NTB125N02R, NTP125N02R
Power MOSFET
125 A, 24 V N−Channel
TO−220, D
2
PAK
Features
•
Planar HD3e Process for Fast Switching Performance
•
Body Diode for Low t
rr
and Q
rr
and Optimized for Synchronous
•
•
•
•
Operation
Low C
iss
to Minimize Driver Loss
Optimized Q
gd
and R
DS(on)
for Shoot−through Protection
Low Gate Charge
Pb−Free Packages are Available
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125 AMPERES, 24 VOLTS
R
DS(on)
= 3.7 mW (Typ)
D
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ T
C
= 25°C
Drain Current −
Continuous @ T
C
= 25°C, Chip
Continuous @ T
C
= 25°C, Limited by Package
Continuous @ T
A
= 25°C, Limited by Wires
Single Pulse (t
p
= 10
ms)
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 50 V
dc
, V
GS
= 10 V
dc
, I
L
= 15.5 A
pk
,
L = 1 mH, R
G
= 25
W)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
Symbol
V
DSS
V
GS
R
qJC
P
D
I
D
I
D
I
D
I
D
R
qJA
P
D
I
D
R
qJA
P
D
I
D
T
J
, T
stg
E
AS
Value
24
±20
1.1
113.6
125
120.5
95
250
46
2.72
18.6
63
1.98
15.9
−55 to
150
120
Unit
V
dc
V
dc
°C/W
W
A
A
A
A
°C/W
W
A
°C/W
W
A
°C
4
mJ
1
°C
125N2x
x
A
Y
WW
G
= Device Code
=R
= Assembly Location
= Year
= Work Week
= Pb−Free Package
2
3
T
L
260
D
2
PAK
CASE 418AA
STYLE 2
125N2G
AYWW
1
2
4
S
G
MARKING
DIAGRAMS
TO−220AB
CASE 221A
STYLE 5
125N2RG
AYWW
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
PIN ASSIGNMENT
PIN
1
2
3
4
FUNCTION
Gate
Drain
Source
Drain
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 7
Publication Order Number:
NTB125N02R/D
NTB125N02R, NTP125N02R
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C Unless otherwise specified)
Characteristics
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 V
dc
, I
D
= 250
mA
dc
)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
)
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
, T
J
= 125°C)
Gate−Body Leakage Current
(V
GS
=
±20
V
dc
, V
DS
= 0 V
dc
)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
mA
dc
)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 V
dc
, I
D
= 110 A
dc
)
(V
GS
= 4.5 V
dc
, I
D
= 55 A
dc
)
(V
GS
= 10 V
dc
, I
D
= 20 A
dc
)
(V
GS
= 4.5 V
dc
, I
D
= 20 A
dc
)
Forward Transconductance (Note 3)
(V
DS
= 10 V
dc
, I
D
= 15 A
dc
)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
GS
= 4.5 V
dc
, I
D
= 40 A
dc
,
V
DS
= 10 V
dc
) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 20 A
dc
, V
GS
= 0 V
dc
) (Note 3)
(I
S
= 55 A
dc
, V
GS
= 0 V
dc
)
(I
S
= 20 A
dc
, V
GS
= 0 V
dc
, T
J
= 125°C)
V
SD
−
−
−
−
−
−
−
0.82
0.99
0.65
36.5
17.7
18.8
0.024
1.2
−
−
−
−
−
−
mC
V
dc
(V
GS
= 10 V
dc
, V
DD
= 10 V
dc
,
I
D
= 40 A
dc
, R
G
= 3
W)
t
d(on)
t
r
t
d(off)
tf
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
11
39
27
21
23.6
5.1
11
22
80
40
40
28
−
−
nC
ns
(V
DS
= 20 V
dc
, V
GS
= 0 V, f = 1 MHz)
C
iss
C
oss
C
rss
−
−
−
2710
1105
227
3440
1670
640
pF
V
GS(th)
1.0
−
R
DS(on)
−
−
−
−
g
FS
−
44
−
3.7
4.9
3.7
4.7
−
−
4.6
6.2
Mhos
1.5
5.0
2.0
−
V
dc
mV/°C
mW
V
(BR)DSS
25
−
I
DSS
−
−
I
GSS
−
−
−
−
1.5
10
±100
28
15
−
−
V
dc
mV/°C
mA
dc
Symbol
Min
Typ
Max
Unit
nA
dc
Reverse Recovery Time
(I
S
= 30 A
dc
, V
GS
= 0 V
dc
,
dI
S
/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
t
rr
t
a
t
b
Q
RR
ns
ORDERING INFORMATION
Device
NTP125N02R
NTP125N02RG
NTB125N02R
NTB125N02RG
NTB125N02RT4
NTB125N02RT4G
Package
TO−220AB
TO−220AB
(Pb−Free)
D
2
PAK
D
2
PAK
(Pb−Free)
D
2
PAK
D
2
PAK
(Pb−Free)
Shipping
†
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
800 Units / Tape & Reel
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NTB125N02R, NTP125N02R
200
4.0 V
I
D
, DRAIN CURRENT (AMPS)
160
4.5 V
5.0 V
6.0 V
8.0 V
10 V
I
D
, DRAIN CURRENT (AMPS)
3.5 V
200
V
DS
≥
10 V
160
120
3.0 V
120
80
V
GS
= 2.5 V
40
0
0
2
4
6
8
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
80
T
J
= 125°C
T
J
= 25°C
40
0
0
0.8
T
J
= −55°C
1.6
2.4
3.2
4.0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.01
V
GS
= 10 V
0.008
T
J
= 125°C
0.006
T
J
= 25°C
0.004
T
J
= −55°C
0.002
0
40
80
120
160
200
I
D
, DRAIN CURRENT (AMPS)
0.01
V
GS
= 4.5 V
0.008
T
J
= 125°C
0.006
T
J
= 25°C
0.004
T
J
= −55°C
0.002
0
40
80
120
160
200
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
0
I
D
= 55 A
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
10,000
100,000
Figure 4. On−Resistance versus Drain Current
and Temperature
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
1000
T
J
= 100°C
100
4.0
8.0
12
16
20
24
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
http://onsemi.com
3
NTB125N02R, NTP125N02R
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
7000
6000
C, CAPACITANCE (pF)
5000
4000
3000
2000
C
rss
C
iss
V
DS
= 0 V V
GS
= 0 V
10
8.0
V
GS
6.0
Q
T
Q
1
Q
2
I
D
= 40 A
T
J
= 25°C
0
8
16
24
32
40
48
C
iss
4.0
C
oss
1000
0
10
T
J
= 25°C
5
V
GS
0
V
DS
5
10
15
C
rss
20
2.0
0
Q
g
, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
60
I
S
, SOURCE CURRENT (AMPS)
1000
V
DS
= 10 V
I
D
= 40 A
V
GS
= 10 V
t, TIME (ns)
50
40
30
20
10
0
V
GS
= 0 V
T
J
= 25°C
100
t
r
t
d(off)
t
f
10
1
t
d(on)
10
R
G
, GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1000
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
100
Figure 10. Diode Forward Voltage versus
Current
100
ms
1 ms
10
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1.0
10
10 ms
dc
1.0
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
NTB125N02R, NTP125N02R
1
EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED)
Normalized to R
qJC
at Steady State
0.1
r(t),
0.01
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
Figure 12. Thermal Response
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5
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