d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 74253
S09-0392-Rev. B, 09-Mar-09
www.vishay.com
1
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typ
35
19
Max
41
24
Unit
°C/W
Si4334DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On -State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 4 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 2 A
0.35
26
16
12.5
13.5
T
C
= 25 °C
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1645
310
110
30.5
14
3.1
3.5
2.4
17
52
26
7
9
31
30
7
3.6
26
78
39
12
15
48
45
12
4.3
40
0.4
40
25
ns
Ω
46
21
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 8 A
V
DS
= 15 V, I
D
= 10 A
20
0.0112
0.0132
34
0.0135
0.0160
0.14
22
30
0.6
1.7
± 100
1
100
V
V
nA
mA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode and Schottky Characteristics
A
V
ns
nC
ns
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74253
S09-0392-Rev. B, 09-Mar-09
Si4334DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
2.0
I
D
– Drain C
u
rrent (A)
VGS=
10 thru 3
V
30
I
D
– Drain C
u
rrent (A)
40
1.6
1.2
T
C
= 125 °C
0.8
T
C
= 25 °C
20
10
2
V
0.4
T
C
= - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.0
0.6
1.2
1.8
2.4
3.0
V
DS
– Drain-to-Source
Voltage
(V)
V
GS
– Gate-to-Source
Voltage
(V)
Output Characteristics
0.015
2200
Transfer Characteristics
R
DS(on)
– On-Resistance (Ω)
0.014
C – Capacitance (pF)
V
GS
= 4.5
V
1760
C
iss
1320
0.013
0.012
880
0.011
V
GS
= 10
V
440
C
oss
C
rss
0
4
8
12
16
20
0.010
0
10
20
30
40
50
0
I
D
– Drain Current (A)
V
DS
– Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 10 A
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
= 15
V
8
R
DS(on)
– On-Resistance
1.5
1.7
I
D
= 10 A
Capacitance
V
GS
= 4.5
V
(
N
ormalized)
1.3
6
V
DS
= 10
V
4
V
DS
= 20
V
2
1.1
V
GS
= 10
V
0.9
0
0.0
6.2
12.4
18.6
24.8
31.0
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74253
S09-0392-Rev. B, 09-Mar-09
www.vishay.com
3
Si4334DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
R
DS(on)
– Drain-to-So
u
rce On-Resistance (Ω)
0.10
I
D
= 10 A
0.08
T
J
= 150 °C
I
S
- So
u
rce C
u
rrent (A)
10
0.06
T
J
= 25 °C
1
0.04
T
A
= 125 °C
0.02
T
A
= 25 °C
0.00
0
2
4
6
8
10
0.1
0.0
0.2
0.4
0.6
0.8
1
1.2
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
– Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1
200
On-Resistance vs. Gate-to-Source Voltage
0.1
I
R
- Reverse (A)
30
V
0.01
Po
w
er (
W
)
20
V
160
120
0.001
80
0.0001
40
0.00001
0
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
0.000001
Reverse Current (Schottky)
100
Junction-to-Ambient
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
1 ms
10 ms
1
100 ms
1s
10 s
dc
T
A
= 25 °C
Single Pulse
0.1
*
V
GS
1
100
10
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
0.1
0.01
Safe Operating Area
www.vishay.com
4
Document Number: 74253
S09-0392-Rev. B, 09-Mar-09
Si4334DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
16
13
I
D
- Drain Current (A)
10
6
3
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
7.0
2.0
5.6
1.6
Po
w
er (
W
)
4.2
Po
w
er (
W
)
0
25
50
75
100
125
150
1.2
2.8
0.8
1.4
0.4
0.0
0.0
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
T
A
– Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
