NVMFS5113PL
Power MOSFET
−60 V, 14 mW, −64 A, Single P−Channel
Features
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
NVMFS5113PLWF − Wettable Flanks Product
NVM Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
qJC
(Notes 1, 2, 3)
Power Dissipation R
qJC
(Notes 1, 2)
Continuous Drain Cur-
rent R
qJA
(Notes 1, 2, 3)
Power Dissipation R
qJA
(Notes 1, 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
−60
"20
−64
−45
150
75
−10
−7
3.8
1.9
−415
−55 to
175
−150
315
A
°C
A
mJ
W
A
W
Unit
V
V
A
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V
(BR)DSS
−60 V
R
DS(on)
14 mW @ −10 V
22 mW @ −4.5 V
I
D
−64 A
S (1, 2, 3)
G (4)
P−Channel
D (5, 6)
MARKING
DIAGRAM
D
1
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 46 A, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN5
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
XXXXXX
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
T
L
260
°C
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State (Drain)
(Note 2)
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
1.0
39
Unit
°C/W
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2015
1
November, 2015 − Rev. 3
Publication Order Number:
NVMFS5113PL/D
NVMFS5113PL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
I
DSS
V
GS
= 0 V, I
D
= −250
mA
V
GS
= 0 V,
V
DS
= −60 V
T
J
= 25°C
T
J
= 125°C
−60
−1.0
−100
"100
nA
V
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
"20
V
V
GS(TH)
R
DS(on)
V
GS
= V
DS
, I
D
= −250
mA
V
GS
= −10 V, I
D
= −17 A
V
GS
= −4.5 V, I
D
= −5 A
−1.5
10.5
16
43
−2.5
14
22
V
mW
Froward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
g
FS
V
DS
= −15 V, I
D
= −15 A
S
C
iss
C
oss
C
rss
Q
G(TOT)
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −25 V
4400
505
319
pF
V
DS
= −48 V,
I
D
= −17 A
V
GS
= −4.5 V
V
GS
= −10 V
45
83
4
nC
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
GS
Q
GD
V
GP
V
GS
= −10 V, V
DS
= −48 V,
I
D
= −17 A
13
27
3.5
V
SWITCHING CHARACTERISTICS
(Notes 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
GS
= −10 V, V
DS
= −48 V,
I
D
= −17 A, R
G
= 2.5
W
15
37
54
77
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= −17 A
T
J
= 25°C
T
J
= 125°C
−0.79
−0.65
41
V
GS
= 0 V, dl
s
/dt = 100 A/ms,
I
s
= −17 A
22
19
50
nC
ns
−1.0
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
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2
NVMFS5113PL
TYPICAL CHARACTERISTICS
60.0
T
J
= 25°C
−I
D
, DRAIN CURRENT (A)
−I
D
, DRAIN CURRENT (A)
50.0
−6 V to −10 V
40.0
30.0
20.0
10.0
−3.2 V
0.0
0.0
V
GS
= −2.8 V
1.0
2.0
3.0
4.0
5.0
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−3.6 V
−4.0 V
120.0
110.0
100.0
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
1
2
3
4
5
6
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
V
DS
= −10 V
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.020
I
D
= −17 A
T
J
= 25°C
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0
10
20
30
40
50
V
GS
= −10 V
60
70
80
90 100
−I
D
, DRAIN CURRENT (A)
V
GS
= −4.5 V
T
J
= 25°C
0.018
0.016
0.014
0.012
0.010
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.10
V
GS
= −10 V
2.00
I
D
= −17 A
1.90
1.80
1.70
1.60
1.50
1.40
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
−50 −25
0
100000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
−I
DSS
, LEAKAGE (nA)
T
J
= 150°C
10000
T
J
= 125°C
1000
100
25
50
75
100
125
150
175
10
20
30
40
50
60
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVMFS5113PL
TYPICAL CHARACTERISTICS
6000
5000
C, CAPACITANCE (pF)
4000
3000
2000
1000
0
C
rss
0
10
20
30
40
50
60
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
30
40
50
60
V
DS
= −48 A
I
D
= −17 A
T
J
= 25°C
70
80
90
Q
g
, TOTAL GATE CHARGE (nC)
Q
gs
Q
gd
Q
T
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−to−Source Voltage vs. Total
Charge
120
−I
S
, SOURCE CURRENT (A)
t
d(off)
t
f
t
r
110
100
90
80
70
60
50
40
30
20
10
0
100
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
V
GS
= 0 V
T
J
= 25°C
1000.0
100.0
t, TIME (ns)
t
d(on)
10.0
V
DD
= −48 V
V
GS
= −10 V
I
D
= −17 A
1
10
R
G
, GATE RESISTANCE (W)
1.0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
V
GS
≤
−10 V
Single Pulse
T
C
= 25°C
10 ms
1 ms
100
ms
10
ms
I
PEAK
, DRAIN CURRENT (A)
100
Figure 10. Diode Forward Voltage vs. Current
−I
D
, DRAIN CURRENT (A)
100
T
J(initial)
= 25°C
10
dc
1
10
T
J(initial)
= 125°C
0.1
0.01
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
100
1
1.00E−05
1.00E−04
1.00E−03
1.00E−02
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
AV
, TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Avalanche Characteristics
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NVMFS5113PL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
10
0.2
R
qJA(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.1
0.05
1 0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
NVMFS5113PLT1G
NVMFS5113PLWFT1G
Marking
V5113L
5113LW
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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