Si4362BDY-T1-GE3 (Lead-(Pb)-free and Halogen-free)
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
• DC/DC Converters
• Synchronous Rectifiers
D
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
30
± 12
29
23
19.8
b, c
15.8
b, c
60
6
2.7
b, c
6.6
4.2
3.0
b, c
2
b, c
- 55 to 150
°C
W
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 73539
S09-0226-Rev. B, 09-Feb-09
www.vishay.com
1
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
34
15
Maximum
41
19
Unit
°C/W
Si4362BDY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5 A
0.7
35
30
18
17
T
C
= 25 °C
6
60
1.1
60
60
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 19.8 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 19.8 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
4800
500
200
75
36
9
6.5
1.05
26
11
41
7
12
10
47
8
1.6
40
20
65
15
20
15
70
15
ns
Ω
115
54
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 1 mA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 19.8 A
V
GS
= 4.5 V, I
D
= 18.2 A
V
DS
= 15 V, I
D
= 19.8 A
30
0.0038
0.0043
120
0.0046
0.0054
0.6
30
31.4
- 4.9
2.0
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73539
S09-0226-Rev. B, 09-Feb-09
Si4362BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
V
GS
= 5 V thru 10 V
50
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
I
D
= 25 °C
6
10
40
V
GS
= 4 V
30
4
I
D
= 125 °C
20
V
GS
= 3 V
V
GS
= 2 V
10
2
I
D
= - 55 °C
0.5
1.0
1.5
2.0
2.5
0
0.0
0.2
0.4
0.6
0.8
1.0
0
0.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.0046
6000
Transfer Characteristics
5000
R
DS(on)
- On-Resistance (mΩ)
0.0044
C - Capacitance (pF)
V
GS
= 4.5 V
0.0042
4000
C
iss
3000
0.0040
V
GS
= 10 V
0.0038
2000
C
oss
C
rss
1000
0.0036
0
10
20
30
40
50
60
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
V
G S
- Gate-to-Source Voltage (V)
I
D
= 19.8 A
8
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 15 V
1.8
I
D
= 19.8 A
1.6
Capacitance
1.4
V
GS
= 10 V , 4.5 V
1.2
6
4
V
DS
= 20 V
1.0
2
0.8
0
0
12
24
36
48
60
72
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73539
S09-0226-Rev. B, 09-Feb-09
On-Resistance vs. Junction Temperature
www.vishay.com
3
Si4362BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
R
DS (on)
- Drain-to-Source On-Resistance (Ω)
0.01
I
D
= 19.8 A
0.009
0.008
0.007
T
J
= 125 °C
0.006
0.005
0.004
T
J
= 25 °C
0.003
0.2
0.4
0.6
0.8
1.0
1
3
5
7
9
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
10
1
0.0
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
1.6
200
I
D
= 250 µA
On-Resistance vs. Gate-to-Source Voltage
1.4
160
V
GS(th)
(V)
1.2
1.0
Power (W)
120
80
0.8
40
0.6
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
10 s
DC
Single Pulse Power
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73539
S09-0226-Rev. B, 09-Feb-09
Si4362BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
8
7
30
I
D
- Drain Current (A)
Power (W)
6
5
4
3
10
2
1
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
20
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
