AUTOMOTIVE GRADE
Features
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AUIRF7343Q
HEXFET
®
Power MOSFET
N-Ch
D1
D1
D2
D2
Advanced Planar Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified*
Lead-Free,
RoHS Compliant
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
6
5
P-Ch
-55V
V
(BR)DSS
R
DS(on)
typ.
55V
0.043Ω 0.095Ω
P-CHANNEL MOSFET
max. 0.050
Ω
0.105
Ω
I
D
4.7A
-3.4A
Top View
Description
Specifically designed for Automotive applications, these HEXFET
®
Power MOSFET's in a Dual SO-8 package utilize the lastest
processing techniques to achieve extremely low on-resistance
per silicon area. Additional features of these Automotive qualified
HEXFET Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal in
a variety of power applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also available in Tape &
Reel.
Base Part Number
AUIRF7343Q
Package Type
SO-8
SO-8
G
D
S
G ate
D rain
Source
Standard Pack
Form
Tube
Tape and Reel
Quantity
95
4000
Orderable Part Number
AUIRF7343Q
AUIRF7343QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless
otherwise specified.
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
I
AR
E
AR
V
GS
dv/dt
T
J
T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
N-Channel
55
4.7
3.8
38
2.0
1.3
72
4.7
0.20
± 20
5.0
-55 to + 150
-5.0
114
-3.4
Units
P-Channel
-55
-3.4
-2.7
-27
V
A
W
mJ
A
mJ
V
V/ns
°C
g
g
c
e
d
Thermal Resistance
R
θJA
Junction-to-Ambient
g
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
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©
2014 International Rectifier
Submit Datasheet Feedback
March 10, 2014
AUIRF7343Q
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
R
DS(on)
Static Drain-to-Source On-Resistance
P-Ch
V
GS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
55
-55
–––
–––
–––
–––
–––
–––
1.0
-1.0
7.9
3.3
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.059
0.054
0.043
0.056
0.095
0.150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.050
0.065
0.105
0.170
–––
–––
–––
–––
2.0
-2.0
25
-25
± 100
V
Conditions
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= 1mA
V/°C
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 4.7A
V
GS
= 4.5V, I
D
= 3.8A
Ω
V
GS
= -10V, I
D
= -3.4A
V
GS
= -4.5V, I
D
= -2.7A
V
DS
= V
GS
, I
D
= 250μA
V
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 10V, I
D
= 4.5A
S
V
DS
= -10V, I
D
= -3.1A
V
DS
= 55V, V
GS
= 0V
V
DS
= -55V, V
GS
= 0V
μA
V
DS
= 55V, V
GS
= 0V, T
J
= 55°C
V
DS
= -55V, V
GS
= 0V, T
J
= 55°C
nA V
GS
= ± 20V
f
f
f
f
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
24
26
2.3
3.0
7.0
8.4
8.3
14
3.2
10
32
43
13
22
740
690
190
210
71
86
36
38
3.4
4.5
10
13
12
22
4.8
15
48
64
20
32
–––
–––
–––
pF
Conditions
N-Channel
I
D
= 4.5A V
DS
= 44V, V
GS
=10V
nC
P-Channel
I
D
= -3.1A V
DS
= -44V, V
GS
=-10V
ÃÃÃÃÃÃÃÃÃÃÃÃÃf
ns
N-Channel
V
DD
= 28V, ID=1.0A, RG = 6.0Ω
R
D
= 28Ω
P-Channel
V
DD
= -28V, ID=-1.0A, RG = 6.0Ω
R
D
= 28Ω
ÃÃÃÃÃÃÃÃÃÃÃÃÃf
N-Channel
VGS = 0V, V
DS
= 25V, f =1.0Mhz
P-Channel
VGS = 0V, V
DS
= -25V, f =1.0Mhz
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
–––
0.70
-0.80
60
54
120
85
2.0
-2.0
38
-27
1.2
-1.2
90
80
170
130
A
Conditions
Ã
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
ns
nC
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
N-Channel
T
J
= 25°C, I
F
= 2.0A di/dt = 100A/μs ƒ
P-Channel
T
J
= 25°C, I
F
= -2.0A di/dt = 100A/μs ƒ
e
e
ÃÃÃÃÃÃÃÃÃÃÃÃÃf
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
(See fig. 22 )
N-Channel I
SD
≤
4.7A, di/dt
≤
220A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-3.4A, di/dt
≤
-150A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
N-Channel Starting T
J
= 25°C, L = 6.5mH R
G
= 25Ω, I
AS
= 4.7A.
P-Channel Starting T
J
= 25°C, L = 20mH R
G
= 25Ω, I
AS
= -3.4A.
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
2
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©
2014 International Rectifier
Submit Datasheet Feedback
March 10, 2014
AUIRF7343Q
N-Channel
100
10
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
4.5V
6.0V
4.0V
3.5V
BOTTOM 3.0V
TOP
100
VGS
15V
12V
10V
8.0V
6.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
10
3.0V
3.0V
1
0.1
20μs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20μs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
100
100
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
10
I
SD
, Reverse Drain Current (A)
10
T
J
= 150
°
C
T
J
= 25
°
C
1
1
V DS = 25V
20μs PULSE WIDTH
3
4
5
6
0.1
0.2
V
GS
= 0 V
0.5
0.8
1.1
1.4
V
GS
, Gate-to-Source Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
3
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2014 International Rectifier
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March 10, 2014
AUIRF7343Q
N-Channel
2.0
R
DS (on)
, Drain-to-Source On Resistance
(Ω)
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 4.7A
0.120
0.100
1.5
0.080
1.0
VGS = 4.5V
0.060
0.5
VGS = 10V
0.040
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
0
10
20
30
40
I
D
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
0.12
200
E
AS
, Single Pulse Avalanche Energy (mJ)
R
DS(on)
, Drain-to-Source On Resistance
( Ω )
TOP
160
BOTTOM
ID
2.1A
3.8A
4.7A
0.10
120
0.08
80
0.06
I
D
= 4.7A
40
0.04
0
2
4
6
8
10
A
0
25
V
GS
, Gate-to-Source Voltage (V)
Starting T
J
, Junction Temperature (
°
C)
50
75
100
125
150
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
4
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2014 International Rectifier
Submit Datasheet Feedback
March 10, 2014
AUIRF7343Q
N-Channel
1200
1000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
=
4.5A
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
16
C, Capacitance (pF)
800
Ciss
12
600
8
400
Coss
200
4
Crss
0
1
10
100
0
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.01
0.1
1
10
100
0.1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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©
2014 International Rectifier
Submit Datasheet Feedback
March 10, 2014
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