BC856A-BC858C
PNP SMALL SIGNAL TRANSISTOR IN SOT23
Features
Ideally Suited for Automatic Insertion
Complementary NPN Types: BC846 – BC848
For Switching and AF Amplifier Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
SOT23
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Notes 4 & 5)
Product
BC856A-7-F
BC856AQ-7-F
BC856B-7-F
BC856BQ-7-F
BC856B-13-F
BC856BQ-13-F
BC857A-7-F
Notes:
Compliance
AEC-Q101
Automotive
AEC-Q101
Automotive
AEC-Q101
Automotive
AEC-Q101
Marking
K3A
K3A
K3B
K3B
K3B
K3B
K3A
Reel Size
(inches)
7
7
7
7
13
13
7
Quantity
per Reel
3,000
3,000
3,000
3,000
10,000
10,000
3,000
Product
BC857B-7-F
BC857BQ-7-F
BC857B-13-F
BC857C-7-F
BC857C-13-F
BC858A-7-F
BC858B-7-F
BC858C-7-F
Compliance
AEC-Q101
Automotive
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
Marking
K3B
K3B
K3B
K3G
K3G
K3A
K3B
K3G
Reel Size
(inches)
7
7
13
7
13
7
7
7
Quantity
per Reel
3,000
3,000
10,000
3,000
10,000
3,000
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. Tape width is 8mm. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
xxx = Product Type Marking Code
(Please see Ordering Information)
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)
xxx
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
Feb
2
2011
Y
Mar
3
2012
Z
Apr
4
May
5
YM
2013
A
Jun
6
2014
B
Jul
7
Aug
8
2015
C
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
BC856A – BC858C
Document Number: DS11207 Rev. 24 - 2
1 of 7
www.diodes.com
October 2014
© Diodes Incorporated
BC856A-BC858C
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
BC856
BC857
BC858
BC856
BC857
BC858
Symbol
V
CBO
Value
-80
-50
-30
-65
-45
-30
-5.0
-100
-200
-200
-200
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Emitter Current
Peak Base Current
V
CEO
V
EBO
I
C
I
CM
I
EM
I
BM
V
V
mA
mA
mA
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
310
350
403
357
350
-65 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings
(Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 15 mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BC856A – BC858C
Document Number: DS11207 Rev. 24 - 2
2 of 7
www.diodes.com
October 2014
© Diodes Incorporated
BC856A-BC858C
Thermal Characteristics and Derating Information
0.4
400
Max Power Dissipation (W)
Thermal Resistance (°C/W)
350
300
250
200
150
100
50
0
100µ
1m
10m 100m
D=0.2
D=0.5
D=0.1
Single Pulse
D=0.05
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
1
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
10
Single Pulse. T
amb
=25°C
Transient Thermal Impedance
Max Power Dissipation (W)
1
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
BC856A – BC858C
Document Number: DS11207 Rev. 24 - 2
3 of 7
www.diodes.com
October 2014
© Diodes Incorporated
BC856A-BC858C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
BC856
BC857
BC858
BC856A / BC857A / BC858A
BC856B / BC857B / BC858B
BC857C / BC858C
BC856A / BC857A / BC858A
BC856B / BC857B / BC858B
BC857C / BC858C
BC856A / BC857A / BC858A
BC856B / BC857B / BC858B
BC857C / BC858C
BC856A / BC857A / BC858A
BC856B / BC857B / BC858B
BC857C / BC858C
BC856A / BC857A / BC858A
BC856B / BC857B / BC858B
BC857C / BC858C
BC856
BC857
BC858
BC856
BC857
BC858
Symbol
BV
CBO
Min
-80
-50
-30
-65
-45
-30
-5
—
—
—
—
Typ
—
Max
—
Unit
V
Test Condition
I
C
= -10µA
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
h
fe
—
—
—
—
—
200
330
600
2.7
4.5
8.7
18
30
60
1.5x10
-4
2x10
-4
3x10
-4
180
290
520
-75
-250
-650
—
-700
-850
3
200
2
—
—
-15
-4
-15
-15
-15
-100
—
V
V
nA
µA
nA
nA
—
I
C
= -10mA
I
E
= -1µA
V
CB
= -30V
V
CB
= -30V, T
J
= +150°C
V
CE
= -80V
V
CE
= -50V
V
CE
= -30V
V
EB
= -5V
Collector Emitter Cutoff Current
Emitter-Base Cutoff Current
Small Signal Current Gain
(Note 10)
Input Impedance (Note 10)
Output Admittance
(Note 10)
Reverse Voltage Transfer
Ratio (Note 10)
DC Current Gain (Note 10)
h
ie
—
—
kΩ
I
C
= -2.0mA, V
CE
= -5V
f = 1.0kHz
h
oe
—
—
µS
h
re
—
125
220
420
—
-600
—
—
—
100
—
—
250
475
800
-300
-650
-750
-820
—
-1100
—
—
10
—
h
FE
V
CE(sat)
V
BE(on)
V
BE(sat)
C
obo
f
T
NF
—
mV
mV
mV
pF
MHz
dB
I
C
= -2.0mA, V
CE
= -5V
I
C
= - 10mA, I
B
= -0.5mA
I
C
= - 100mA, I
B
= -5.0mA
I
C
= -2mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
V
CB
= -10V, f = 1.0MHz
V
CE
= -5V, I
C
= -10mA,
f = 100MHz
V
CE
= -5V, I
C
= -200µA
R
S
= 2kΩ, f = 1kHz
∆f = 200Hz
Collector-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10)
Output Capacitance
Transition Frequency
Noise Figure
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
BC856A – BC858C
Document Number: DS11207 Rev. 24 - 2
4 of 7
www.diodes.com
October 2014
© Diodes Incorporated
BC856A-BC858C
Typical Electrical Characteristics
1,000
T
A
= 150°C
(@T
A
= +25°C, unless otherwise specified.)
0.5
V
CE
= 5V
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
I
C
I
B
= 10
0.4
h
FE
, DC CURRENT GAIN
100
T
A
= 25°C
T
A
= -50°C
0.3
0.2
T
A
= 150°C
T
A
= 25°C
10
0.1
T
A
= -50°C
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
1
0
0.1
1,000
10
100
1
I
C
, COLLECTOR CURRENT (mA)
Figure 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1,000
f
t
, GAIN-BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
100
10
100
10
I
C
, COLLECTOR CURRENT (mA)
Figure 3 Gain-Bandwidth Product vs Collector Current
1
BC856A – BC858C
Document Number: DS11207 Rev. 24 - 2
5 of 7
www.diodes.com
October 2014
© Diodes Incorporated
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
