MOSFET 80V N-Ch PWR FET 9000pF 130nC 214A
参数名称 | 属性值 |
产品种类 Product Category | MOSFET |
制造商 Manufacturer | Toshiba(东芝) |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | Through Hole |
封装 / 箱体 Package / Case | TO-220-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 80 V |
Id - Continuous Drain Current | 214 A |
Rds On - Drain-Source Resistance | 3.2 mOhms |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 130 nC |
Configuration | Single |
高度 Height | 15.1 mm |
长度 Length | 10.16 mm |
Factory Pack Quantityevtruuwdvuzyffecdczev | 50 |
Transistor Type | 1 N-Channel |
宽度 Width | 4.45 mm |
单位重量 Unit Weight | 0.211644 oz |
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