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MJD45H11

产品描述8 A, 80 V, PNP, Si, POWER TRANSISTOR
产品类别分立半导体    晶体管   
文件大小40KB,共5页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
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MJD45H11概述

8 A, 80 V, PNP, Si, POWER TRANSISTOR

8 A, 80 V, PNP, 硅, 功率晶体管

MJD45H11规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Fairchild
零件包装代码TO-252
包装说明SMALL OUTLINE, R-PSSO-G2
针数3
Reach Compliance Codecompli
ECCN代码EAR99

文档预览

下载PDF文档
MJD45H11
MJD45H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK: “-I” Suffix)
Electrically Similar to Popular MJE45H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
- 80
-5
-8
- 16
20
1.75
150
- 55 ~ 150
Units
V
V
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
*Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Capacitance
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= - 30mA, I
B
= 0
V
CE
= - 80V, I
B
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 1V, I
C
= - 4A
I
C
= - 8A, I
B
= - 0.4A
I
C
= - 8A, I
B
= - 0.8A
V
CE
= - 10A, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
I
C
= - 5A
I
B1
= - I
B2
= - 0.5A
40
230
135
500
100
60
40
-1
- 1.5
V
V
MHz
pF
ns
ns
ns
Min.
- 80
Typ.
Max.
- 10
- 50
Units
V
µA
µA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2003 Fairchild Semiconductor Corporation
Rev. C2, July 2003

MJD45H11相似产品对比

MJD45H11 MJD45H11TM
描述 8 A, 80 V, PNP, Si, POWER TRANSISTOR 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252
是否Rohs认证 不符合 符合
零件包装代码 TO-252 DPAK
包装说明 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
针数 3 3
Reach Compliance Code compli _compli
ECCN代码 EAR99 EAR99

 
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