HEXFET
®
Power MOSFET
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
High Cdv/dt Immunity
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount
Techniques
l
IRF6603
Qg(typ.)
48nC
PD - 94364F
V
DSS
30V
R
DS(on)
max
3.4mΩ@V
GS
= 10V
5.5mΩ@V
GS
= 4.5V
MT
MX
MT
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
SQ
SX
ST
MQ
Description
The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6603 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6603 has been optimized for parameters that are critical in synchronous buck
converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6603 offers particularly low Rds(on) and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Max.
Units
V
A
Continuous Drain Current, V
GS
@ 10V
f
Power Dissipation
f
Power Dissipation
i
Power Dissipation
c
f
@ 10V
f
@ 10V
i
30
+20/-12
27
22
92
200
3.6
2.3
42
0.029
-40 to + 150
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
fj
Junction-to-Ambient
gj
Junction-to-Ambient
hj
Junction-to-Case
ij
Junction-to-Ambient
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
35
–––
–––
3.0
–––
Units
°C/W
Junction-to-PCB Mounted
Notes
through
are on page 11
www.irf.com
1
12/22/05
IRF6603
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆TJ
I
DSS
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Min. Typ. Max. Units
30
–––
–––
–––
1.4
–––
–––
–––
–––
–––
28
2.4
3.9
–––
-6.3
–––
–––
–––
–––
–––
–––
48
15.6
5.2
16.1
11.1
21.3
28
1.0
20
9.9
24
71
6590
1250
520
–––
–––
3.4
5.5
2.5
–––
30
50
100
100
-100
–––
72
–––
–––
–––
–––
–––
–––
2.0
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ns
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 20A
S
nA
V
mV/°C
µA
µA
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 25A
V
GS
= 4.5V, I
D
mV/°C Reference to 25°C, I
D
= 1mA
e
= 20A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 70°C
V
GS
= 20V
V
GS
= -12V
V
DS
= 15V, I
D
= 20A
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
56
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
Clamped Inductive Load
Ãe
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Typ.
–––
–––
–––
Max.
49
20
4.1
Units
mJ
A
mJ
Repetitive Avalanche Energy
–––
–––
–––
–––
–––
–––
–––
1.0
45
60
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
38
A
200
1.3
68
90
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A
di/dt = 100A/µs
e
2
e
www.irf.com
IRF6603
10000
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
1000
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
100
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
10
1
10
0.1
2.7V
2.7V
0.01
0.1
1
20µs PULSE WIDTH
Tj = 25°C
10
100
20µs PULSE WIDTH
Tj = 150°C
10
100
1
0.1
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
2.0
I
D
= 25A
ID, Drain-to-Source Current
(Α
)
R
DS(on)
, Drain-to-Source On Resistance
100.00
T J = 150°C
1.5
10.00
(Normalized)
1.0
1.00
T J = 25°C
VDS = 15V
20µs PULSE WIDTH
2.0
3.0
4.0
5.0
6.0
0.5
0.10
0.0
-60
-40
-20
0
20
40
60
80
100
V
GS
= 10V
120
140
160
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF6603
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
6.0
ID= 20A
VGS, Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
0
10
VDS= 15V
C, Capacitance(pF)
10000
Ciss
Coss
1000
Crss
100
1
10
100
20
30
40
50
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
100
I
SD
, Reverse Drain Current (A)
10
T
J
= 150
°
C
10
100µsec
1msec
1
T
J
= 25
°
C
1
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
10
10msec
0.1
0.2
0.5
0.7
1.0
V
GS
= 0 V
1.2
1.5
0.1
V
SD
,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF6603
100
2.5
80
ID, Drain Current (A)
VGS(th) Gate threshold Voltage (V)
90
2.0
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
1.5
ID = 250µA
1.0
0.5
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
(Z
thJA
)
D = 0.50
10
0.20
0.10
0.05
Thermal Response
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
A
10
100
J
= P
DM
x Z
thJA
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
MEMS传感器
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