
2
100
0.2
IC, COLLECTOR CURRENT (AMPS)
1.0
5.0
0.1
0.1
10
50
20
Figure 1. Active–Region Safe Operating Area
0.2
20
50 100
250 500
0.5 10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
Characteristic
v
2%.
TC = 25°C
1k
There are two limitations on the powerhandling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on T J(pk) = 200
_
C; TC is
variable depending on conditions. At high case temper-
atures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
MJ15023
MJ15025
MJ15023
MJ15025
Both
MJ15023
MJ15025
Motorola Bipolar Power Transistor Device Data
VCEO(sus)
VCE(sat)
VBE(on)
Symbol
ICEO
IEBO
ICEX
Cob
hFE
IS/b
fT
Min
200
250
15
5
—
—
—
—
—
—
—
—
4
5
2
Max
600
500
500
500
250
250
2.2
1.4
4.0
60
—
—
—
—
—
—
µAdc
µAdc
µAdc
MHz
Unit
Vdc
Vdc
Adc
—
pF
MJ15023 MJ15025
TYPICAL CHARACTERISTICS
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
4000
3000
C, CAPACITANCE (pF)
Cib
TJ = 25°C
9
8
7
6
5
4
3
2
1
0
0.1
TJ = 25°C
VCE = 10 V
fTest = 1 MHz
1000
500
Cob
100
0.3 0.5
1.0
5.0
10
30
50
100
300
VR, REVERSE VOLTAGE (VOLTS)
2.0
0.3
0.5
1.0
IC, COLLECTOR CURRENT (AMPS)
5.0
10
Figure 2. Capacitances
Figure 3. Current–Gain — Bandwidth Product
200
TJ = 100°C
100
hFE, DC CURRENT GAIN
50
TJ = 25°C
V, VOLTAGE (VOLTS)
VCE = 4.0 V
1.8
1.4
20
10
5.0
1.0
0.8
TJ = 25°C
VBE(on) @ VCE = 4.0 V
100°C
0.2
25°C
0.1
VCE(sat) @ IC/IB = 10
100°C
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMPS)
5.0
10
2.0
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMPS)
10
20
0
Figure 4. DC Current Gain
Figure 5. “On” Voltages
Motorola Bipolar Power Transistor Device Data
3
MJ15023 MJ15025
PACKAGE DIMENSIONS
A
N
C
–T–
E
D
U
V
2
2 PL
SEATING
PLANE
K
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
0.13 (0.005)
L
G
1
T Q
M
Y
M
–Y–
H
B
–Q–
0.13 (0.005)
M
T Y
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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