20,000
hFE, DC CURRENT GAIN
10,000
5000
2000
1000
500
200
100
50
0.01 0.02
0.05 0.1 0.2
0.5
1.0 2.0
IC, COLLECTOR CURRENT (AMP)
5.0
10
– 55°C
VCE = 3.0 Vdc
25°C
TJ = 150°C
hFE, SMALL–SIGNAL CURRENT GAIN
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
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MJ2500 MJ2501 MJ3000 MJ3001
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector Emitter Breakdown Voltage(1)
(IC = 100 mAdc, IB = 0)
MJ2500, MJ3000
MJ2501, MJ3001
V(BR)CEO
ICER
60
80
—
—
Vdc
Collector–Emitter Leakage Current
(VEB = 60 Vdc, RBE = 1.0 k ohm)
(VEB = 80 Vdc, RBE = 1.0 k ohm)
(VEB = 60 Vdc, RBE = 1.0 k ohm, TC = 150
_
C)
(VEB = 80 Vdc, RBE = 1.0 k ohm, TC = 150
_
C)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
mAdc
MJ2500, MJ3000
MJ2501, MJ3001
MJ2500, MJ3000
MJ2501, MJ3001
—
—
—
—
—
—
—
1.0
1.0
5.0
5.0
2.0
1.0
1.0
IEBO
mAdc
mAdc
Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
ON CHARACTERISTICS(1)
DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)
MJ2500, MJ3000
MJ2501, MJ3001
ICEO
hFE
1000
—
—
—
—
—
Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 20 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
VCE(sat)
VBE(on)
2.0
4.0
3.0
Vdc
Vdc
Base Emitter Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc)
(1)Pulse Test: Pulse Width
300
µs,
Duty Cycle
2.0%.
v
v
50,000
3000
2000
1000
500
300
200
100
50
TC = 25°C
VCE = 3.0 Vdc
IC = 5.0 Adc
30
103
104
105
f, FREQUENCY (Hz)
106
Figure 2. DC Current Gain
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.01 0.02
0.05
0.1
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
0.2
0.5
1.0
2.0
5.0
10
TJ = 25°C
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
Figure 3. Small–Signal Current Gain
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25°C
BONDING WIRE LIMITED
TJ = 200°C
0.1
1.0
2.0
3.0
5.0 7.0
MJ2500, MJ3000
MJ2501, MJ3001
10
20
30
50
70 100
IC, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. “On” Voltages
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown.
Safe operating area curves indicate IC – VCE limits of the
transistor that must be observed for reliable operation; e.g.,
the transistor must not be subjected to greater dissipation
2
Figure 5. DC Safe Operating Area
than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
Motorola Bipolar Power Transistor Device Data
MJ2500 MJ2501 MJ3000 MJ3001
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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4
◊
Motorola Bipolar Power Transistor Device Data
*MJ2500/D*
MJ2500/D
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