MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MJE13007/D
Designer's Data Sheet
SWITCHMODE
™
MJE13007
MJF13007
POWER TRANSISTOR
8.0 AMPERES
400 VOLTS
80/40 WATTS
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF13007 is designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V
switchmode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
•
•
•
•
•
•
VCEO(sus) 400 V
Reverse Bias SOA with Inductive Loads @ TC = 100°C
700 V Blocking Capability
SOA and Switching Applications Information
Two Package Choices: Standard TO–220 or Isolated TO–220
MJF13007 is UL Recognized to 3500 VRMS, File #E69369
MAXIMUM RATINGS
Rating
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current
— Peak (1)
Base Current — Continuous
Base Current
— Peak (1)
Emitter Current — Continuous
Emitter Current
— Peak (1)
RMS Isolation Voltage
(for 1 sec, R.H. < 30%, TA = 25°C)
Test No. 1 Per Fig. 15
Test No. 2 Per Fig. 16
Test No. 3 Per Fig. 17
Proper strike and creepage distance must
be provided
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature
Symbol
VCEO
VCES
VEBO
IC
ICM
IB
IBM
IE
IEM
VISOL
—
—
—
4500
3500
1500
MJE13007
MJF13007
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
V
CASE 221A–06
TO–220AB
MJE13007
400
700
9.0
8.0
16
4.0
8.0
12
24
PD
TJ, Tstg
80
0.64
40*
0.32
Watts
W/°C
°C
– 65 to 150
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
R
θJC
R
θJA
TL
°1.56°
°62.5°
260
°3.12°
°62.5°
°C/W
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
MJF13007
°C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
≤
10%.
*Measurement made with thermocouple contacting the bottom insulated mountign surface of the
*package
(in a location beneath the die), the device mounted on a heatsink with thermal grease applied
*at
a mounting torque of 6 to 8•lbs.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
MJE13007 MJF13007
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
Collector Cutoff Current
(VCES = 700 Vdc)
(VCES = 700 Vdc, TC = 125°C)
Emitter Cutoff Current
(VEB = 9.0 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
*ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 2.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
Base–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Collector to Heatsink Capacitance, MJF13007
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Voltage Storage Time
Crossover Time
Fall Time
* Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
VCC = 15 Vdc, IC = 5.0 A
Vclamp = 300 Vdc
IB(on) = 1.0 A, IB(off) = 2.5 A
LC = 200
µH
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
tsv
tc
tfi
—
—
—
—
—
—
1.2
1.6
0.15
0.21
0.04
0.10
2.0
3.0
0.30
0.50
0.12
0.20
µs
µs
µs
(VCC = 125 Vdc, IC = 5.0 A,
IB1 = IB2 = 1.0 A, tp = 25
µs,
Duty Cycle
≤
1.0%)
td
tr
ts
tf
—
—
—
—
0.025
0.5
1.8
0.23
0.1
1.5
3.0
0.7
µs
fT
Cob
Cc–hs
4.0
—
—
14
80
3.0
—
—
—
MHz
pF
pF
hFE
8.0
5.0
VCE(sat)
—
—
—
—
VBE(sat)
—
—
—
—
—
—
1.2
1.6
1.5
—
—
—
—
1.0
2.0
3.0
3.0
Vdc
—
—
40
30
Vdc
—
IS/b
—
See Figure 6
See Figure 7
VCEO(sus)
ICES
—
—
IEBO
—
—
—
—
0.1
1.0
100
µAdc
400
—
—
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
2
Motorola Bipolar Power Transistor Device Data
MJE13007 MJF13007
1.4
VBE(sat), BASE–EMITTER SATURATION
VOLTAGE (VOLTS)
IC/IB = 5
1.2
VCE(sat), COLLECTOR–EMITTER SATURATION
VOLTAGE (VOLTS)
10
5
2
1
0.5
0.2
0.1
0.05
TC = – 40°C
25°C
100°C
0.05
0.1
0.2
0.5
1
2
5
10
IC/IB = 5
1
TC = – 40°C
25°C
0.6
100°C
0.8
0.4
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.02
0.01
0.01 0.02
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Base–Emitter Saturation Voltage
Figure 2. Collector–Emitter Saturation Voltage
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
3
2.5
2
1.5
1
0.5
0
0.01 0.02
IC = 1 A
IC = 5 A
IC = 3 A
IC = 8 A
TJ = 25°C
0.05
0.1
0.2
0.5
1
2
3
5
10
IB, BASE CURRENT (AMPS)
Figure 3. Collector Saturation Region
100
10000
Cib
C, CAPACITANCE (pF)
1000
TJ = 25°C
TJ = 100°C
hFE , DC CURRENT GAIN
25°C
10
40°C
Cob
100
VCE = 5 V
1
0.01
0.1
1
10
10
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (AMPS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. DC Current Gain
Figure 5. Capacitance
Motorola Bipolar Power Transistor Device Data
3
MJE13007 MJF13007
100
50
IC, COLLECTOR CURRENT (AMPS)
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
TC = 25°C
DC
5 ms
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED VCEO
10
Extended SOA @ 1
µs,
10
µs
IC, COLLECTOR CURRENT (AMPS)
1
µs
10
µs
1 ms
8
6
4
TC
≤
100°C
GAIN
≥
4
LC = 500
µH
VBE(off)
–5 V
0V
–2 V
100
200
300
400
500
600
700
800
VCEV, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS)
2
0
1000
0
10
20 30
50 70 100
200 300
500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Maximum Forward Bias
Safe Operating Area
Figure 7. Maximum Reverse Bias Switching
Safe Operating Area
1
0.8
SECOND BREAKDOWN
DERATING
0.6
THERMAL
DERATING
0.4
0.2
0
20
40
60
80
100
120
140
160
TC, CASE TEMPERATURE (°C)
Figure 8. Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC — VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TC = 25°C; TJ(pk) is vari-
able depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when T C
≥
25°C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 6 may be found at any case tem-
perature by using the appropriate curve on Figure 8.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by second breakdown.
Use of reverse biased safe operating area data (Figure 7)
is discussed in the applications information section.
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
POWER DERATING FACTOR
1
0.7
0.5
D = 0.5
D = 0.2
0.2
0.1
0.07
0.05
D = 0.1
D = 0.05
D = 0.02
t1
t2
DUTY CYCLE, D = t1/t2
0.1
0.2
0.5
1
2
5
t, TIME (msec)
10
20
50
P(pk)
R
θJC
(t) = r(t) R
θJC
R
θJC
= 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC
(t)
100
200
500
10 k
0.02
D = 0.01
SINGLE PULSE
0.02
0.05
0.01
0.01
Figure 9. Typical Thermal Response for MJE13007
4
Motorola Bipolar Power Transistor Device Data
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MJE13007 MJF13007
1
0.5
0.3
0.2
D = 0.1
0.1
0.05
0.03
0.02
0.01
0.01
D = 0.05
SINGLE PULSE
t1
t2
DUTY CYCLE, D = t1/t2
P(pk)
R
θJC
(t) = r(t) R
θJC
R
θJC
= 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC
(t)
D = 0.5
D = 0.2
0.02
0.05
0.1
0.2 0.3 0.5
1
2 3
5
10
20 30 50
100 200 300 500
t, TIME (msec)
1K
2K 3K 5K
10K 20K 30K 50K 100K
Figure 10. Typical Thermal Response for MJF13007
SPECIFICATION INFORMATION FOR SWITCHMODE APPLICATIONS
INTRODUCTION
The primary considerations when selecting a power
transistor for SWITCHMODE applications are voltage and
current ratings, switching speed, and energy handling
capability. In this section, these specifications will be
discussed and related to the circuit examples illustrated in
Table 2.(1)
VOLTAGE REQUIREMENTS
Both blocking voltage and sustaining voltage are important
in SWITCHMODE applications.
Circuits B and C in Table 2 illustrate applications that
require high blocking voltage capability. In both circuits the
switching transistor is subjected to voltages substantially
higher than VCC after the device is completely off (see load
line diagrams at IC = Ileakage
≈
0 in Table 2). The blocking
capability at this point depends on the base to emitter
conditions and the device junction temperature. Since the
highest device capability occurs when the base to emitter
junction is reverse biased (VCEV), this is the recommended
and specified use condition. Maximum ICEV at rated VCEV is
specified at a relatively low reverse bias (1.5 Volts) both at
25°C and 100°C. Increasing the reverse bias will give some
improvement in device blocking capability.
The sustaining or active region voltage requirements in
switching applications occur during turn–on and turn–off. If
the load contains a significant capacitive component, high
current and voltage can exist simultaneously during turn–on
and the pulsed forward bias SOA curves (Figure 6) are the
proper design limits.
For inductive loads, high voltage and current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as a Reverse Bias Safe Operating Area
(Figure 7) which represents voltage–current conditions that
can be sustained during reverse biased turn–off. This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
(1) For detailed information on specific switching applications, see
(1)
Motorola Application Note AN719, AN873, AN875, AN951.
Motorola Bipolar Power Transistor Device Data
5
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