MJD122
MJD127
Complementary power Darlington transistors
Features
■
■
Low collector-emitter saturation voltage
Integrated antiparallel collector-emitter diode
Applications
3
■
General purpose linear and switching
1
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage.
DPAK
Figure 1.
Internal schematic diagrams
NPN: R
1
= 7 KΩ
R
2
= 70
Ω
PNP: R
1
= 16 KΩ
R
2
= 60
Ω
Table 1.
Device summary
Marking
MJD122
MJD127
Polarity
NPN
DPAK
Tape and reel
PNP
Package
Packaging
Order codes
MJD122T4
MJD127T4
April 2009
Doc ID 3541 Rev 11
1/12
www.st.com
12
Content
MJD122, MJD127
Content
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
4
5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Doc ID 3541 Rev 11
MJD122, MJD127
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
TOT
T
stg
T
J
Absolute maximum ratings
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current
Base current
Total dissipation at T
case
= 25°C
Storage temperature
Max. operating junction temperature
Value
100
100
5
8
16
0.12
20
-65 to 150
150
Unit
V
V
V
A
A
A
W
°C
°C
Note:
For PNP types voltage and current values are negative.
Table 3.
Symbol
R
thj-c
Thermal data
Parameter
Thermal resistance junction-case max.
Value
6.25
Unit
°C/W
Doc ID 3541 Rev 11
3/12
Electrical characteristics
MJD122, MJD127
2
Electrical characteristics
(T
case
=
25 °C; unless otherwise specified)
Table 4.
Symbol
I
CBO
I
CEO
I
EBO
Electrical characteristics
Parameter
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Test conditions
V
CB
= 100 V
V
CE
= 50 V
V
EB
= 5 V
100
_
I
B
= 16 mA
_
I
B
= 80 mA
_
I
B
= 80 mA
_
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
1000
100
Min.
Typ.
-
Max.
10
Unit
µA
µA
mA
V
2
4
4.5
2.8
12000
V
V
V
V
-
10
-
-
2
Collector-emitter
V
CEO(sus) (1)
sustaining voltage (I = 0) I
C
= 30 mA
B
V
CE(sat)(1)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
Base-emitter on voltage
DC current gain
I
C
= 4 A
I
C
= 8 A
I
C
= 8 A
I
C
= 4 A
I
C
= 4A
I
C
= 8 A
-
-
-
-
V
BE(sat)(1)
V
BE(on)(1)
h
FE (1)
1. Pulsed duration = 300 µs, duty cycle
≤
1.5%
Note:
For PNP types voltage and current values are negative.
4/12
Doc ID 3541 Rev 11
MJD122, MJD127
Electrical characteristics
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area
Figure 3.
Derating curve
Figure 4.
DC current gain for NPN type
AM00696v1
Figure 5.
DC current gain for PNP type
AM00697v1
h
FE
h
FE
1000
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
100
V
CE
=
3
V
1000
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
V
CE
= -3 V
100
10
0.01
0.1
1
Ic(A)
10
-0.01
-0.1
-1
Ic(A)
Figure 6.
Collector-emitter saturation voltage Figure 7.
for NPN type
AM00698v1
Collector-emitter saturation voltage
for PNP type
AM00699v1
V
CE(sat)
(V)
h
FE
= 250
1.4
V
CE(sat)
(V)
h
FE
= 250
-1.4
1
-1
0.6
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
1
Ic(A)
-0.6
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
-1
Ic(A)
0.2
0.1
-0.2
-0.1
Doc ID 3541 Rev 11
5/12
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