MMBT2369L, MMBT2369AL
Switching Transistors
NPN Silicon
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
Value
15
40
40
4.5
200
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
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SOT−23
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
1
556
mW
mW/°C
°C/W
Max
Unit
MARKING DIAGRAM
xxx M
G
G
xxx = M1J or 1JA
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
MMBT2369LT1G
SMMBT2369LT1G
MMBT2369ALT1G
SMMBT2369ALT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
3,000 /
Tape & Reel
3,000 /
Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
October, 2016 − Rev. 10
Publication Order Number:
MMBT2369LT1/D
MMBT2369L, MMBT2369AL
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I
C
= 10 mAdc, I
B
= 0)
Collector −Emitter Breakdown Voltage
(I
C
= 10
mAdc,
V
BE
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
(V
CB
= 20 Vdc, I
E
= 0, T
A
= 150°C)
Collector Cutoff Current
MMBT2369A (V
CE
= 20 Vdc, V
BE
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 3)
MMBT2369 (I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
MMBT2369A (I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
MMBT2369A (I
C
= 10 mAdc, V
CE
= 0.35 Vdc)
MMBT2369A (I
C
= 10 mAdc, V
CE
= 0.35 Vdc, T
A
= −55°C)
MMBT2369A (I
C
= 30 mAdc, V
CE
= 0.4 Vdc)
MMBT2369 (I
C
= 100 mAdc, V
CE
= 2.0 Vdc)
MMBT2369A (I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
Collector −Emitter Saturation Voltage (Note 3)
MMBT2369 (I
C
= 10 mAdc, I
B
= 1.0 mAdc)
MMBT2369A (I
C
= 10 mAdc, I
B
= 1.0 mAdc)
MMBT2369A (I
C
= 10 mAdc, I
B
= 1.0 mAdc, T
A
= +125°C)
MMBT2369A (I
C
= 30 mAdc, I
B
= 3.0 mAdc)
MMBT2369A (I
C
= 100 mAdc, I
B
= 10 mAdc)
Base −Emitter Saturation Voltage (Note 3)
MMBT2369/A (I
C
= 10 mAdc, I
B
= 1.0 mAdc)
MMBT2369A (I
C
= 10 mAdc, I
B
= 1.0 mAdc, T
A
= −55°C)
MMBT2369A (I
C
= 30 mAdc, I
B
= 3.0 mAdc)
MMBT2369A (I
C
= 100 mAdc, I
B
= 10 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Small Signal Current Gain
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Storage Time
(I
B1
= I
B2
= I
C
= 10 mAdc)
Turn−On Time
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc, I
B1
= 3.0 mAdc)
Turn−Off Time
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc, I
B1
= 3.0 mAdc, I
B2
= 1.5 mAdc)
t
s
−
t
on
−
t
off
−
10
18
8.0
12
ns
5.0
13
ns
ns
C
obo
−
h
fe
5.0
−
−
−
4.0
−
pF
h
FE
40
−
40
20
30
20
20
V
CE(sat)
−
−
−
−
−
V
BE(sat)
0.7
−
−
−
−
−
−
−
0.85
1.02
1.15
1.60
−
−
−
−
−
0.25
0.20
0.30
0.25
0.50
Vdc
−
−
−
−
−
−
−
120
120
−
−
−
−
−
Vdc
−
V
(BR)CEO
15
V
(BR)CES
40
V
(BR)CBO
40
V
(BR)EBO
4.5
I
CBO
−
−
I
CES
−
−
0.4
−
−
0.4
30
mAdc
−
−
mAdc
−
−
Vdc
−
−
Vdc
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
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2
MMBT2369L, MMBT2369AL
6
5
4
CAPACITANCE (pF)
3
C
ib
C
ob
T
J
= 25°C
LIMIT
TYPICAL
SWITCHING TIMES (nsec)
100
50
t
r
(V
CC
= 3 V)
t
f
t
r
10
5
t
s
V
CC
= 10 V
β
F
= 10
V
CC
= 10 V
V
OB
= 2 V
20
2
t
d
1
0.1
2
0.2
0.5
1.0
2.0
REVERSE BIAS (VOLTS)
5.0
10
1
2
5
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
Figure 6. Junction Capacitance Variations
Figure 7. Typical Switching Times
C < C
OPT
C
C
OPT
TIME
C=0
+6 V
0
-4 V
< 1 ns
t
1
10 V
980
500
C
s
* < 3 pF
PULSE WIDTH (t
1
) = 300 ns
DUTY CYCLE = 2%
Figure 8. Turn−Off Waveform
Figure 9. Storage Time Equivalent Test Circuit
VCE , MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
I
C
= 3 mA
0.6
I
C
= 10 mA
I
C
= 30 mA
I
C
= 50 mA
I
C
= 100 mA
0.8
0.4
0.2
0.02
0.05
0.1
0.2
0.5
1
I
B
, BASE CURRENT (mA)
2
5
10
20
Figure 10. Maximum Collector Saturation Voltage Characteristics
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MMBT2369L, MMBT2369AL
200
hFE, MINIMUM DC CURRENT GAIN
T
J
= 125°C
V
CE
= 1 V
100
75°C
25°C
T
J
= 25°C and 75°C
-15°C
50
-55°C
20
1
2
5
10
I
C
, COLLECTOR CURRENT (mA)
20
50
100
Figure 11. Minimum Current Gain Characteristics
1.4
V(sat) , SATURATION VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
0.4
0.2
β
F
= 10
T
J
= 25°C
MAX V
BE(sat)
MIN V
BE(sat)
MAX V
CE(sat)
1
2
5
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
Figure 12. Saturation Voltage Limits
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