PROFET® BTS409L1
Smart High-Side Power Switch
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
V
bb(AZ)
V
bb(on)
R
ON
I
L(ISO)
I
L(SCr)
43
V
5.0 ... 34 V
200 m
2.3
A
4
A
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of
V
bb
protection
Electrostatic discharge
(ESD) protection
Green Product (RoHS compliant)
AEC Qualified
PG-TO263-5-2
Application
C
compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Fully protected by embedded protection
functions.
+ V bb
3
Voltage
source
V
Logic
Voltage
sensor
Overvoltage
protection
Current
limit
Gate
protection
2
IN
Charge
pump
Level
shifter
Rectifier
Limit for
unclampe
d
ind. loads
Open load
Short to Vbb
detection
OUT
Temperature
sensor
5
ESD
Logic
Load
4
ST
R
O
GND
PROFET
GND
1
Signal GND
Load GND
1
)
With external current limit (e.g. resistor R
GND
=150
)
in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Data Sheet
1
2013-10-10
BTS409L1
Pin
1
2
3
4
5
Symbol
GND
IN
Vbb
ST
OUT
(Load, L)
-
I
+
S
O
Function
Logic ground
Input, activates the power switch in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback, low on failure
Output to the load
Data Sheet
2
2013-10-10
BTS409L1
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for short circuit protection
T
j Start
=-40 ...+150°C
Load dump protection
2
)
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
3
)
= 2
,
R
L
= 5.3
,
t
d
= 200 ms, IN= low or high
Load current (Short circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
25 °C
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.
I
L
= 2.3 A, Z
L
= 98 mH, 0
:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Symbol
V
bb
V
bb
V
Load dump4
)
I
L
T
j
T
stg
P
tot
E
AS
V
ESD
V
IN
I
IN
I
ST
Values
43
34
60
self-limited
-40 ...+150
-55 ...+150
18
335
1.0
2.0
-10 ... +16
2.0
5.0
Unit
V
V
V
A
°C
W
mJ
kV
V
mA
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
Values
min
typ
max
--
--
7
--
--
75
39
Unit
K/W
chip - case:
R
thJC
junction - ambient (free air):
R
thJA
SMD version, device on PCB
5)
:
2
)
3)
4)
5
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150
resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the
protection of the input is integrated.
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
Data Sheet
3
2013-10-10
BTS409L1
Electrical Characteristics
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 1.8 A
T
j
=25 °C:
R
ON
--
1.8
I
L(ISO)
I
L(GNDhigh)
--
160
320
2.3
--
200
400
--
10
A
mA
s
m
T
j
=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V,
T
C
= 85 °C
Output current (pin
5
) while GND disconnected or
GND pulled up,
V
bb
=30 V,
V
IN
= 0, see diagram
page 8
Turn-on time
IN
to 90%
V
OUT
:
Turn-off time
IN
to 10%
V
OUT
:
R
L
= 12
,
T
j
=-40...+150°C
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
,
T
j
=-40...+150°C
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
,
T
j
=-40...+150°C
Operating Parameters
Operating voltage
6
)
Undervoltage shutdown
Undervoltage restart
t
on
t
off
dV /dt
on
-dV/dt
off
80
80
0.1
0.1
200
200
--
--
400
400
1
1
V/s
V/s
T
j
=-40...+150°C:
T
j
=-40...+150°C:
T
j
=-40...+25°C:
T
j
=+150°C:
Undervoltage restart of charge pump
see diagram page 12
T
j
=-40...+150°C:
Undervoltage hysteresis
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
Overvoltage shutdown
T
j
=-40...+150°C:
Overvoltage restart
T
j
=-40...+150°C:
Overvoltage hysteresis
T
j
=-40...+150°C:
Overvoltage protection
7
)
T
j
=-40...+150°C:
I
bb
=40 mA
Standby current (pin 3)
V
IN
=0
T
j
=-40...+25°C
:
T
j
= 150°C:
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
V
bb(under)
V
bb(over)
V
bb(o rst)
V
bb(over)
V
bb(AZ)
5.0
3.5
--
--
--
34
33
--
42
--
--
--
5.6
0.2
--
--
0.5
47
34
5.0
5.0
7.0
7.0
--
43
--
--
--
V
V
V
V
V
V
V
V
V
I
bb(off)
--
--
10
12
23
28
A
6)
7)
At supply voltage increase up to
V
bb
= 5.6 V typ without charge pump,
V
OUT
V
bb
- 2 V
See also
V
ON(CL)
in table of protection functions and circuit diagram page 8.
Data Sheet
4
2013-10-10
BTS409L1
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
--
--
--
1.8
12
3.5
Unit
A
mA
Leakage output current (included in
I
bb(off)
)
V
IN
=0
Operating current (Pin 1)
8)
,
V
IN
=5 V,
T
j
=-40...+150°C
Protection Functions
9)
Initial peak short circuit current limit (pin 3 to 5)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Repetitive short circuit shutdown current limit
T
j
=
T
jt
(see timing diagrams, page 10)
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
I
L
= 40 mA:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1)
10
)
Diagnostic Characteristics
Open load detection current
(on-condition)
I
L(off)
I
GND
I
L(SCp)
5.5
4.5
3
I
L(SCr)
--
V
ON(CL)
T
jt
T
jt
-V
bb
41
150
--
--
4
47
--
10
--
--
53
--
--
32
A
V
°C
K
V
9.5
7.5
5
13
11
7
A
T
j
=-40 °C
:
I
L (OL)
T
j
=25 ..150°C:
10
10
2
--
--
3
200
150
4
mA
V
Open load detection voltage
11
) (off-condition)
V
OUT(OL)
T
j
=-40..150°C:
Internal output pull down
(pin 5 to 1),
V
OUT
=5 V,
T
j
=-40..150°C
R
O
4
10
30
k
8
)
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
9
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10
) Requires 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
11)
External pull up resistor required for open load detection in off state.
Data Sheet
5
2013-10-10
求职招聘
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
