IRFH6200TRPbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 4.5V)
(@V
GS
= 2.5V)
20
0.99
1.50
155
1.3
100
V
mΩ
nC
Ω
A
Q
g (typical)
R
G (typical)
I
D
(@T
mb
= 25°C)
h
PQFN 5X6 mm
Applications
•
Charge and discharge switch for battery application
•
Load switch for 12V (typical) bus
•
Hot-Swap Switch
Features
Low R
DSon
(≤ 0.99mΩ)
Low Thermal Resistance to PCB (≤ 0.8°C/W)
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
results in
⇒
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Base Part Number
IRFH6200PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Orderable part number
IRFH6200TRPbF
IRFH6200TR2PbF
Note
EOL Notice #259
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
mb
= 25°C
I
D
@ T
mb
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
mb
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
20
±12
49
40
100
100
400
3.6
156
0.029
-55 to + 150
Units
V
g
g
c
h
h
A
W
W/°C
°C
g
Notes
through
are on page 9
1
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2015 International Rectifier
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May 19, 2015
IRFH6200TRPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Min.
20
–––
–––
–––
–––
0.5
–––
–––
–––
–––
–––
260
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
6.4
0.75
0.80
1.10
0.8
-6.6
–––
–––
–––
–––
–––
155
22
53
1.3
14
74
140
160
10890
2890
2180
Max. Units
–––
–––
0.95
0.99
1.50
1.1
–––
1.0
150
100
-100
–––
230
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
ns
Ω
nC
V
mV/°C
μA
nA
S
mΩ
V
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 50A
V
GS
= 4.5V, I
D
V
GS
= 2.5V, I
D
mV/°C Reference to 25°C, I
D
= 1mA
e
= 50A
e
= 50A
e
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
V
DS
= 10V, I
D
= 50A
V
DS
= 10V
V
GS
= 4.5V
I
D
= 50A (See Fig.17 & 18)
V
DD
= 10V, V
GS
= 4.5V
I
D
= 50A
R
G
=1.0Ω
See Fig.15
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Max.
780
30
Units
mJ
A
Avalanche Characteristics
d
Min.
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Typ.
–––
–––
–––
86
350
Max. Units
100
A
400
1.2
130
525
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 10V
di/dt = 260A/μs
e
eÃ
Thermal Resistance
Parameter
R
θJ
C-mb
R
θJ
C
(Top)
R
θJ
A
R
θJ
A
(<10s)
Junction-to-Mounting Base
Junction-to-Case
Junction-to-Ambient
Typ.
0.5
–––
–––
–––
Max.
0.8
15
35
22
°C/W
Units
g
Junction-to-Ambient
g
f
2
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May 19, 2015
IRFH6200TRPbF
1000
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
1000
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
1.3V
1.3V
≤
60μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.6
ID = 50A
1.4
VGS = 4.5V
ID, Drain-to-Source Current (A)
100
T J = 175°C
T J = 25°C
1.2
1.0
10
0.8
1.0
0.5
1.0
VDS = 10V
≤60μs
PULSE WIDTH
1.5
2.0
2.5
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 50A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
VDS= 16V
VDS= 10V
Ciss
10000
Coss
Crss
1000
1
10
VDS, Drain-to-Source Voltage (V)
100
0
100
200
300
400
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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2015 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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May 19, 2015
IRFH6200TRPbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 150°C
10msec
100
100μsec
1msec
10
DC
Tc = 25°C
Tj = 150°C
Single Pulse
1
0.1
1
10
100
10
T J = 25°C
VGS = 0V
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
400
Fig 8.
Maximum Safe Operating Area
1.6
VGS(th) , Gate threshold Voltage (V)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
ID = 150μA
ID = 500μA
ID = 1.0mA
ID = 1.0A
ID, Drain Current (A)
300
Limited By Package
200
100
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base
4
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May 19, 2015
IRFH6200TRPbF
4
ID = 50A
3
RDS(on), Drain-to -Source On Resistance (m
Ω)
3500
EAS , Single Pulse Avalanche Energy (mJ)
3000
2500
2000
1500
1000
500
0
ID
TOP
19A
21A
BOTTOM 30A
2
T J = 125°C
1
T J = 25°C
0
0
2
4
6
8
10
12
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
1000
Fig 13.
Maximum Avalanche Energy vs. Drain Current
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔTj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs. Pulsewidth
5
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2015 International Rectifier
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May 19, 2015
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