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MJD45H11

产品描述8 A, 80 V, PNP, Si, POWER TRANSISTOR
产品类别分立半导体    晶体管   
文件大小107KB,共6页
制造商Motorola ( NXP )
官网地址https://www.nxp.com
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MJD45H11概述

8 A, 80 V, PNP, Si, POWER TRANSISTOR

8 A, 80 V, PNP, 硅, 功率晶体管

MJD45H11规格参数

参数名称属性值
厂商名称Motorola ( NXP )
包装说明SMALL OUTLINE, R-PDSO-G2
Reach Compliance Codeunknow
外壳连接COLLECTOR
最大集电极电流 (IC)8 A
集电极-发射极最大电压80 V
配置SINGLE
最小直流电流增益 (hFE)40
JESD-30 代码R-PDSO-G2
JESD-609代码e0
元件数量1
端子数量2
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型PNP
功耗环境最大值20 W
最大功率耗散 (Abs)20 W
认证状态Not Qualified
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)40 MHz
最大关闭时间(toff)640 ns
VCEsat-Max1 V

文档预览

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD44H11/D
Complementary Power
Transistors
MJD44H11 *
PNP
MJD45H11 *
*Motorola Preferred Device
NPN
DPAK For Surface Mount Applications
. . . for general purpose power and switching such as output or driver stages in
applications such as switching regulators, converters, and power amplifiers.
Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount (“T4” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage — VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
0.243
6.172
0.063
1.6
inches
mm
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
0.118
3.0
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MAXIMUM RATINGS
Rating
Symbol
VCEO
VEB
IC
D44H11 or D45H11
80
5
Unit
Vdc
Vdc
Adc
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Peak
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
8
16
PD
20
0.16
Watts
W/
_
C
Watts
W/
_
C
Total Power Dissipation (1)
@ TA = 25
_
C
Derate above 25
_
C
PD
1.75
0.014
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to 150
CASE 369A–13
CASE 369–07
_
C
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.190
4.826
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJC
R
θJA
TL
Max
Unit
Thermal Resistance, Junction to Case
6.25
71.4
260
_
C/W
_
C/W
_
C
Thermal Resistance, Junction to Ambient (1)
Lead Temperature for Soldering
(1) These ratings are applicable when surface mounted on the minimum pad size recommended.
0.07
1.8
0.165
4.191
1

MJD45H11相似产品对比

MJD45H11 MJD45H11T4 MJD44H11T4 MJD44H11-1 MJD44H11
描述 8 A, 80 V, PNP, Si, POWER TRANSISTOR 8 A, 80 V, PNP, Si, POWER TRANSISTOR 8 A, 80 V, NPN, Si, POWER TRANSISTOR 8 A, 80 V, PNP, Si, POWER TRANSISTOR POWER TRANSISTOR
厂商名称 Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
包装说明 SMALL OUTLINE, R-PDSO-G2 SMALL OUTLINE, R-PDSO-G2 SMALL OUTLINE, R-PDSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PDSO-G2
Reach Compliance Code unknow unknow unknow unknow unknow
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 8 A 8 A 8 A 8 A 8 A
集电极-发射极最大电压 80 V 80 V 80 V 80 V 80 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 40 40 40 40 40
JESD-30 代码 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PSIP-T3 R-PDSO-G2
JESD-609代码 e0 e0 e0 e0 e0
元件数量 1 1 1 1 1
端子数量 2 2 2 3 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE SMALL OUTLINE
极性/信道类型 PNP PNP NPN NPN NPN
功耗环境最大值 20 W 20 W 20 W 20 W 20 W
最大功率耗散 (Abs) 20 W 20 W 20 W 20 W 20 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES NO YES
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING GULL WING THROUGH-HOLE GULL WING
端子位置 DUAL DUAL DUAL SINGLE DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 40 MHz 40 MHz 50 MHz 50 MHz 50 MHz
最大关闭时间(toff) 640 ns 640 ns 640 ns 640 ns 640 ns
VCEsat-Max 1 V 1 V 1 V 1 V 1 V
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