21TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
FEATURES
•
•
•
•
•
•
•
•
•
•
175 °C high performance Schottky diode
Very low forward voltage drop
Extremely low reverse leakage
Optimized V
F
vs. I
R
trade off for high efficiency
Cathode to
base 2
RoHS
COMPLIANT
TO-220AB
Anode 1
Anode 3
Increased ruggedness for reverse avalanche capability
RBSOA available
Negligible switching losses
Submicron trench technology
Full lead (Pb)-free and RoHS compliant devices
Designed and qualified for industrial level
APPLICATIONS
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at 20 A at 125 °C
20 A
100 V
0.68 V
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•
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High efficiency SMPS
Automotive
High frequency switching
Output rectification
Reverse battery protection
Freewheeling
Dc-to-dc systems
Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
V
F
T
J
20 Apk, T
J
= 125 °C (typical, per leg)
Range
CHARACTERISTICS
VALUES
100
0.65
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V
R
TEST CONDITIONS
T
J
= 25 °C
21TT100
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
at T
J
= 175 °C
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
E
AS
I
AR
TEST CONDITIONS
50 % duty cycle at T
C
= 142 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
T
J
= 25 °C, I
AS
= 1.5 A, L = 60 mH
Limited by frequency of operation and time pulse duration so
that T
J
< T
J
max. I
AS
at T
J
max. as a function of time pulse
See fig. 8
Following any rated
load condition and with
rated V
RRM
applied
VALUES
20
660
220
67.5
I
AS
at
T
J
max.
mJ
A
A
UNITS
Document Number: 94404
Revision: 05-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
21TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
20 A
Forward voltage drop
V
FM (1)
40 A
20 A
40 A
Reverse leakage current
Junction capacitance
Series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
TYP.
-
-
-
-
-
-
850
8.0
-
MAX.
0.80
0.95
0.68
0.82
150
6
-
-
10 000
µA
mA
pF
nH
V/µs
V
UNITS
V
R
= Rated V
R
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-220AB
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 175
2
°C/W
0.5
2
0.07
6 (5)
12 (10)
21TT100
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94404
Revision: 05-Sep-08
21TT100
High Performance
Vishay High Power Products
Schottky Generation 5.0, 20 A
100
Reverse Current - I
R
(mA)
100
175°C
10
150°C
125°C
1
0.1
0.01
25°C
0.001
0.0001
0
10 20 30 40 50 60 70 80 90 100
100°C
75°C
50°C
Tj = 175°C
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
10
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Tj = 25°C
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
100
0
20
40
60
80
100
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Junction Capacitance - C
T
(pF)
Tj = 125°C
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single Pulse
(Thermal Resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (Seconds)
1
10
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94404
Revision: 05-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
21TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
20
180
Allowable Case Temperature (°C)
Average Power Loss - (Watts)
160
DC
15
180°
120°
90°
60°
30°
140
10
RMS Limit
DC
120
Square wave (D=0.50)
80% rated Vr applied
see note (1)
5
100
0
5
10
15
20
25
30
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
0
0
5
10
15
20
25
30
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - I
FSM
(A)
1000
100
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
(1)
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94404
Revision: 05-Sep-08
21TT100
High Performance
Vishay High Power Products
Schottky Generation 5.0, 20 A
100
Avalanche Current (A)
Tj = 25°C
10
Tj = 125°C
1
Tj = 175°C
0.1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
Avalanche Energy (mJ)
10
Tj = 25°C
Tj = 125°C
Tj = 175°C
1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Document Number: 94404
Revision: 05-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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