AUTOMOTIVE GRADE
Features
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AUIRFS8409-7P
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
40V
0.55m
Ω
0.75m
Ω
522A
240A
c
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of other
applications.
D
G
S
G
S
S
S
S
S
D
2
Pak 7 Pin
Applications
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Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
SMPS
G
D
S
Gate
Drain
Source
Ordering Information
Base part number
AUIRFS8409-7P
Package Type
D
2
Pak
7 Pin
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
800
800
AUIRFS8409-7P
AUIRFS8409-7TRL
AUIRFS8409-7TRR
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
ST G
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Single Pulse Avalanche Energy
Max.
Ãd
522
369
240
1200
375
2.5
± 20
-55 to + 175
300
764
1485
See Fig. 14, 15, 24a, 24b
l
Units
A
W
W/°C
V
°C
Avalanche Characteristics
E
AS (T hermally limited)
E
AS (tested)
I
AR
E
AR
e
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
d
Thermal Resistance
Symbol
R
θ
JC
R
θ
JA
d
Ãe
mJ
A
mJ
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount)
k
Typ.
Max.
0.4
40
Units
°C/W
j
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
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©
2013 International Rectifier
April 30, 2013
AUIRFS8409-7P
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
GS(th)
Drain-to-Source Leakage Current
I
DSS
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
R
G
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Q
gd
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
Turn-Off Delay Time
t
d(off)
t
f
Fall Time
C
iss
Input Capacitance
Output Capacitance
C
oss
C
rss
Reverse Transfer Capacitance
C
oss
eff. (ER) Effective Output Capacitance (Energy Related)
C
oss
eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
d
V
SD
Diode Forward Voltage
dv/dt
Peak Diode Recovery
f
t
rr
Reverse Recovery Time
Q
rr
I
RRM
Reverse Recovery Charge
Reverse Recovery Current
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Min.
176
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.026
0.55
3.0
–––
–––
–––
–––
2.2
Typ.
–––
305
84
96
209
32
148
149
107
13975
2140
1438
2620
3306
Typ.
–––
–––
0.8
1.6
50
58
59
72
2.2
Max.
–––
–––
0.75
3.9
1.0
150
100
-100
–––
Max.
–––
460
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
522
1200
l
1.2
–––
–––
–––
–––
–––
–––
Units
V
V/°C
mΩ
V
μA
nA
Ω
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 2mA
d
V
GS
= 10V, I
D
= 100A
Ãg
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Units
Conditions
S V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
DS
=20V
nC
V
GS
= 10V
g
I
D
= 100A, V
DS
=0V, V
GS
= 10V
V
DD
= 20V
I
D
= 100A
ns
R
G
= 2.7Ω
V
GS
= 10V
g
V
GS
= 0V
V
DS
= 25V
pF ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V,V
DS
=0V to 32V
i
, See Fig. 11
V
GS
= 0V, V
DS
= 0V to 32V
h
Units
Conditions
D
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C, I
S
= 100A, V
GS
= 0V
Ãg
V/ns T
J
= 175°C, I
S
= 100A, V
DS
= 40V
T
J
= 25°C
V
R
= 34V,
ns
T
J
= 125°C I
F
= 100A
di/dt = 100A/μs
g
T
J
= 25°C
nC
T
J
= 125°C
A T
J
= 25°C
G
S
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 240A by source
bonding technology. Note that current limitations arising from
heating of the device leads may occur with some lead mounting
arrangements.(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.153mH, R
G
= 50Ω,
I
AS
= 100A, V
GS
=10V. Part not recommended for use above
this value.
I
SD
≤
100A, di/dt
≤
1403A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
Pulse drain current is limited by source bonding technology.
2
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©
2013 International Rectifier
April 30, 2013
AUIRFS8409-7P
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
10
4.5V
1
100
4.5V
≤
60μs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤
60μs
PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
T J = 175°C
ID = 100A
VGS = 10V
1.6
10
T J = 25°C
1.2
1
VDS = 10V
≤60μs
PULSE WIDTH
0.1
2
3
4
5
6
7
8
0.8
0.4
-60
-20
20
60
100
140
180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
1000000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID = 100A
VDS= 32V
VDS= 20V
100000
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0
50
100 150 200 250 300 350 400
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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©
2013 International Rectifier
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
April 30, 2013
AUIRFS8409-7P
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100
T J = 175°C
ID, Drain-to-Source Current (A)
1000
100μsec
100
Limited by Package
10
TJ = 25°C
1msec
DC
10msec
10
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
600
500
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
48
Id = 2.0mA
47
46
45
44
43
42
41
40
-60
-20
20
60
100
140
180
T J , Temperature ( °C )
Limited By Package
400
300
200
100
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
2.5
3500
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10.
Drain-to-Source Breakdown Voltage
2.0
3000
2500
2000
1500
1000
500
0
ID
TOP
26A
52A
BOTTOM 100A
Energy (μJ)
1.5
1.0
0.5
0.0
-5
0
5
10 15 20 25 30 35 40 45
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
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©
2013 International Rectifier
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
April 30, 2013
AUIRFS8409-7P
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
0.001
0.0001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔTj
= 150°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs.Pulsewidth
800
700
EAR , Avalanche Energy (mJ)
600
500
400
300
200
100
0
25
50
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
ΔT
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
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©
2013 International Rectifier
April 30, 2013
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