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MJD44E3T4

产品描述NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
产品类别分立半导体    晶体管   
文件大小53KB,共4页
制造商Motorola ( NXP )
官网地址https://www.nxp.com
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MJD44E3T4概述

NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS

MJD44E3T4规格参数

参数名称属性值
厂商名称Motorola ( NXP )
包装说明SMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknow
ECCN代码EAR99
外壳连接COLLECTOR
最大集电极电流 (IC)10 A
集电极-发射极最大电压80 V
配置DARLINGTON
最小直流电流增益 (hFE)1000
JESD-30 代码R-PSSO-G2
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON

文档预览

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD44E3/D
MJD44E3*
Darlington Power Transistor
DPAK For Surface Mount Application
. . . for general purpose power and switching output or driver stages in applications
such as switching regulators, converters, and power amplifiers.
Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount (“T4” Suffix)
Electrically Similar to Popular D44E3 Device
High DC Gain — 1000 Min @ 5.0 Adc
Low Sat. Voltage — 1.5 V @ 5.0 Adc
Compatible With Existing Automatic Pick & Place Equipment
*Motorola Preferred Device
NPN DARLINGTON
SILICON
POWER TRANSISTOR
10 AMPERES
80 VOLTS
20 WATTS
0.243
6.172
0.063
1.6
inches
mm
Preferred
devices are Motorola recommended choices for future use and best overall value.
©
Motorola, Inc. 1997
Motorola Bipolar Power Device Data
0.118
3.0
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MAXIMUM RATINGS
Rating
Symbol
VCEO
VEB
IC
Value
80
7
Unit
Vdc
Vdc
Adc
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
10
PD
20
0.16
Watts
W/
_
C
Watts
W/
_
C
Total Power Dissipation (1)
@ TA = 25
_
C
Derate above 25
_
C
PD
1.75
0.014
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to + 150
CASE 369–07
CASE 369A–13
_
C
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.190
4.826
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJC
R
θJA
TL
Max
Unit
Thermal Resistance, Junction to Case
6.25
71.4
260
_
C/W
_
C/W
_
C
Thermal Resistance, Junction to Ambient (1)
Lead Temperature for Soldering
0.07
1.8
(1) These ratings are applicable when surface mounted on the minimum pad size recommended.
0.165
4.191
1

MJD44E3T4相似产品对比

MJD44E3T4 MJD44E3-1 MJD44E3 MJD44
描述 NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
厂商名称 Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) -
包装说明 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2 -
Reach Compliance Code unknow unknow unknow -
外壳连接 COLLECTOR COLLECTOR COLLECTOR -
最大集电极电流 (IC) 10 A 10 A 10 A -
集电极-发射极最大电压 80 V 80 V 80 V -
配置 DARLINGTON DARLINGTON DARLINGTON -
最小直流电流增益 (hFE) 1000 1000 1000 -
JESD-30 代码 R-PSSO-G2 R-PSFM-T3 R-PSSO-G2 -
元件数量 1 1 1 -
端子数量 2 3 2 -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 SMALL OUTLINE FLANGE MOUNT SMALL OUTLINE -
极性/信道类型 NPN NPN NPN -
认证状态 Not Qualified Not Qualified Not Qualified -
表面贴装 YES NO YES -
端子形式 GULL WING THROUGH-HOLE GULL WING -
端子位置 SINGLE SINGLE SINGLE -
晶体管应用 SWITCHING SWITCHING SWITCHING -
晶体管元件材料 SILICON SILICON SILICON -
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