INTEGRATED CIRCUITS
74ALVT16244
2.5V/3.3V 16-bit buffer/driver (3-State)
Product specification
Supersedes data of 1998 Feb 13
IC23 Data Handbook
1998 Oct 07
Philips
Semiconductors
Philips Semiconductors
Product specification
2.5V/3.3V 16-bit buffer/driver (3-State)
74ALVT16244
FEATURES
•
16-bit bus interface
•
5V I/O compatibile
•
3-State buffers
•
Output capability: +64mA/-32mA
•
TTL input and output switching levels
•
Input and output interface capability to systems at 5V supply
•
Bus-hold data inputs eliminate the need for external pull-up
•
Live insertion/extraction permitted
•
Power-up 3-State
•
No bus current loading when output is tied to 5V bus
•
Latch-up protection exceeds 500mA per JEDEC Std 17
•
ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model
resistors to hold unused inputs
DESCRIPTION
The 74ALVT16244 is a high-performance BiCMOS product
designed for V
CC
operation at 2.5V or 3.3V with I/O compatibility up
to 5V.
This device is a 16-bit buffer and line driver featuring non-inverting
3-State bus outputs. The device can be used as four 4-bit buffers,
two 8-bit buffers, or one 16-bit buffer.
QUICK REFERENCE DATA
SYMBOL
t
PLH
t
PHL
C
IN
C
Out
I
CCZ
PARAMETER
Propagation delay
nAx to nYx
Input capacitance DIR, OE
Output capacitance
Total supply current
C
L
= 50pF
V
I
= 0V or V
CC
V
I/O
= 0V or V
CC
Outputs disabled
CONDITIONS
T
amb
= 25°C
TYPICAL
2.5V
1.8
1.9
3
9
40
3.3V
1.5
1.5
3
9
70
UNIT
ns
pF
pF
µA
ORDERING INFORMATION
PACKAGES
48-Pin Plastic SSOP Type III
48-Pin Plastic TSSOP Type II
TEMPERATURE RANGE
–40°C to +85°C
–40°C to +85°C
OUTSIDE NORTH AMERICA
74ALVT16244 DL
74ALVT16244 DGG
NORTH AMERICA
AV16244 DL
AV16244 DGG
DWG NUMBER
SOT370-1
SOT362-1
LOGIC SYMBOL
47
46
44
43
1
41
40
38
37
48
1A0
1A1
1A2
1A3
1OE
2A0
2A1
2A2
2A3
2OE
2Y0
2Y1
2Y2
2Y3
1Y0
1Y1
1Y2
1Y3
2
3
5
6
36
35
33
32
25
8
9
11
12
30
29
27
26
24
3A0
3A1
3A2
3A3
3OE
4A0
4A1
4A2
4A3
4OE
4Y0
4Y1
4Y2
4Y3
3Y0
3Y1
3Y2
3Y3
13
14
16
17
LOGIC SYMBOL (IEEE/IEC)
1OE
2OE
3OE
4OE
1A1
1A2
1A3
19
20
22
23
1A4
2A1
2A2
2A3
2A4
3A1
3A2
3A3
1
48
25
24
47
46
44
43
41
1
40
38
37
36
35
33
32
30
29
27
26
1
4
∇
1
3
∇
2
∇
EN1
EN2
EN3
EN4
1
1
∇
2
3
5
6
8
9
11
12
13
14
16
17
19
20
22
23
1Y1
1Y2
1Y3
1Y4
2Y1
2Y2
2Y3
2Y4
3Y1
3Y2
3Y3
3Y4
4Y1
4Y2
4Y3
4Y4
SA00014
3A4
4A1
4A2
4A3
4A4
SA00019
1998 Oct 07
2
853-1838 20144
Philips Semiconductors
Product specification
2.5V/3.3V 16-bit buffer/driver (3-State)
74ALVT16244
PIN CONFIGURATION
PIN DESCRIPTION
1OE
1Y0
1Y1
GND
1Y2
1Y3
V
CC
2Y0
2Y1
GND
2Y2
2Y3
3Y0
3Y1
GND
3Y2
3Y4
V
CC
4Y0
4Y1
GND
4Y2
4Y3
4OE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
2OE
1A0
1A1
GND
1A2
1A3
V
CC
2A0
2A1
GND
2A2
2A3
3A0
3A1
GND
3A2
3A3
V
CC
4A0
4A1
GND
4A2
4A3
3OE
PIN NUMBER
47, 46, 44, 43
41, 40, 38, 37
36, 35, 33, 32
30, 29, 27, 26
2, 3, 5, 6
8, 9, 11, 12
13, 14, 16, 17
19, 20, 22, 23
1, 48
25, 24
4, 10, 15, 21
28, 34, 39, 45
7, 18, 31, 42
SYMBOL
1A0 - 1A3,
2A0 - 2A3,
3A0 - 3A3,
4A0 - 4A3
1Y0 - 1Y3,
2Y0 - 2Y3,
3Y0 - 3Y3,
4Y0 - 4Y3
1OE, 2OE,
3OE, 4OE
GND
V
CC
NAME AND FUNCTION
Data inputs
Data outputs
Output enables
Ground (0V)
Positive supply voltage
FUNCTION TABLE
INPUTS
nOE
L
L
H
H
L
X
Z
= High voltage level
= Low voltage level
= Don’t care
= High Impedance “off” state
nAx
L
H
X
OUTPUTS
nYx
L
H
Z
SA00013
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
I
OUT
T
stg
PARAMETER
DC supply voltage
DC input diode current
DC input voltage
3
DC output diode current
DC output voltage
3
DC output current
out ut
Storage temperature range
V
O
< 0
Output in Off or High state
Output in Low state
Output in High state
V
I
< 0
CONDITIONS
RATING
-0.5 to +4.6
-50
-0.5 to +7.0
-50
-0.5 to +7.0
128
-64
-65 to +150
UNIT
V
mA
V
mA
V
mA
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
1998 Oct 07
3
Philips Semiconductors
Product specification
2.5V/3.3V 16-bit buffer/driver (3-State)
74ALVT16244
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
V
I
V
IH
V
IL
I
OH
I
OL
∆t/∆v
T
amb
DC supply voltage
Input voltage
High-level input voltage
Input voltage
High-level output current
Low-level output current
Low-level output current; current duty cycle
≤
50%; f
≥
1kHz
Input transition rise or fall rate; Outputs enabled
Operating free-air temperature range
–40
PARAMETER
2.5V RANGE LIMITS
MIN
2.3
0
1.7
0.7
–8
8
24
10
+85
–40
MAX
2.7
5.5
3.3V RANGE LIMITS
MIN
3.0
0
2.0
0.8
–32
32
64
10
+85
MAX
3.6
5.5
UNIT
V
V
V
V
mA
mA
ns/V
°C
DC ELECTRICAL CHARACTERISTICS (3.3V
"0.3V
RANGE)
LIMITS
SYMBOL
V
IK
V
OH
PARAMETER
Input clamp voltage
High-level out ut voltage
output
TEST CONDITIONS
V
CC
= 3.0V; I
IK
= –18mA
V
CC
= 3.0 to 3.6V; I
OH
= –100µA
V
CC
= 3.0V; I
OH
= –32mA
V
CC
= 3.0V; I
OL
= 100µA
V
OL
Low–level out ut voltage
output
V
CC
= 3.0V; I
OL
= 16mA
V
CC
= 3.0V; I
OL
= 32mA
V
CC
= 3.0V; I
OL
= 64mA
V
CC
= 3.6V; V
I
= V
CC
or GND
I
I
In ut
Input leakage current
V
CC
= 0 or 3.6V; V
I
= 5.5V
V
CC
= 3.6V; V
I
= V
CC
V
CC
= 3.6V; V
I
= 0V
I
OFF
I
HOLD
Off current
Bus Hold current
Data inputs
6
Current into an output in the
High state when V
O
> V
CC
Power up/down 3-State output
current
3
3-State output High current
3-State output Low current
Quiescent supply current
Additional supply current per
input pin
2
V
CC
= 0V; V
I
or V
O
= 0 to 4.5V
V
CC
= 3V; V
I
= 0.8V
V
CC
= 3V; V
I
= 2.0V
V
CC
= 0V to 3.6V; V
CC
= 3.6V
V
O
= 5.5V; V
CC
= 3.0V
V
CC
≤
1.2V; V
O
= 0.5V to V
CC
; V
I
= GND or V
CC
OE/OE = Don’t care
V
CC
= 3.6V; V
O
= 3.0V; V
I
= V
IL
or V
IH
V
CC
= 3.6V; V
O
= 0.5V; V
I
= V
IL
or V
IH
V
CC
= 3.6V; Outputs High, V
I
= GND or V
CC,
I
O
= 0
V
CC
= 3.6V; Outputs Low, V
I
= GND or V
CC,
I
O
= 0
V
CC
= 3.6V; Outputs Disabled; V
I
= GND or V
CC,
I
O
= 0
5
V
CC
= 3V to 3.6V; One input at V
CC
–0.6V,
Other inputs at V
CC
or GND
75
–75
±500
10
1
0.5
0.5
0.05
3.6
0.06
0.04
125
±100
5
–5
0.1
5
0.1
0.4
mA
mA
µA
µA
µA
µA
Data
pins
4
ins
Control pins
V
CC
–0.2
2.0
Temp = -40°C to +85°C
MIN
TYP
1
–0.85
V
CC
2.3
0.07
0.25
0.3
0.4
0.1
01.
0.5
0.1
0.1
130
–140
µA
0.2
0.4
0.5
0.55
±1
10
1
-5
±100
µA
µA
V
MAX
–1.2
V
V
UNIT
I
EX
I
PU/PD
I
OZH
I
OZL
I
CCH
I
CCL
I
CCZ
∆I
CC
NOTES:
1. All typical values are at V
CC
= 3.3V and T
amb
= 25°C.
2. This is the increase in supply current for each input at the specified voltage level other than V
CC
or GND
3. This parameter is valid for any V
CC
between 0V and 1.2V with a transition time of up to 10msec. From V
CC
= 1.2V to V
CC
= 3.3V
±
0.3V a
transition time of 100µsec is permitted. This parameter is valid for T
amb
= 25°C only.
4. Unused pins at V
CC
or GND.
5. I
CCZ
is measured with outputs pulled up to V
CC
or pulled down to ground.
6. This is the bus hold overdrive current required to force the input to the opposite logic state.
1998 Oct 07
4
Philips Semiconductors
Product specification
2.5V/3.3V 16-bit buffer/driver (3-State)
74ALVT16244
AC CHARACTERISTICS (3.3V
"0.3V
RANGE)
GND = 0V; t
R
= t
F
= 2.5ns; C
L
= 50pF; R
L
= 500Ω; T
amb
= –40°C to +85°C.
LIMITS
SYMBOL
PARAMETER
WAVEFORM
MIN
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
Propagation delay
nAx to nYx
Output enable time
to High and Low level
Output disable time
from High and Low Level
1
2
2
0.8
0.8
1.0
0.5
1.5
1.5
V
CC
= 3.3V
"0.3V
TYP
1
1.5
1.5
2.3
1.8
2.7
2.3
MAX
2.4
2.5
3.8
2.9
4.2
3.6
ns
ns
ns
UNIT
NOTE:
1. All typical values are at V
CC
= 3.3V and T
amb
= 25°C.
DC ELECTRICAL CHARACTERISTICS (2.5V
"0.2V
RANGE)
LIMITS
SYMBOL
V
IK
V
OH
V
OL
PARAMETER
Input clamp voltage
High-level out ut voltage
output
Low-level out ut voltage
output
TEST CONDITIONS
V
CC
= 2.3V; I
IK
= –18mA
V
CC
= 2.3 to 2.7V; I
OH
= –100µA
V
CC
= 2.3V; I
OH
= –8mA
V
CC
= 2.3V; I
OL
= 100µA
V
CC
= 2.3V; I
OL
= 24mA
V
CC
= 2.7V; V
I
= V
CC
or GND
I
I
In ut
Input leakage current
V
CC
= 0 or 2.7V; V
I
= 5.5V
V
CC
= 2.7V; V
I
= V
CC
V
CC
= 2.7V; V
I
= 0
I
OFF
I
HOLD
I
EX
I
PU/PD
I
OZH
I
OZL
I
CCH
I
CCL
I
CCZ
∆I
CC
Additional supply current per
input pin
2
Quiescent supply current
Off current
Bus Hold current
Data
inputs
6
Current into an output in the
High state when V
O
> V
CC
Power up/down 3-State output
current
3
3-State output High current
3-State output Low current
V
CC
= 0V; V
I
or V
O
= 0 to 4.5V
V
CC
= 2.3V; V
I
= 0.7V
V
CC
= 2.3V; V
I
= 1.7V
V
O
= 5.5V; V
CC
= 2.3V
V
CC
≤
1.2V; V
O
= 0.5V to V
CC
; V
I
= GND or V
CC
;
OE/OE = Don’t care
V
CC
= 2.7V; V
O
= 2.3V; V
I
= V
IL
or V
IH
V
CC
= 2.7V; V
O
= 0.5V; V
I
= V
IL
or V
IH
V
CC
= 2.7V; Outputs High, V
I
= GND or V
CC,
I
O
= 0
V
CC
= 2.7V; Outputs Low, V
I
= GND or V
CC,
I
O
= 0
V
CC
= 2.7V; Outputs Disabled; V
I
= GND or V
CC,
I
O
= 0
5
V
CC
= 2.3V to 2.7V; One input at V
CC
–0.6V,
Other inputs at V
CC
or GND
Data pins
4
ins
Control pins
V
CC
–0.2
1.8
Temp = -40°C to +85°C
MIN
TYP
1
–0.85
V
CC
2.5
0.07
0.3
0.1
0.1
0.1
0.1
0.1
115
–10
10
1
0.5
0.5
0.04
2.5
0.04
0.04
125
±100
5
–5
0.1
4.5
0.1
0.4
mA
mA
0.2
0.5
±1
10
1
-5
±100
µA
µA
µA
µA
µA
µA
µA
MAX
–1.2
V
V
UNIT
NOTES:
1. All typical values are at V
CC
= 2.5V and T
amb
= 25°C.
2. This is the increase in supply current for each input at the specified voltage level other than V
CC
or GND
3. This parameter is valid for any V
CC
between 0V and 1.2V with a transition time of up to 10msec. From V
CC
= 1.2V to V
CC
= 2.5V
±
0.2V a
transition time of 100µsec is permitted. This parameter is valid for T
amb
= 25°C only.
4. Unused pins at V
CC
or GND.
5. I
CCZ
is measured with outputs pulled up to V
CC
or pulled down to ground.
6. Not guaranteed.
1998 Oct 07
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
